跳到主要內容

臺灣博碩士論文加值系統

(216.73.216.213) 您好!臺灣時間:2025/11/10 09:46
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:陳佳吟
研究生(外文):Chen, Chiayin
論文名稱:銅銦鎵硒之合成與製作
論文名稱(外文):Synthesis and Fabrication of CuInGaSe2
指導教授:王祥辰
指導教授(外文):Wang, Hsiangchen
口試委員:闕郁倫李亞儒馮世維王祥辰
口試委員(外文):Chueh, YulunLee, YajuFeng, ShihweiWang, Hsiangchen
口試日期:100年7月22日
學位類別:碩士
校院名稱:國立中正大學
系所名稱:光機電整合工程研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:中文
論文頁數:147
中文關鍵詞:銅銦鎵硒
外文關鍵詞:CuInGaSe2
相關次數:
  • 被引用被引用:0
  • 點閱點閱:517
  • 評分評分:
  • 下載下載:8
  • 收藏至我的研究室書目清單書目收藏:0
本研究使用溶劑熱法進行銅銦鎵硒溶液之製作,其做法為將銅、銦、鎵的硝酸化合物及四氯化硒溶於乙醇中,並添加黏著劑與分散劑來調整溶液之黏度及材料混合之均勻度,使其能夠平整的塗佈於玻璃基板上。
運用此方式,我們成功的製作出銅銦鎵硒薄膜,並發現隨著退火溫度上升,其X光繞射峰值增強,且其主峰位置有微小的位移,導致其晶格常數跟著改變。另外,實驗結果顯示,添加分散劑、在大氣環境下加熱攪拌以及退火過程中通適量的氫氣可增加X光繞射峰值之強度並得到較大之晶粒。
將最佳參數進行四點探針之片電阻量測,其結果經過計算後得到電阻率為0.406 Ω-cm,與其他文獻所製作之CIGS電阻率對照後顯示本研究之薄膜具優良的導電性。

In this study, we carriered out the ink by solvothermal method. The selenide compounds and the nitrate compound of copper, indium, and gallium were dissolved in alcohol then mix them well as a precursor. Then add the appropriate bonding agent and dispersing agent for viscosity adjustment, so that it can be uniform and completely coating on the glass substrate.
By using this method, we have fabricated thin film of copper indium gallium selenide successfully. And we found that as annealing temperature increases, the intensity of X-ray diffraction peak increases and the location will be slightly shift; the lattice constant will result in be different. Experimental results show that after adding the dispersant agent in the precursor, heat stirring under atmospheric environment, and annealing in the the right amount of hydrogen gas will be available to increasing the intensity of X-ray diffraction peak and obtain larger grain size.
After the measurement of sheet resistence by four-point probe, we had calculated the resistivity of our sample and obtain the best valude is 0.406 Ω-cm. Comparing with other research, our sample has higher conductivity.

目錄
致謝 i
摘要 iii
Abstract iv
目錄 v
圖目錄 viii
表目錄 xiv
第一章 簡介 1
1- 1 前言 1
1-1-1 太陽能電池之發展背景 1
1-1-2 太陽能電池種類 2
1- 2 Ⅰ-Ⅲ-Ⅵ 太陽能電池 3
1-2-1 Ⅰ-Ⅲ-Ⅵ 太陽能電池之優勢 4
1-2-2 Ⅰ-Ⅲ-Ⅵ 太陽能電池之結構介紹 4
1- 3 CI(G)S之特性介紹 12
1-3-1 CIS之特性 12
1-3-2 CIGS之特性 13
1- 4 CIGS吸收層之製作方式 14
1-4-1 真空法 15
1-4-2 非真空法 18
1- 5 研究動機與目標 21
第二章 漿料化學合成CIGS吸收層之文獻回顧 36
2- 1 電噴灑(Electrospray) 36
2- 2 機械化學(Mechano-chemically synthesized) 38
2- 3 水熱/溶劑熱法 39
第三章 實驗設備與研究方法 62
3- 1 實驗藥品介紹 62
3- 2 實驗用儀器 63
3- 3 量測分析之儀器 64
3-3-1 X光繞射分析儀 64
3-3-2 晶格常數與結晶尺寸之計算與分析 64
3-3-3 場發射掃描式電子顯微鏡 65
3-3-4 四點探針 66
3- 4 實驗步驟 66
3-4-1 第一組 參數測試 66
