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COVER
CONTENTS
ABSTRACT
ACKNOWLEDGEMENTS
TABLE CAPTIONSX
FIGURE CAPTIONSX
CHAPTER 1 INTRODUCTION
1.1 History
1.2 Prospects of AlGaInP alloys
1.3 Problems in AlGaInP alloys by MOCVD
1.4 Dissertation objective
CHAPTER2 THEORETICAL CALCULATION
2.1 Distributed Bragg Reflectors (DBR) design
2.1.1 Simulation
2.1.2 DBR design
2.1.3 Chirp DBR (CDBR)
2.2 Multi-Quantum Wells (MQW) and Strain Multi-QUANTUM Wells (SMQW) design
2.2.1 Bandstructure in quantum well
2.2.2 Elastic strain and elastic constants
2.2.3 Strain effect on bandstructure
2.3 Multi-Quantum Barrier (MQB) design
2.3.1 Introduction
2.3.2MQB (UMQB) design
2.3.3 Chirped MQB(CMQB) design
CHAPTER 3 EPITAXIAL GROWTH AND DEVICE FABRICATION
3.1 MOCVD process
3.1.1 Growth mechanism
3.1.2 MOCVD system
3.2 Growth and characterization of GaxIn1-xP,A1xIn1-xP GaP
3.2.1 Growth and characterization of GaxIn1-xP
3.2.2 Growth and characterization of A1xIn1-xP
3.2.3 Growth and characterization of Ga0.5In0.5P/Alo.5lno.5P Quantum wells structure
3.2.4 Growth and characterization of GaP window layer
3.3 LED andLD structure design
3.3.1 LED and LD structure
CHAPTER 4 EXPERIMENTAL RESULTS AND DISCUESSION
4.1 Chirped GaAs/A1As DBR for 5 73nm yellow-green AlGaInP LED
4.2 MQW active layer for AlGaInP 61 Onm orange LED
4.3 Chirped AlGaInP/AlInP MQB for 5 73nm yellow-green AlGaInP LED
4.4 Strain effects for AlGaInP/GaInP LED
4.4.1 Fast resopnse 650nm LED and compressive strain LED
4.4.2 Strain induced at cladding layers
4.5 Strain effects for AlGaInP/GaInP red light LDs
4.5.1 Compressive strain Triple-QW for 670nmLD
4.5.2 Triple tensile strain barrier cladding (T-TSBC) for 640nmLD
CHAPTER5 CONCLUSIONS AND FUTURE WORKS
REFERENCES
PUBLICATION LISTS
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