臺灣博碩士論文加值系統

本論文提出一種新式的無光罩光微影架構，藉由遠場光繞射的方式來達到微影的效果，應用此技術可以獲得次微米波長的特徵圖形，且整合無光罩技術的各項優點。可以免除製造傳統光罩的費用、縮短製程時間，快速產生光罩圖案、易於修正光罩設計、適合小量生產製造與實驗用途的多項優點。

論文中利用正型光阻(s1813)來描述在近場光微影下的震盪分佈，將近場下實驗的結果用來發展新式的遠場光微影技術。再利用連續相位式繞射元件模擬出類似近場光微影下的震盪分佈，並比較兩者的結果。

近場微影技術利用微機電製程製作晶圓母模，且搭配氣體輔助壓印技術製作出透明相位偏移光罩，可以達到相位偏移光罩般的次微米等級的線寬，且藉由近場接觸式相位偏移光罩微影技術，搭配光學顯微鏡、表面輪廓儀與原子力學顯微鏡，且利用感光阻劑與照光累積強度的高度相關性，可以研究在近場下光傳播分佈的物理行為。

研究中利用遞迴式傅立葉轉換法設計出連續相位式繞射光學元件，藉由純量理論，模擬出近場相位偏移微影實驗所到的光強度變化情形。
研究中所設計的繞射光學元件，其繞射結果在近場的光能量干涉情形與近場相位偏移微影實驗的結果呈現高度相關，有利於發展遠場繞射式光微影技術。

A new maskless optical lithography based on far-field diffractive lithography is proposed and evaluated in this thesis to achieve the sub wave-length results resolution enhancement method.
In this thesis, the near-field perturbation of light passing through a phase mask was developed on a positive photoresist (s1813). The experiment will be used to obtain insights into the perturbation. A simulated far-field perturbation generated by a continuous-phase diffractive optical element (DOE) was attempted to achieve with the near-field perturbation obtained on the photoresist.
The near-field lithography technique, used here, provides a means to achieve sub-micron features, typically accomplished by using the phase-shift mask technique with a LIGA process and gas assistant imprint process. The light intensity patterns observed using optical microscopy、surface profiler and AFM has provided detailed the near-field irradiance distribution of light intensity by using polycarbonate phase-shift mask.
Then the continuous-phase DOEs were designed by IFTA (Iterative Fourier Transform Algorithm) to simulate the light perturbation. The IFTA design principle is to modulate incident light’s phase on element plane and to arrange the light phase and intensity distribution in diffractive plane, so that the final light intensity perturbation in diffractive plane be similar to the near-field perturbation distribution. The simulated patterns showed good agreement, demonstrating the design DOEs can be applied to the far-field optical lithography to achieve sub wave length results.

英文摘要 I
中文摘要 II
目錄 III
表目錄 VI
圖目錄 VII


第一章 導 論
1.1 光微影技術 2
1.2 相位偏移微影技術 3
1.3 近場相位偏移光調變實驗 5
1.4 繞射元件與應用於遠場繞射式遠場光微影的方法 6
1.5 遠場動態光罩微影技術 7
1.6 研究架構與實驗目的 8
1.7 論文內容架構 9

第二章 文獻回顧
2.1 相位偏移光罩微影技術 10
2.2 近場相位偏移光調變研究 17
2.3 新式微影技術簡介 20
2.3.1 奈米壓印技術、軟微影技術 20
2.3.2 遠場動態光罩微影技術 22

第三章 近場相位移光調變研究
3.1 近場光相位偏移微影術的發展 26
3.2 近場相位偏移實驗設計 28
3.2.1 光阻 29
3.2.2 近場相位偏移光罩設計 30
3.3 近場相位偏移光罩之製程研究 33
3.3.1 半導體製程 34
3.3.1.1 光微影 34
3.3.1.2 蝕刻 36
3.3.1.3 矽晶母模製作流程 37
3.3.2 氣體熱壓 40
3.3.2.1 氣體熱壓原理 40
3.3.2.2 氣體熱壓製程 40
3.3.2.3 相位移光罩製作流程 42
3.3.3 量測 43
3.3.3.1 量測結果與製程討論 46
3.4 近場相位偏移實驗 50
3.5 結果與討論 52
3.5.1 正光阻近場微影之結果 52
3.5.2 近場光微影之結果 55
3.5.3 近場相位偏移光微影之實驗討論 61

