臺灣博碩士論文加值系統

本文旨在研究寬頻開槽耦合微帶天線之特性。首先研究開槽耦合微帶天線之基本分析理論，採用精確度較高的全波分析法作探討，研究了解整個分析的過程，其目的以作為寬頻開槽耦合微帶天線的理論分析之基礎。其次，利用低價的印刷電路FR4基板，設計一系列S頻段的開槽耦合微帶天線，從傳統的開槽耦合微帶天線、加入空氣層的寬頻開槽耦合微帶天線及寬頻開槽耦合堆疊式微帶天線，利用模擬與實作對其特性作探討，包括各參數對天線特性之影響，並實際量測獲得傳統的開槽耦合微帶天線僅有3 % 的頻寬，而加入空氣層的寬頻開槽耦合微帶天線有14 % 的頻寬且天線增益為7.7 dBi，及寬頻開槽耦合堆疊式微帶天線有33 % 的頻寬且天線增益為7.51 dBi；接著利用軟體模擬設計Ka頻段的寬頻開槽耦合微帶天線，並設計其製程符合微機電製程技術要求；最後，藉由微機電製程技術的方式，實際完成Ka頻段的寬頻開槽耦合微帶天線之製作，在阻抗良好的匹配情況下，其頻寬可達50 % 以上。

In this thesis, the characteristics of wide band aperture coupled microstrip patch antennas (MPAs) is studied. First, we conduct the basic theoretical analysis of the aperture coupled MPA. We use the full-wave numerical analysis method that has higher accuracy to understand the whole process of analysis. The purpose is to build up foundation of theoretical analysis for wide band aperture coupled MPA.
Then, we design a series of the S-band aperture coupled MPA. The cheaper and more available FR4 PCB substrate is used to layout the element of antenna. These antenna structures consist of (a) the traditional aperture coupled MPA, (b) the wide band aperture coupled MPA with a air layer, and (c) the wide band aperture coupled stacked MPA. The simulations and the experimental measurements is used to study the characteristics of these antenna structures, in terms of parameters for the variations of resonant frequencies and input impedance with antenna. The bandwidth of the traditional aperture coupled MPA is measured to be only about 3 %. The bandwidth of the wide band aperture coupled MPA with a air layer is measured to be about 14 %, and maximum antenna gain of 7.7 dBi. The bandwidth of the wide band aperture coupled stacked MPA is measured to be about 33 %, and maximum antenna gain of 7.51 dBi.
Next, we design Ka-band wide band aperture coupled MPAs based on the simulation software tool. These antenna structures consist of (a) the wide band aperture coupled MPA with an etched cavity, (b) the wide band aperture coupled stacked MPA. We design these antenna based on micromachined process.
Finally, one of the designed Ka-band wide band aperture coupled MPAs has been produced on silicon wafers by using the micromachining technique. The bandwidth (defined as having a return loss of less than —10 dB) of the micromachined wide band aperture coupled MPA is measured to be over 50 %.

目次
摘要……………………………………………………………….iii
誌謝……………………………………………………………….v
目次……………………………………………………………….vi
表目錄…………………………………………………………….viii
圖目錄…………………………………………………………….ix
第一章 緒論………………………………………………….. 1
1.1研究背景……………………………………………..1
1.2 研究動機…………………………………………….. 2
1.3 文獻回顧……………………………………………..5
1.4論文內容…………………………………………….. 8
第二章基本理論分析研究…………………………………..9
2.1簡介…………………………………………………..9
2.2分析公式…………………………………………….9
2.2.1 等效原理……………………………………..9
2.2.2 邊界條件……………………………………..13
2.2.3 動差法………………………………………..13
2.2.4 輸入阻抗……………………………………..18
2.3模擬軟體…………………………………………….19
第三章寬頻開槽耦合微帶天線之特性研究………………. 21
3.1簡介………………………………………………….21
3.2傳統開槽耦合微帶天線…………………………….22
3.2.1天線結構與特性……………………………..22
3.2.2實驗結果與討論……………………………..24
3.3加入空氣層之寬頻開槽耦合微帶天線……………39
3.3.1天線結構與特性……………………………..39
3.3.2實驗結果與討論……………………………..41
3.4寬頻開槽耦合堆疊式微帶天線……………………47
3.4.1天線結構與特性……………………………..47
3.4.2實驗結果與討論……………………………..49
第四章微機電寬頻開槽耦合微帶天線之研究……………. 64
4.1簡介…………………………………………………64
4.2加入空氣層之寬頻開槽耦合微帶天線……………65
4.2.1天線結構與特性……………………………..65
4.2.2模擬結果與討論……………………………..67
4.3寬頻開槽耦合堆疊式微帶天線……………………72
4.3.1天線結構與特性……………………………..72
4.3.2模擬結果與討論……………………………..74
4.4微機電製程技術……………………………………76
第五章製作結果與量測…………………………………….89
第六章結論 96
參考文獻 98
附錄 102
A接地介質基板格林函數 102
B微帶線與CPW線的轉換 104

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