臺灣博碩士論文加值系統

本論文主要研究奈米線電晶體的微縮特性之研究，透過學理分析與三維數值模擬，深入探討奈米線電晶體、鰭式電晶體與三閘極電晶體通道微縮能力，以及對抗短通道效應的能力。從量子物理模型的選擇開始，因微影製程快速進步，量子效應在近幾年備受重視，為了深入了解基本的物理意義，選用量子物理模型預測將是微縮特性研究前的準備。進一步我們與古典物理模型互相驗證，包含矽薄膜厚度與製程變異性對奈米線元件的影響，再利用三維電子切面圖驗證其正確性。選擇了考量的量子物理模型，切入電晶體微縮特性比較的主體，由奈米線電晶體、鰭式電晶體與三閘極電晶體三者在量子物理模型考量下進行通道微縮的比較，從製程角度出發分析不同矽薄膜厚度、製程變異性與通道微縮之影響。模擬結果顯示出奈米線元件除了具抵抗矽薄膜厚度的影響外，還具有製程的可塑性，更有通道微縮的潛能。並且與傳統MOSFET的設計考量進行比較，發現奈米線元件與傳統MOSFET規則不同。
以實現電路設計操作速度上的效能比較，本論文以CV/Ion作為先進元件的操作速度特性比較基礎，結果顯示鰭式電晶體在電路應用上有較快的操作速度，考量製程變異性時奈米線元件在矽薄膜特性表現比較穩定，並進一步對奈米線元件作最佳化矽薄膜厚度的設計。最後驗證在晶圓與通道方向不同使特性改變，奈米線元件在不同通道方向時能具有穩定的效能，對於積體電路而言，採用高穩定度的奈米線元件會是非常適合的選擇。

The thesis mainly focuses on the scaling capability of the nanowire transistors, and the impact of quantum effect is investigated via physical 3D numerical simulation. We analyze the channel scalability and discuss how to control the short channel effects of nanowire, FinFET and Tri-Gate transistors characteristics. Several emerging patterning processes have been proposed in recent years. Due to device size scaling, quantum mechanical effects become significant. The physical quantum mechanical model is one of key figures for 3D numerical device simulation. The quantum mechanical model is analytically studied and compared with classical model. The characteristics of electron distributions on different surface orientations subject to film thickness and manufacturability of the nanowire device are investigated via 3D numerical simulation. We comprehensively examine the three types of multiple-gate structures including nanowire, FinFET and Tri-Gate devices.
In order to evaluate the device performance when considering speed for logic application, the thesis also focuses on CV/Ion for CMOS inverter with advanced multiple-gate devices.

致謝 I
摘要 II
Abstract III
目錄 IV
圖目錄 VI
表目錄 XV
Chapter 1 序論 1
1 - 1. 前言 1
1 - 1 - 1. 多閘極元件 1
1 - 1 - 2. 短通道效應 2
1 - 1 - 3. 量子效應 2
1 - 2. 研究動機 3
1 - 3. 章節架構 3
Chapter 2 量子效應對奈米線的影響 5
2 - 1. 量子物理模型(M.L.D.A.)對奈米線的影響 5
2 - 1 - 1. 半導體方程式簡介 5
2 - 1 - 2. M.L.D.A.模型之簡介 6
2 - 1 - 3. 模擬元件結構介紹 7
2 - 1 - 4. M.L.D.A.模擬分析 7
2 - 2. 量子物理模形 ( D.G. ) 對奈米線的影響 11
2 - 2 - 1. D.G.模型之簡介 11
2 - 2 - 2. D.G.模擬分析 12
2 - 3. 無量子效應時的奈米線元件特性比較 14
2 - 3 - 1. 電氣特性比較 15
2 - 3 - 2. 不同半徑下的電子分佈比較 18
2 - 3 - 3. 製程變異性電子分佈比較 31
Chapter 3 奈米線元件與多閘極元件的微縮能力 42
3 - 1 - 1. 奈米線元件的微縮能力 42
3 - 1 - 2. 鰭式電晶體的微縮能力 46
3 - 1 - 3. 三閘極電晶體的微縮能力 50
3 - 1 - 4. 先進元件通道微縮模擬結果的比較 54
3 - 1 - 5. 奈米線元件與傳統MOSFET設計考量比較 57
Chapter 4 奈米線元件的效能比較 63
4 - 1. 多閘極元件的電容特性比較 63
4 - 2. 奈米線場效應電晶體元件的最佳化 66
4 - 3. 先進元件通道方向不同對元件影響 74
4 - 3 - 1. 研究模型建立 74
4 - 3 - 2. 模擬結果與比較 76
Chapter 5 結論 85
參考文獻 86

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