第四章 繞射理論與繞射元件模擬設計
4.1 純量繞射理論 68
4.2 繞射光學模擬架構 77
4.3 近場微影模擬設計 78
4.4 繞射元件與模擬近場微影之結果 83
4.5 模擬結果與近場實驗之比較 93

第五章 結論與未來展望
5.1 結論 92
5.2 未來展望 93

Reference 94
附錄A Shipley S1800 SERIES 正型光阻 99
附錄B 細微製造技術 109
附錄C 細微複製技術 111


表 目 錄
表2.3.1 使用DUV與EUV的無光罩微影術比較表 25
表3.3.1 晶圓母模使用表面輪廓儀量測結果 47
表3.3.2 相位移光罩使用表面輪廓儀量測結果 48
表3.3.3 相位移光罩使用原子力學顯微鏡量測結果 49
表3.5.1 光學顯微鏡(x50)與表面輪廓儀量測結果 53


圖 目 錄

圖1.1.1 ICs需求線寬與微影波長圖 3
圖1.2.1 傳統光罩與相位光罩效果比較圖 4
圖1.2.2 相位移微影技術比較圖 5
圖1.3.1 近場相位移光調變實驗流程圖 6
圖2.1.1 相位偏移光罩的結構與破壞性干涉狹小暗紋圖 11
圖2.1.2 線寬能力比較圖 11
圖2.1.3 傳統光罩與相位偏移光罩在相同開口線寬的比較圖 12
圖2.1.4 應用相位偏移光罩在產生特徵圖形圖 13
圖2.1.5 佈局相位偏移光罩的時機圖 14
圖2.1.6 兩次曝光相位偏移光罩技術圖 15
圖2.1.7 相位偏移技術的誤差與缺陷產生圖 16
圖2.2.1 近場光學實驗圖 17
圖2.2.2 使用角頻譜理論與近場實驗對照圖 18
圖2.2.3 相位偏移光罩在距離影響下的線寬比較圖 19
圖2.2.4 電腦模擬電磁波平面入射相位偏移光罩圖 19
圖2.3.1 架構動態微影設備的架構圖 23
圖2.3.2 LCD搭配光學投影系統圖 24
圖2.3.3 DMD系統架構圖 25
圖3.1.1 能量波動圖 27
圖3.1.2 正光阻輻射分佈圖 27
圖3.2.1 近場微影實驗架構圖 28
圖3.2.2 汞燈光譜圖 30
圖3.2.3 二位元光學近似blazed grating理想表面輪廓圖 30
圖3.2.4 光罩幾何設計圖 32
圖3.3.1 實驗製程設計圖 34
圖3.3.2 光學顯微鏡 44
圖3.3.3 表面輪廓儀 44
圖3.3.3 原子力學顯微鏡 45
圖3.4.1 Karl Suss MA6 aligner平台架構圖 51
圖3.4.2 光路導引配置圖 51
圖3.5.1 正光阻微影於不同光累積能量下趨勢比較圖 54
圖3.5.2 近場微影位置對應圖 56
圖3.5.3 原子力學顯微鏡拍攝光柵線寬比較圖 57
圖3.5.3 原子力學顯微鏡與光學顯微鏡拍攝幾何圖形微影結果 59
圖3.5.5 光學顯微鏡量測線寬圖 60
圖3.5.4 PDMS澆注相位偏移光罩圖 65
圖3.5.5 PDMS相位偏移光罩實驗變形示意圖 65
圖3.5.6 不同相位面光強度比較圖 66
圖3.5.7 近場微影誤差比較圖 67
圖4.1.1 海更斯原理 69
圖4.1.2 Green’s 積分邊界與情形 71
圖4.1.3 Kirchhoff’s積分邊界 72
圖4.1.4 繞射傳播架構 76
圖4.2.1 近軸繞射波前轉換模擬架構 77
圖4.3.1 模擬區域示意圖 79
圖4.3.2 遞迴傅立葉演算法設計流程 82
圖4.4.1 點模擬分佈圖I 85
圖4.4.2 光柵模擬分佈圖I 86
圖4.4.3 光柵模擬分佈圖II 87
圖4.4.4 點模擬分佈圖II 88
圖4.5.1 點模擬與實驗對照圖 90
圖4.5.2 光柵模擬與實驗對照圖 91

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