3-4-2 第二組 降低溶劑、黏著劑用量 67
3-4-3 第三組 添加分散劑 68
3-4-4 第四組 添加不同分散劑劑量,並在退火時通H2 68
3-4-5 第五組 添加分散劑,並在退火時通不同H2含量 69
第四章 實驗結果與討論 78
4-1 第一組 參數測試 78
4-1-1 X光繞射分析 78
4-1-2 SEM分析 78
4-2 第二組 降低溶劑、黏著劑用量 79
4-2-1 X繞射分析 79
4-2-2 SEM分析 81
4-3 第三組 添加分散劑 82
4-3-1 X光繞射分析 82
4-3-2 SEM分析 82
4-4 第四組 添加不同分散劑劑量,並在退火時通入H2 83
4-4-1 X光繞射分析 83
4-4-2 SEM分析 84
4-5 第五組 添加分散劑,並在退火時通入不同H2含量 85
4-5-1 X光繞射分析 85
4-5-2 SEM 86
4-5-3 四點探針 88
第五章 結論 122
參考文獻 123

參考文獻
[1]翁敏航、楊茹媛、管鴻、晁成虎。太陽能電池:原理、元件、材料、製程與檢測技術。台北市:台灣東華書局股份有限公司,2010年5月。
[2]羅運俊、何梓年、王長貴。太陽能發電技術與應用。台北縣:新文京開發出版股份有限公司,2007年。
[3]陳志鋼、馬冠香、唐明華、胡俊青。CuInSe2和Cu(In,Ga)Se2薄膜的製備進展。材料導報,24(8),122-126,2010年8月。
[4]王希文、方小紅。銅銦鎵硒薄膜太陽能電池及其發展。可再生能源,26(3),13-16,2008年6月。
[5]李雯雯、王孟傑。薄膜太陽能電池技術發展潛力分析。新竹縣:工業技術研究院產業經濟與趨勢研究中心,2007年8月。
[6]ZSW,http://www.zsw-bw.de
[7]NREL,http://www.nrel.gov
[8]謝嘉民、戴寶通、沈昌宏、蕭育仁、薛丁仁、吳宗達。以共蒸鍍及濺鍍/硒化法發展高效率CIGS太陽能電池。科儀新知,32(5),13-27,2010年4月。
[9]洪天爵、賴志煌。銅銦鎵硒薄膜太陽能電池。科儀新知,32(5),38-43,2010年4月。
[10]王麗萍、洪天爵、江建志。鈉對銅銦鎵硒太陽電池之影響(上)。工業材料雜誌,292 ,88-93,2011年4月。
[11]K. H. Yoon, S. K. Kim, R. B. V. Chalapathy, J. H. Yun, J. C. Lee, and J. Song, “Characterization of a molybdenum electrode deposited by sputtering and its effect on Cu(In,Ga)Se2 solar cells,” Journal of the Korean Physical Society, 45(4) , 1114-1118 (2004).
[12]Y. Kamikawa-Shimizu, S. Shimada, M. Watanabe, A. Yamada, K. Sakurai, S. Ishizuka, H. Komaki, et al., “Effects of Mo back contact thickness on the properties of CIGS solar cells,” Physica Status Solidi A, 206(5), 1063-1066 (2009).
[13]T. Wada, N. Kohara, S. Nishiwaki, T. Negami, “Characterization of the Cu(In,Ga)Se2/Mo interface in CIGS solar cells,” Thin Solid Films, 387(1-2), 118-122 (2001).
[14]蕭育仁、謝嘉民、沈昌宏、薛丁仁、葉祐名。共蒸鍍製程技術發展銅銦鎵硒(CIGS)太陽能電池。國研科技,27,52-57,2010年7月。
[15]濱川圭弘。光電太陽電池設計與應用。台北市:五南圖書出版股份有限公司,156-174,2009年8月。
[16]T. Todorov, D. B. Mitzi, “Direct Liquid Coating of Chalcopyrite Light-Absorbing Layers for Photovoltaic Devices,” European Journal of Inorganic Chemistry, 2010(1), 17-28 (2010).
[17]P.Chelvanathan, M. I. Hossain, N. Amin, “Performance analysis of copper–indium–gallium–diselenide (CIGS) solar cells with various buffer layers by SCAPS,” Current Applied Physics, 10(3), S387-S391 (2010).
[18]C. Lei, M. Duch, I. M. Robertson, A. Rockett, “Effects of solution-grown CdS on Cu(InGa)Se2 grain boundaries,” Journal of Applied Physics, 108(11), 114908 (2010).
[19]黃惠良,蕭錫鍊,周明奇,林堅楊,江雨龍,曾百亨,李威儀,李世昌,林唯芳。太陽電池。台北市:五南圖書出版股份有限公司,271-274、281-282,2008年12月。
[20]Y. D. Chung, D. H. Cho, N. M. Park, K. S. Lee, J. Kim, “Effect of annealing on CdS/Cu(In,Ga)Se2 thin-film solar cells,” Current Applied Physics, 11(1), S65-S67 (2011).
