[1] Corporation Flash Memory Group, "Technology Scaling Impact on NOR and NAND Flash Memories and Their Applications" IEEE, Page(s):697 - 700, Oct. 2006
[2] Min She, Semiconductor Flash Memory Scaling, 2003
[3] 薛富元,由模擬來探討Floating Gate Memory及SONOS元件微小化之極限,國立清華大學電子工程研究所, 碩士論文, 2004[4] Yan-Ny Tan, et al., ”Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer”, IEEE Transactions on Electron Device ,Vol.51, No.7, Page(s):1143 - 1147,JULY,2004
[5] Jan Van Houdt, et al., “High-k materials for nonvolatile memory applications”, IEEE Physics Symposium, Page(s):234 - 239, April 17-21, 2005
[6] Moon Sig Joo, et al., ”Dependence of Chemical Composition Ratio on Electrical Properties of HfO2-Al2O3 Gate Dielectric”, Jpn. J. Appl. Phys., No.3A, Pl220-l222, MARCH 2003.
[7] W. J. Zhu, et al., ”Effect of Al Inclusion in HfO2 on the Physical and electrical properties of the dielectrics”, IEEE Electron Device Letters, Vol.23, No.11, Page(s):649 - 651, 2002
[8] G. Molas et al. / Solid-State Electronics 51 (2007) 1540-1546,2007
[9] Yan Ny Tan "Hafnium Aluminum Oxide as Charge Storage and Blocking-Oxide Layers in SONOS-Type Nonvolatile Memory for High-Speed Operation" IEEE Transactions on Electron Devices, VOL. 53, NO. 4, Page(s):654 - 662 , APRIL 2006
[10] Hang-Ting Lue, et al., ”BE-SONOS A bandgap engineered SONOS with excellent performance and reliability”, IEEE International Electron Devices Meeting, Page(s):547 - 550, 5-7 Dec 2005
[11] Jiankang Bu, et al., “Retention reliability enhanced SONOS NVSM with scaled programming voltage”, IEEE Aerospace Conference paper, Vol.5, P5-2383 5-2390, 2001
[12] Marvin H. White, et al., “A low voltage SONOS nonvolatile semiconductor memory technology”, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Vol.20, No.2., Page(s):190 - 195, JUNE 1997
[13] W. J. Tsai, et al., “Data retention behavior of a SONOS type two-bit storage flash memory cell”, IEEE International Electron Devices Meeting, Page(s):32.6.1 - 32.6.4, 2001
[14] K. Tamer San, et al., “Effects of erase source bias on Flash EPROM device reliability”, IEEE Transactions on Electron Devices, Vol.42, No.1, Page(s):150 - 159, JANUARY 1995
[15] Verma, et al., ”Reliability Performance of ETOX Based Flash Memory”, International Reliability Physics Symp, P.158, 1998
[16] Haddad, et al., ”Degradation Due to Hole Trapping in Flash Memory Cells”, IEEE Electron Dev. Lett., Vol.10, No3, P.117, Mar. 1989.
[17] 林冠良”Metal Contamination effects on the electrical Characteristic of PN junction and MOS Capacitance”, 逢甲電子, 2004
[18] Ping-Hung Tsai ”Novel SONOS-Type Nonvolatile Memory Device with Suitable Band Offset in HfAlO Charge-Trapping Layer”, IEEE, 2007
[19] Ping-Hung Tsai, et al., ”Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer” IEEE Electron Device Letters,VOL.29,NO.3, Page(s):265 - 268,MARCH 2008
[20] Naoto Umezawa,et al., ” The Role of Nitrogen Incorporation in Hf-based High-k Dielectrics: Reduction in Electron Charge Traps”, IEEE Proceedings of ESSDERC, France,p201. , 2005
[21] Y.Q.Wang,et al., “Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and Si3N4/SiO2 tunneling stack” IEEE IEDM 11-13,Page(s):1 - 4, Dec. 2006
[22] Zong Liang Huo, et al., “Band Engineered Charge Trap Layer for highly Reliable MLC Flash Memory” Symposium on VLSI Technology Digest of Technical Papers 12-14, Page(s):138 - 139 June 2007
[23] Tung-Sheng Chen, et al., ”Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer” IEEE JNL Page(s):205 - 207, April 2004
[24] Gabriel Molas” Investigation of hafnium-aluminate alloys in view of integration an interpoly dielectrics of future Flash memories”, Solid-State Electronics, 2007
[25] S. Ohmi ”Rare Earth Metal Oxides for H-κ Gate Insulator” ECS,Mar.2006
[26]C. H. Wu, IEDM, 2006
[27] K. Ohmori ”Controllability of Flatband Voltage in High-k Gate Stack Structures- Remarkable Advantages of La2O3 over HfO2” IEEE, 2006