臺灣博碩士論文加值系統

本論文針對p型氮化鎵層(p-GaN)朝上、雙面粗化、具高反射鏡面矽基板之高電壓GaN 發光二極體(LED)進行研究。該元件主要是利用基板轉移技術，配合雷射剝離技術、乾/溼蝕刻技術、雙面粗化（u-GaN, p-GaN）、高反射鏡面與高熱傳導基板，將其應用於藍光LED。其中p-GaN在磊晶時，利用低溫成長方式產生的六角孔洞為粗化結構；以雷射剝離將sapphire基板移除之後，以氫氧化鈉溶液將u-GaN蝕刻成六角錐狀，再將磊晶膜轉換至結合高反射鏡面之矽基板完成元件之單顆LED，再經過製程將64顆LED進行元件內部八串八並金屬連線，得到高電壓GaN LED。
　　本論文討論四種型式之高電壓LED如下：p-GaN單面粗化、具藍寶石基板之LED (single side roughening-bare die, SR-B)；p-GaN及u-GaN雙面粗化與具矽基板之LED(double side roughening-bare die, DR-B)；將SR-B加以封裝之LED(single side roughening-packaged, SR-P)及將DR-B加以封裝之LED(double side roughening-packaged, DR-P)。在電特性方面，元件於基板的轉移過程並未使電壓產生變化，於80mA電流注入前述四種高電壓LED元件，其工作電壓分別為23.521、23.332、23.521、23.332 V。在光特性方面，當80 mA操作電流注入SR-B、DR-B、SR-P及DR-P之電光轉換效率分別為30.311 、38.500 、37.661、47.855 %；在光取出率部分，以80 mA注入SR-B、DR-B、SR-P及DR-P時，元件中單顆LED之光取出率分別為47.223、59.498、58.673、73.956 %；經由表面溫度量測，SR-B、DR-B等高電壓LED在80 mA電流注入下，其結果分別為53.1 oC 及43.7 oC。研究結果顯示，經晶圓黏貼製程後之薄膜型高電壓LED其光及熱特性均有所改善。

P-GaN side up high-voltage GaN LEDs with high reflection on silicon substrate and both p-GaN and undoped-GaN roughening layers have been investigated. The devices are subsequently fabricated with wafer-bond, laser lift-off, chemical dry/wet etching and double-side roughening techniques to transfer epilayer to silicon substrate with mirror. The roughness on p-GaN surface was fabricated via low temperature growth, and rough surface of u-GaN was made by wet-etching. Then we connected 64 cells by 8×8 chips to get high-voltage LEDs.
The forward voltage of LEDs with single side roughening-bare die(SR-B), SR-B), with double side roughening-bare die(DR-B), with single side roughening-packaged(SR-P) and with double side roughening-packaged(DR-P) was 23.521, 23.332, 23.521 and 23.332 V at 80 mA, it implied no destroy occurred on electric properties during processes. The wall plug efficiency of SR-B, DR-B, SR-P and DR-P at 80 mA current injection was 30.311, 38.500, 37.661 and 47.855 %, and light extraction efficiency of SR-B, DR-B, SR-P and DR-P cell was 47.223, 59.498, 58.673 and 73.956 % respectively. Moreover, SR-B and DR-B at 80 mA injection, the highest surface temperature was 53.1 and 43.7 oC. The optical and thermal characteristics of thin film high-voltage LEDs had been obviously improved via wafer bonding process.

誌謝 I
摘要 II
Abstract III
第一章　緒論 1
1-1 前言 1
1-2 LED之歷史及發展 1
1-3 研究背景與動機 4
1-4 論文架構 5
第二章　LED原理及文獻回顧 6
2-1 LED之發光機制 6
2-2 光度計量與單位 9
2-3 熱效應對LED之影響 11
2-4 雷射剝離技術(LLO) 12
第三章　元件製作及儀器介紹 14
3-1 前言 14
3-2 元件製作 14
3-2-1 GaN試片之磊晶結構 14
3-2-2 試片清洗 15
3-2-3透明導電層之製作 15
3-2-4平台(Mesa)蝕刻 16
3-2-5電極(Pad)製作 16
3-2-6晶圓黏貼技術(Wafer Bonding) 16
3-2-7絕緣保護層(Passivation)製作 17
3-2-8金屬連線(Interconnection) 18
3-3 元件切割、打線與封裝 19
3-4 量測儀器介紹 19
3-4-1 光電特性量測 19
3-4-2 原子力顯微鏡(AFM) 19
3-4-3 積分球 20
3-4-4 紅外線熱像分析儀(IR) 20
第四章　實驗結果與討論 22
4-1 前言 22
4-2 透明導電層熱處理溫度 22
4-3 金屬鏡面之影響 22
4-4 雷射剝離(LLO)GaN表面之特性 23
4-5 未摻雜GaN(u-GaN)磊晶層表面粗化 23
4-6 元件特性 24
4-6-1 元件形貌 24
4-6-2 電流-電壓特性 25
4-6-3 光輸出功率、電光轉換效率與光取出率 25
4-6-4 表面溫度之量測 26
4-6-5 光場圖形分析 27
4-6-6 間距對光輸出功率之影響 27
4-6-7 壽命測試 27
第五章　結論與未來展望 29
參考文獻 31

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