臺灣博碩士論文加值系統

功率MOSFET具有輸入阻抗高、開關速度快、較寬的安全工作區以及較好的熱穩定性等特點，廣泛地應用於開關電源等領域。本文利用Tcad軟體分析了VDMOS的各項特性，找出關鍵結構參數的設計方法。並提出了一種新的溝槽-平面柵功率MOSFET結構(TrenchMOS)，分析模擬了新結構的各項特性。主要研究內容如下：
發現了VDMOS的各項特性。VDMOS結構中，高耐壓要求VDMOS具有低濃度、較厚的漂移區，較短的柵極長度，但是隨著漂移區厚度的增加和濃度的降低，以及閘極長度的減小，漂移區電阻和JFET區電阻會增大，導致導通電阻增大，導通狀態功耗增大。因此VDMOS的導通電阻與擊穿電壓之間形成不可調和的矛盾。
本論文提出了一種新的溝槽-平面柵TrenchMOS結構，對TrenchMOS結構特性進行了分析模擬，並與VDMOS結構進行了比較。溝槽的引入消除了飄移區間距對VDMOS擊穿電壓和導通電阻的影響，使TrenchMOS有更好的阻斷特性和導通特性。

Power MOSFET is provided with such characteristics as a high resistance, a fast switching speed, a wider safe working area and a better thermal stability, etc., being extensively applied to such fields as switch power, etc. This paper analyzes various characteristics of VDMOS by means of Tcad software, and finds out the design method of key structure parameters. In addition, it also provides a kind of new trench – plane grid power MOSFET structure (TrenchMOS) and analyzes various characteristics of the new structure. The content of the major study shall be as follows:
It studies various characteristics of VDMOS. In the VDMOS structure, the high resistance to pressure requires VDMOS to be provided with a thicker drift region with low concentration, and a shorter grid length. However, accompany the increase of the thickness of drift region, the reduction in concentration, and the decrease in gate length, the electric resistance of the drift region and JFET region would increase, leading to the increase of on-resistance and the increase of power consumption in the conduction state. Therefore, an irreconcilable contradiction would form between the on-resistance and the puncture voltage.
A kind of new trench – plane grid power TrenchMOS structure is provided, an analysis as well as simulation is engaged concerning the structure characteristics of TrenchMOS, and a comparison is conducted with the VDMOS structure. The lead-in of trench eliminates the impact of the spacing of the drift region towards the puncture voltage and the on-resistance, making the TrenchMOS to be provided with a better blocking characteristic and a conduction characteristic.

中文摘要 2
Abstract 3
誌謝 4
目錄 5
圖目錄 7
第一章 簡介 1
1.1 功率元件的應用領域 1
1.2 功率元件的分類 2
1.3 模擬軟體Tcad介紹 4
第二章 VDMOS特性模擬 6
2.1 VDMOS特性介紹 6
2.2 VDMOS DC特性模擬 7
2.3 VDMOS 開關特性模擬 11
第三章 TrenchMOS特性模擬 13
3.1 TrenchMOS特性介紹 13
3.2 電場分佈(D、W) 14
3.3 崩潰電壓(D、W) 16
3.4 電流密度(D、W) 18
3.5 電流-電壓特性(D、W) 21
3.6 開關特性(D、W) 23
第四章 TrenchMOS和VDMOS比較 25
4.1 崩潰電壓比較 25
4.2 電流-電壓特性比較 26
4.3 開關特性比較 27
第五章 結論 28
參考文獻 29

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