臺灣博碩士論文加值系統

本研究在於有系統的探討以溫度1150攝氏度為主，950及1050攝氏度為輔
，在時間1-96小時不等條件範圍內，選擇(1)控制氣氛及(2)控制金屬不純
物，研究矽氧化疊差之密度及長度變化．(1)控制氣氛部分，實驗重點在
控制氣氛的氧分壓，從1到10的-12次方atm(2)控制金屬部分，實驗重點在
控制金屬不純物鐵，鎳，銅不純物濃度， 範圍從50-1000ppm.

This study focus on the influence of (1) controlled oxygen
partial pressureand (2) metallic impurities for the oxdation-
induced stacking faults (OISF)length and density at high
temperture(1) In controlled amosphere, this research is based on
controlled oxidation partial pressure in reactor. The oxdation
partial pressure are oxation 1 to 10E-12 atm.(2) In controlled
materiallic impurity, three metallic impurity, ferrous,nickle
and copper, are used to study the lengthh and density of OISF
undersilicon oxidation in metallic ion concentration of 50-1000
ppm.