臺灣博碩士論文加值系統

本研究探討焊料和銅基板之間電遷移缺陷的影響，針對焊料和銅基板加熱過程中進行三種變因之測試；加熱、通電加熱、通電加熱並施加的壓力。之後觀察反應介金屬之微觀結構的變化，透過四點探針測量測得的電阻率的變化，結果發現隨著加熱時間增加，100℃和200℃的介金屬化合物厚度增加，溫度效應與高電流密度會誘發空洞的生成，隨著測試時間加長而加劇。對於僅加熱處理組別中，介金屬化合物的生長機制通過晶界擴散的控制；對於施加電流和加熱組，介金屬化合物的生長機制是由體積擴散和界面反應為主；對於加熱，施加電流和施加的應力組，介金屬化合物的生長機制是由晶界擴散與晶粒生長為主。在電阻率的增加百分比線性變化，斜率隨著溫度增加而增加時，並且電阻率的變化與介金屬微觀結構的變化有密切相關。

In this study, the investigation of electromigration defects due to currents stress effects between solder and copper substrate were performed. Experiments were tested during heating,heating and applied current,heating, applied current and applied stress. We observed microstructural changes, measured resistivity changes and stress were provided by using fourpoint probe measurements. The result show that intermetallic compound thickness increases with increasing heating time both 100℃ and 200℃, effect of temperature and high current density can induce the generation of voids, this phenomenon is exacerbated with extended test time. For heattreated only samples, the intermetallic compound growth mechanism controlled by grain boundary diffusion. For applied current and heating samples, the intermetallic compound growth mechanism was dominated by volume diffusion and interface reaction. For the heating, applied current and applied stress groups, the intermetallic compound growth mechanism were dominated by grain boundary diffusion with grain growth. The percentage increase in the resistivity changes linearly, as the temperature increases the slope increases, resistivity change with the film microstructural changes are closely related.

摘要 
目錄 
表目錄 
圖目錄 
符號說明 
第一章 緒論 1
1.1 前言與研究背景介紹 1
1.2 研究動機與目的 2
1.3論文架構 3
第二章 文獻回顧 4
2.1電子產品封裝簡介 4
2.2覆晶封裝 5
2.3無鉛銲料 6
2.4 可靠度測試 8
2.4 CU/SN 界面反應與介金屬概述 9
2.4.1相圖 9
2.4.2材料介面反應 11
2.5電遷移現象 12
2.5.1電遷移研究歷史 13
2.5.2電遷移理論型式[14,30,31] 14
2.5.4電流擁擠現象: 16
2.5.5焦耳熱現象: 16
2.6薄膜沉積方式 16
2.6.1薄膜濺鍍原理(Sputtering)[33, 34]: 17
2.6.2薄膜電鍍法(Electroplate): 19
第三章 實驗相關與試件製作流程 23
3.1實驗材料與儀器 23
3.2 試件設計 24
3.2.1矽基板清洗 24
3.2.2濺鍍鉭(Ta)擴散阻擋層 24
3.2.3 銅金屬墊製程 25
3.2.4 錫銲料製程 25
第四章 實驗系統與方法 28
4.1 前言 28
4.2 四點彎矩測試法 28
4.2.1背景 28
4.2.2四點彎矩載具簡介 28
4.2.3四點彎矩法計算原理 31
4.3四點探針量測電阻 32
4.4系統整合測試及實驗設計 34
4.4.1加熱熱儲存實驗 34
4.4.2通電模擬測試 35
4.4.3加熱通電實驗 36
4.4.4加熱通電施力實驗 36
4.5金相分析 37
第五章 結果與討論 40
5.1試片於不同溫度條件下之銅錫介金屬微結構觀察 41
5.2試片於不同溫度及通電條件下之介金屬微結構觀察 51
5.3試片於不同溫度與受力及通電條件下介金屬微結構變化討論 58
5.4介金屬化合物生長機制討論 70
5.4.1測試時間效應與微結構變化總結 70
5.4.2 介金屬厚度整理與機制討論 70
5.5四點探針量測結果討論 75
第六章 結論與未來展望 79
6.1結論 79
6.2未來展望 80
參考文獻 81

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