臺灣博碩士論文加值系統

銅銦鎵硒(CIGSe)太陽能電池是目前發展的薄膜太陽能電池中非常具有吸引力及潛力的光電轉換元件，因其高光電轉換效率外，亦具備低材料消耗的特性可製備於軟性基板的優勢，有利於捲對捲(roll to roll)的生產製程能於大面積製造下降低成本。而CIGSe的高轉換效率源自於對於吸收層成分的精準調控與介面特性的控制，其中表面處理對於CIGSe效率的影響甚鉅，近年來以鹼金屬進行表面處理在效率的提升扮演了關鍵的腳色。本論文透過於CIGSSe吸收層與緩衝層中間進行鉀金屬後處理及嘗試用氫氣進行表面處理，以探討其對元件的影響。
論文中，第一部分為以鉀金屬氟化物對CIGSSe進行後處理，並探討額外的硫供給下進行氟化鉀後處理對元件性能的影響，實驗結果顯示額外供給的硫氣氛會隨著後處理的製程進入吸收層內部影響元素分佈，另一方面對CIGSe以額外提供銦硒氣氛的環境下進行氟化鉀後處理以生成鉀銦硒的化合物於吸收層表面，實驗結果顯示此元件轉換效率可從10%提升至12%。
第二部分則是在富銅的CIGSSe上於氫氣和氬氣混和氣體中進行電漿表面處理，以探討其對元件表現的影響，實驗結果顯示透過氫氣電漿處理後元件短路電流(Jsc)有上升的現象，經XPS分析後發現，在經氫氣電漿處理過後，由於氫電漿與吸收層表面反應拔除表面的硫元素，吸收層表面的硫對硒硫比會下降，造成元件表面能隙下跌，從而使CIGSSe元件的短路電流上升；而在銅空缺更多的CIGSe上進行氫處理後則成功的將元件效率從將元件從10.86%提升到11.81%

Copper indium gallium selenidesulfur (CIGSSe) solar cell is one of the promising absorber materials nowadays because of not only its high conversion efficiency but also the advantages of low-cost and roll-to-roll manufacturing porcesses on the flexible substrate. However, a high conversion efficiency of CIGSSe strongly relies on the interfacial condition between the absorber layer and the buffer layer. For this reason, the effect of surface treatment on the CIGSSe and CIGSe absorber layers is systemically studied. There are two kinds of surface treatments explored in this thesis.
The first part of the thesis is to study the effect of the potassium post deposition treatment (KF-PDT) on the CIGSSe and CIGSe with sulfur or indium/selenium during the heat treatment. Our result shows that the optimized composition of CIGSSe was deviated after KF-PDT with sulfur, thereby resulting in the degradation of the conversion efficiency. On the other hand,the conversion effcincy of CIGSe after KF-PDT with indium/selenium shows an increased conversion efficiency from 10% to 12%. Such an imprvoement can be attributed to the formation of the K-In-Se compound on the absorber surface.
In the second part, the effect of hydrogen plasma on the surface of Cu rich CIGSSe is explored. Our result shows that the hydrogen plasma can enhance the Jsc because of the redecued ratio of S/(Se+S) on the surface of CIGSSe and the lowered surface bandgap.
However, the effect of hydrogen plasma on the surface of Cu poor CIGSe is explored. The conversion effcincy of CIGSe after H2 plasma treatment shows an increased conversion efficiency from 10.86% to 11.81%.

摘要i
Abstract ii
目錄 iii
圖目錄 v
表目錄 vii
第一章 緒論 1
1-1 前言 1
1-2 光伏元件 2
第二章 文獻回顧 4
2.1太陽能元件原理 4
2.1.1 P-N工作原理 4
2.1.2 電壓-電流分析 5
2.2 銅銦鎵硒(CIGSe)結構介紹 7
2.2.1 基板 8
2.2.2 鉬電極 8
2.2.3 吸收層 9
2.2.4緩衝層 10
2.2.5 窗口層 11
2.3 CIGSe成長與製程 11
2.3.1三階段共蒸鍍 11
2.3.2合金後硒化/硫化 12
2.3.3鹼金屬後處理 13
2.3.4 KF-PDT 14
2.3.5硫化鈉PDT 17
2.3.6氫氣表面處理 18
第三章實驗設計與規劃 19
3.1 實驗架構與材料設備 19
3.2氟化鉀後處理 24
3.3分析儀器介紹 25
第四章 結果與討論 27
4.1 鉀金屬退火處理元件表現 28
4.2於供給硫氣氛下進行鉀金屬退火 29
4.3鉀銦硒退火 32
4.4氫氣電漿處理 35
第五章結論 41
參考文獻 42

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