[21]蔡智斌,簡志宇,魏士淵,賴志煌。CIGS太陽能電池-非鎘緩衝層材料及製程技術發展。科儀新知,32(5) ,5-12,2011年4月。
[22]J. H. Shi, S. M. Huang, J. B. Chu, H. B. Zhu, Z. A. Wang, X. D. Li, D. W. Zhang, Z. Sun, W. J. Cheng, F. Q. Huang, X. J. Yin, “Effect of ZnO buffer layer on AZO film properties and photovoltaic applications,” Journal of Materials Science: Materials in Electronics, 21(10), 1005-1013 (2010).
[23]N. F. Cooray, K. Kushiya, A. Fujimaki, I. Sugiyama, T. Miura, D. Okumura, M. Sato, M. Ooshita, O. Yamase, “Large area ZnO films optimized for graded band-gap Cu(InGa)Se2-based thin-film mini-modules,” Solar Energy Materials and Solar Cells, 49(1-4), 291-297 (1997).
[24]S. Ishizuka, K. Sakurai, A. Yamada, K. Matsubara, P. Fons, K. Iwata, S. Nakamura, Y. Kimura, T. Baba, H. Nakanishi, T. Kojima, S. Niki, “Fabrication of wide-gap Cu(In1-xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness,” Solar Energy Materials & Solar Cells, 87(1-4), 541-548 (2005).
[25]R.H.Mauch, J.Hedstrom, D.Lincot, M.Ruckh, J.Kessler, R.Klinger, L.Stolt, J.Vedel, H.W.Schock, “Optimization of windows in ZnO-CdS-CuInSe2 heterojunctions,” Conf. Rec. of The 22nd IEEE Photovoltaic Specialists Conf., 2, 898-902. Las Vegas, USA: IEEE (1991).
[26]C. H. Huang, H. L. Cheng, W. E. Chang, M. S. Wong, “Comprehensive Characterization of DC Sputtered AZO Films for CIGS Photovoltaics,” Journal of the Electrochemical Society, 158(5), H510-H515 (2011).
[27]M. M. Islam, S. Ishizuka, A. Yamada, K. Matsubara, S. Niki, T. Sakurai, K. Akimoto, “Thickness study of Al:ZnO film for application as a window layer in Cu(In1−xGax)Se2 thin film solar cell,” Applied Surface Science, 257(9), 4026-4030 (2011).
[28]雷永泉。新能源材料。台北縣:新文京開發出版股份有限公司,388-389,2004年11月。
[29]楊德仁。太陽能電池材料。台北市:五南圖書出版股份有限公司,471,2008年6月。
[30]S. Seike, K. Shiosaki, M. Kuramoto, H. Komaki, K.Matsubara, H. Shibata, S. Ishizuka, A. Yamada, and S. Niki, “Development of high-efficiency CIGS integrated submodules using in-line deposition technology,” Solar Energy Materials & Solar Cells, 95,254–256 (2011).
[31]潘漢昌。ITO薄膜濺鍍系統技術推廣。儀科中心簡訊,74,2006年4月。取自http://www.itrc.narl.org.tw/Publication/Newsletter/
no74/p08.php
[32]W. C. Kwak, S. H. Han, T. G. Kim, Y. M. Sung, “Electrodeposition of Cu(In,Ga)Se2 Crystals on High-Density CdS Nanowire Arrays for Photovoltaic Applications,” Crystal Growth & Design, 10(12), 5297-5301 (2010).
[33]M. Kaelin , D. Rudmann, F. Kurdesau, T. Meyer, H. Zogg, A.N. Tiwari, “CIS and CIGS layers from selenized nanoparticle precursors,” Thin Solid Films, 431-432, 58-62 (2003).
[34]徐如人,龐文琴。無機合成與製備化學。台北市:五南圖書出版股份有限公司, 2004年11月。
[35]B. Vidhya, S. Velumani, Jesus A. Arenas-Alatorre, Arturo Morales-Acevedo, R. Asomoza, J.A. Chavez-Carvayar, “Structural Studies of Mechano-chemically Synthesized CuIn1−xGaxSe2 nanoparticles,” Materials Science and Engineering: B, 174(1-3), 216-221 (2010).
[36]V. K. Kapur, A. Bansal, O. I. Asensio, P. Le and N. K. Shigeoka, “Fabrication of CIGS Solar Cells via Printing of Nanoparticle Precursor Inks,” DOE Solar Program Review Meeting 2004, 135-136. Denver, USA: U.S. Department of Energy (2004).
[37]V. K. Kapur, M. Fisher, R. Roe, “Fabrication of Light Weight Flexible CIGS Solar Cells for Space Power Applications,” Materials Research Society Symposium Proceedings, 668, 3 (2001).
