臺灣博碩士論文加值系統

一般沸石膜之製備方法，如水熱法、氣相轉化法、二次生長法等，皆已被廣泛使用，其製備過程簡單，但缺點是製備時間過長、膜厚不易控制等。且由於沸石膜在合成過程需加入模板分子，在完成後要以?燒程序去除，但在加以?燒的同時則容易造成膜表面龜裂。
本實驗以clear solution法製備FAU型沸石，利用已成核之沸石結晶結構，以低溫常壓電漿系統鍍膜，藉由超音波震盪器使合成沸石合成液霧化，利用氬氣將其帶入腔體內進行電漿化學反應後沉積於基材上，藉由製程參數如氣體、流量、時間等參數控制等來找尋較佳之薄膜品質後，再以FT-IR、XRD、SEM、TEM、NMR、AFM進行檢測。
從所沉積薄膜可發現，電漿製備即可沉積一連續性薄膜，且不需經由通氧步驟，單以空氣即可達到?燒之效果；另與水熱法同時經高溫爐?燒測試後相比較，其膜表面亦具有較高的耐熱性，且表面並未因溫度提升而造成崩裂等情形；甚至若以此法作為晶種層來進行二次生長法亦可輔助水熱法之長成。而在應用上，以經銀離子交換後之沸石懸浮液做電漿沉積，此一沸石薄膜亦相同具有抗菌之效果。

The common method to prepare zeolite membrane, such as hydrothermal method, vapor-phase transport, and secondary growth method had been widely used, but the disadvantage in the proceeding processes is too long time, the membrane thick also not easy to control on atmospheric pressure. In addition, the zeolite membrane must add the organic template in the synthesis process, film surface crannied easily after calcined at high temperature. Therefore, a new process can resolve these problems is meaningful.
This study focused on the preparation and their properties of FAU zeolite film deposited under plasma jet system. In the synthetic processes, firstly, uses the clear solution method to crystallization nano FAU zeolite particle, and then via low temperature atmospheric plasma jet system deposited FAU zeolite film on the silcon wafer. The suspensed zeolite solution was vaporized by ultrasonic oscillator, and into plasma reaction quartz tube by carrier gas Ar. Investigated the effects of different manufacturing parameters, such as gas flow, AC power, and processing time, on the different of surface morphology, the chemical composition and their properties by the FT-IR, XRD, SEM, TEM, NMR, AFM.
The results showed that the FAU zeolite film deposited under low temperature atmospheric plasma jet system is success, and also remove the most part of template needn’t the oxygen step through. Compare with the process by hydrothermal method, the film surface also had higher thermal resistance, and the surface didn''t cause to cranny. It also could be a seed layer to build up the hydrothermal method deposition. And on the application, after the silver ion exchange, the FAU zeolite film under plasma jet system still maintain effectively antibiotic ability.

摘要 I
ABSTRACT II
誌謝 Ⅲ
總目錄 IV
圖目錄 VII
表目錄 XI
第一章 緒論 1
1.1 前言 1
1.2 沸石 1
1.3 FAU 沸石簡介 3
1.4 沸石膜 5
1.5 沸石膜之製備 6
1.6 研究動機與目的 10
第二章 文獻回顧 12
2.1 沸石膜之成長 12
2.2 沸石膜之製備 13
2.2-1 水熱合成（Hydrothermal） 13
2.2-2 氣相轉化法(Vapor-phase Transport) 14
2.2-3 二次生長(Secondary Growth) 15
2.2-4 電漿製備 16
2.3 電漿 18
2.4 電漿基本原理及特性 19
2.5 電漿中的反應 22
2.6 化學氣相沈積（Chemical Vapor Deposition） 23
2.7 電漿輔助化學氣相沈積 24
2.8 電漿鍍膜技術應用 26
第三章 實驗步驟 28
3.1 藥品 28
3.2樣品合成 29
3.3鍍膜製程 31
3.3-1 試片製備與清洗 31
3.4離子交換 34
3.4-1 NH4+離子交換(NH4+ FORM) 34
3.5 抗菌實驗 36
3.6 使用儀器設備 37
第四章 結果與討論 46
4.1 奈米級FAU沸石特性分析 46
4.2 電漿沉積沸石薄膜性質分析 50
4.2-1合成參數之選定 50
4.2-1A 粒徑儀分析 50
4.2-1B 傅立葉轉換紅外光光譜儀（FT-IR）分析 51
4.2-1C X光繞射儀（XRD）分析 52
4.2-2 電漿參數之設定 54
4.2-2A 傅立葉轉換紅外光光譜儀（FT-IR）分析 54
4.2-2B X光繞射儀（XRD）分析 58
4.2-2C 穿透式電子顯微鏡（TEM）分析 59
4.2-2D 核磁共振儀（NMR）分析 61
4.2-2E 掃描式電子顯微鏡（SEM）分析 67
4.2-2F 原子力顯微鏡（AFM）分析 71
4.3電漿輔助水熱法沉積雙層薄膜 72
4.3A 傅立葉轉換紅外光光譜儀（FT-IR）分析 73
4.3B X光繞射儀（XRD）分析 74
4.3C 掃描式電子顯微鏡（SEM）分析 75
4.3D 原子力顯微鏡（AFM） 77
4.4 耐熱性實驗 78
4.4A 傅立葉轉換紅外光光譜儀（FT-IR）分析 78
4.4B X光繞射儀（XRD）分析 80
4.4C 掃描式電子顯微鏡（SEM）分析 82
4.4D 原子力顯微鏡（AFM）分析 86
4.5抗菌實驗 88
4.5A X光繞射儀（XRD）分析 89
第五章 結論 92
參考文獻 93

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