臺灣博碩士論文加值系統

通信系統中，雜訊對訊號傳輸品質的影響甚重，低雜訊放大器( Low Noise Amplifier，LNA) 在無線傳輸系統中為接收端的前端電路，一定要具有高增益、低雜訊的特性，以及好的阻抗匹配，才能確保整個系統有最佳的性能，因此設計一個好的LNA對高頻接收系統來說極為重要。在發展現況方面，目前無線區域網路及行動通訊系統發展快速，傳輸資料量大幅提升，所需頻率因而升高，5GHz漸漸成為目前學術界及業界研究的主流。而要達到體積小、高性能、低成本及SOC(System On Chip)的目標，採用CMOS來設計射頻傳輸接收器(RF Transceiver)是必然的趨勢。目前不論802.11a或HiperLAN 的系統中，5.2GHz CMOS 之射頻前端電路已漸被開發，未來將陸續被整合於單一系統晶片中。
在微波電路中，微波元件的高頻表現直接影響到整體電路之性能。然而，在CMOS 技術中，由基板所造成的偶合效應，使得主被動元件在高頻操作時有不小的影響。因此，當使用CMOS製程技術來製作高頻電路，如何降低基板對於元件之負面影響進而增加整體電路的性能，是一件非常重要的課題。
在這篇論文中，主要分成兩大部分。在第一個部分中，主要研究金氧半場效電晶體在高頻時由於機版效應所造成出現的kink效應。在推導其kink理論的同時，發現此理論具有對稱性，於是由閘極-汲極寄生電阻所造成的kink效應亦被解釋。
在第二個部分中，主要是設計LNA電路。此部分的前半段，我們設計一顆簡單的5.2GHz LNA，並將電路中電感器的基板效應降低(基板磨薄)及電感器鍍金，探討對整體電路性能之影響。而在後半部分，我們以矽化鍺及CMOS技術設計了2.4/5.2GHz雙頻帶低雜訊放大器，其中以矽化鍺製作的放大器部分，由於使用電阻代替LC tank，使得佈局面積降低且有高增益之表現。

In the communication system, noise has great influence on the quality of transmission. Low noise amplifier (LNA) is the front-end amplifier of the receiver in the wireless communication system. Characteristics of high gain, low noise and good impedance match are necessary for a low noise amplifier to ensure the best performance in the whole system. Therefore, designing a good low noise amplifier is very important for a microwave transceiver system. Recently, the development of wireless local area network (LAN) is growing rapidly so that the need for data transmission rate is raising and lead to the going up of operation frequency. Consequently, no mater in the academic community or industrial circles, the research in 5GHz frequency band is the main stream. In order to achieve the goals of small chip area, high performance, low coast and SOC (System On Chip) application, designing the RF transceiver by CMOS technology is a necessary trend. Not only 802.11a but also HiperLAN system, the front-end circuits have been developed gradually and will be integrated in a single chip in the feature continually.
In the microwave circuit, the performance of a microwave device affects the whole circuit performance directly at high frequency. However, in the CMOS technology, the coupling effects through the substrate affect the active and passive devices so deeply at high frequency. Therefore, it is a very important topic for us to reduce the substrate effect to improve the performance of circuit while implementing a high frequency circuit by CMOS technology.
There are two main parts in this master thesis. In the first part this thesis, we focus on the study of the kink effect in MOSFETs due to substrate effect at high frequency. Then, we discovered that the theory of kink phenomenon due to substrate effect is symmetric with gate-grain resistance. Therefore, the kink phenomena due to small gate-drain resistance are also explained here.
In the second part, we focus on the design of LNA circuit. In the first half of this part, we design a simple 5.2GHz LNA circuit. Here, we lowered the substrate effect of the inductors by substrate thinning and used gold-plated inductors in this circuit to observe the effect due to microwave device upon the whole circuit. In the latter half of this part, we designed the 2.4/5.2 GHz dual-band LNA by SiGe 0.35m and CMOS 0.25m technology . In the SiGe design, we presented a high gain and small chip area LNA because of resistive output load instead of LC tank output load.

Contents
Chapter 1 Introduction 1
1.1 Introduction 2
1.2 Thesis Organization 2
Chapter 2 An analysis of Small-Signal Substrate Resistance
Effect in Deep Sub-micron RF MOSFETs 4
2.1 Introduction 5
2.2 Theoretical Analysis 6
2.3 Simulated Results and Discussion 11
2.4 Conclusions 29
Chapter 3 An Analysis of Small-Signal Gate-Drain Resistance Effect
on RF Power MOSFETs 32
3.1 Introduction 32
3.2 Device Structure and S11, S22 Versus Gate-Grain Resistance 34
3.3 Scattering Parameter 36
3.3.1 Expressions of Scattering Parameter S11 36
3.3.2 Expressions of Scattering Parameter S22 40
3.4 Results and Discussion 47
3.4.1 Results and Discussion for S11 47
3.4.2 Results and Discussion for S22 51
3.5 Conclusion 53
Chapter 4 A 5.2 GHz CMOS Low Noise Amplifier 55
4.1 Introduction 55
4.2 Important Concepts in RF Circuit Design 56
4.2.1 Noise Figure 56
4.2.2 S — Parameter 58
4.2.3 Input Matching 63
4.2.4 Stability 72
4.2.5 Effect of Nonlinearity 75
4.3 Circuit Description 82
4.3.1 LNA Design 87
4.3.2 Simulation Results 91
4.3.3 Circuit Layout 94
4.3.4 Measurements 95
4.3.5 Discussions and Conclusions 97
Chapter 5 2.4/5.2 GHz Dual-Band SiGe LNA and CMOS LNA 98
5.1 Introduction 98
5.2 Dual-Band SiGe LNA 100
5.2.1 Dual-Band SiGe LNA Design 100
5.2.2 Simulation Results 101
5.2.3 Circuit Layout 105
5.3 Dual-Band CMOS LNA 106
5.3.1 Dual-Band CMOS LNA Design 106
5.3.2 Simulation Results 108
5.3.3 Circuit Layout 112
Chapter 6 Conclusions 115
Reference 117
Publication List 123

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