臺灣博碩士論文加值系統

具有良好陣列之氧化鋁奈米孔洞可由控制良好的陽極處理條件獲得。本研究使用高純度鋁塊材(99.999%)先進行電解拋光，反應條件為20 volts，在硫酸(33%)-磷酸(33%)-DI water(33%) 混合溶液中，攝氏 25 度的環境下拋光 20 分鐘，然後再放至攝氏 5 度與外加電壓為 40 volts 的 0.3M 草酸溶液中進行氧化鋁奈米孔洞的生長反應，歷時為 8 小時。其結果由SEM 觀察得知，我們所得到的奈米孔洞的直徑約為 30 奈米。本實驗的成品可獲得具陣列氧化鋁基板且厚度可以達到20μm，並可利用電鍍的技術來形成金屬奈米線。
將成長完成的奈米孔洞陣列利用降電流法減少背部障壁層後，再電鍍鎳奈米線。本研究電鍍完的鎳奈米線長度由SEM（Scanning Electron Microscopy）得知，再由BEI(Backscattering Electron Image )及EDS（Energy dispersive spectroscopy ）觀察證實其元素確實為鎳。所成長的鎳奈米線可進一步用來作為奈米磁性材料。

The pore array of anodic alumina oxide (AAO) was achieved by good anodization condition. This research used a high pure aluminum sheet (99.999%), electropolished under the conditions of 20V, 25℃, 20min in the mixed solution composed of sulfuric acid (33%) - phosphoric acid (33%) - DI water (33%). The conditions of anodization were 40V, 0.3M oxalic acid solution, 5℃, 8 hours. Observed by SEM, the diameter of AAO pores was 30 nm. Highly ordered AAO array was obtained and the thickness of AAO was 20μm. After some pore widening process, Ni nanowires were formed by electrochemistry deposition method.
The barrier layer of AAO array was reduced by lowing the anodic current, then the Ni nanowires were deposited. The length of Ni nanowires was examed by SEM, BEI, EDS. It showed that the Ni nanowires had been successfully fabricated within the nanopores. Such grown Ni nanowires could be used in the application of nano magnetic matericals.

中文摘要...............................................................I
英文摘要..............................................................II
誌謝.................................................................III
目錄..................................................................IV
圖目錄.................................................................V
表目錄..............................................................VIII
第一章 緒論............................................................1
1.1 前言.............................................................1
1.2 陽極氧化與奈米孔洞...............................................1
第二章 文獻回顧與背景介紹..............................................3
2.1 多孔氧化鋁模板之機制與參數.......................................3
2.2 一次陽極氧化與二次陽極氧化之簡介................................12
2.3 奈米線之製備簡介................................................15
2.4 電化學沈積原理..................................................17
2.5 磁性物質之特性..................................................19
2.6 分析儀器之簡介..................................................26
第三章 實驗方法.......................................................29
3.1 研究動機與方法..................................................29
3.2 實驗步驟........................................................32
第四章 結果與討論.....................................................37
4.1 多孔氧化鋁模板之結構與製程之電流時間曲線分析....................37
4.2 陽極氧化鋁形成參數之比較........................................42
4.3 利用多孔氧化鋁模板形成陣列式鎳奈米線............................52
第五章 結論與未來展望.................................................64
第六章 參考文獻.......................................................66

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