臺灣博碩士論文加值系統

本研究中，我們模擬半導體元件中粒子的傳輸情形。在此，用蒙地卡羅(Monte Carlo)模擬方法來求解半導體元件物理中的波茲曼方程式(Boltzmann Transport Equation)。而分別討論兩種典型的蒙地卡羅模擬方法：單一粒子蒙地卡羅模擬(Single-Particle Monte Carlo Simulation)方法與自身一致蒙地卡羅模擬(Self-consistent Monte Carlo Simulation)方法，並討論其模擬的結果。

In this study, we devote ourselves to simulate the transport of
particles in semiconductor devices. The Monte Carlo (MC)
simulation is introduced to directly solve the Boltzmann Transport
Equation (BTE) in semiconductor device physics. Two typical MC
simulations, the single-particle MC simulation and the
self-consistent MC (SCMC) simulation, are considered and some
results are also presented.

1 Introduction
1.1 Motivation
1.2 Organization
2 Modelling and Background
2.1 The Boltzmann Transport Equation
2.2 Background
2.2.1 Energy Band Structure
2.2.2 Scattering Mechanisms
2.2.3 Free Flight Time
2.2.4 Electron Motion in the Momentum Space
2.2.5 Scattering Process
2.2.6 State of the Particle After the Collision
3 Single-Particle Monte Carlo Simulation
3.1 Introduction
3.2 Single-Particle Monte Carlo Procedure
3.2.1 Algorithm for Single-Particle MC Simulation
3.2.2 Flowchart for Single-Particle MC Simulation
3.3 Results and Discussion
4 Self-consistent Monte Carlo Simulation
4.1 Introduction
4.2 The Self-Consistent MC Method
4.3 Device Structure and SCMC Simulation
4.3.1 Device Structure
4.3.2 Algorithm for SCMC Simulation
4.3.3 Flowchart for SCMC Simulation
4.4 Results and Dicsussion
4.5 Parallel Monte Carlo Method
5 Conclusion
3.4

[1]Hess, K., Advanced Theory of Semiconductor Devices, Prentice-Hall, Englewood Cliffs, NJ, 1988.
[2]IEONG, MEI-KEI, A Multi-valley Hydrodynamic Transport Model for GaAs Extracted from Self-Consistent Monte Carlo Data. Master Thesis, University of MasSachusetts At Amherst, 1993.