[38]M. Kaelin, D. Rudmann, F. Kurdesau, H. Zogg, T. Meyer, A.N. Tiwari, “Low-cost CIGS solar cells by paste coating and selenization,” Thin Solid Films, 480-481, 486–490 (2005).
[39]Y. G. Chun, K. H. Kim, K. H. Yoon, “Synthesis of CuInGaSe2 nanoparticles by solvothermal route,” Thin Solid Films, 480-481, 46-49 (2005).
[40]J. W. Park, Y. W. Choi, E. Lee, O. S. Joo, S. Yoon, B. K. Min, “Synthesis of CIGS absorber layers via a paste coating,” Journal of Crystal Growth, 311(9), 2621-2625 (2009).
[41]P. F. Luo, P. H. Yu, R. Z. Zuo, J. Jin, Y. K. Ding, J. D. Song, Y. T. Chen, “The preparation of CuInSe2 films by solvothermal route and non-vacuum spin-coating process,” Physica B 405(16), 3294-3298 (2010).
[42]J. Olejnıcek, C. A. Kamler, A. Mirasano, A. L. Martinez-Skinner, M. A. Ingersoll, C. L. Exstrom, S. A. Darveau, J. L. Huguenin-Love, M. Diaz, N. J. Ianno, R. J. Soukup, “A non-vacuum process for preparing nanocrystalline CuIn1-xGaxSe2 materials involving an open-air solvothermal reaction,” Solar Energy Materials & Solar Cells, 94(1), 8-11 (2010).
[43]E. Lee, J. W. Cho, J. Kim, J. Yun, J. H. Kim, B. K. Min, “Synthesis of CIGS powders: Transition from binary to quaternary crystalline structure,” Journal of Alloys and Compounds, 506(2), 969-972 (2010).
[44]林麗娟。X光繞射原理及其應用。工業材料,86,100-109,1994年2月。
[45]D. Y. Lee, S. J. Park, and J. H. Kim, “Structural analysis of CIGS film prepared by chemical spray deposition,” Current Applied Physics, 11(1), S88-S92 (2011).
[46]A. L. Patterson, “The Scherrer Formula for I-Ray Particle Size Determination,” Physical Review, 56(10), 978-982 (1939).
[47]伍秀菁、汪若文、林美吟。光學元件精密製造與檢測。新竹市:財團法人國家實驗研究院儀器科技研究中心,2007年5月。
[48]M. R. Robinson, M. R. Roscheisen(Inventors), Nanosolar Inc. (Assignee). U.S. Patent No. 7604843B1 (2009/10/20).
[49]F. B. Dejene, “The structural and material properties of CuInSe2 and CuInGaSe2 prepared by selenization of stacks of metal and compound precursors by Se vapor for solar cell applications,” Solar Energy Materials & Solar Cells, 93, 577–582 (2009).
[50]I. H.Choi, D. H. Lee, “Preparation of CuInGaSe2 films by metalorganic chemical vapor deposition using three precursors,” Thin Solid Films, 515, 4778–4782 (2007).
[51]S. H. Wei, S. B. Zhang, and A. Zunger, “Effects of Ga addition to CuInSe2 on its electronic structural and defect properties,” Applied Physics Letters, 72(24), 3199-3201 (1998).
[52]D. W. Shin, R. K. Gupta, W. K. Choi, Y. S. Cho, S. J. Yoon, and Ji-Won Choi, “Dependence of Processing Parameters on Structural Properties and Microstructures of Pulsed Laser Deposited LiMn2O4 Thin Films,” Japanese Journal of Applied Physics, 48, 075501-1~6 (2009).
[53]A. Yamada, H. Miyazaki, R. Mikami,and Makoto Konagail, “Improved performance of Cu(InGa)Se2 thin film solar cells with high Ga composition using rapid thermal annealing process,” 3rd World Conference on Phorovoliaic Energy Conversion, 2859-2863. Osaka, Japan (2003).
[54]H. Miyazaki, R. Mikami, A. Yamada, and Makoto Konagai, “Cu(InGa)Se2 thin film absorber with high Ga contents and its application to the solar cells,” Journal of Physics and Chemistry of Solids, 64, 2055–2058 (2003).
[55]Y. H. Jo, B. C. Mohanty, and Yong Soo Cho, “Enhanced electrical properties of pulsed laser-deposited CuIn0.7Ga0.3Se2thin films via processing control,” Solar Energy, 84, 2213–2218 (2010)
[56]L. Zhang, Q. He, W. L. Jiang, F. F. Liu, C. J. Li, and Y. Sun, “Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films,” Solar Energy Materials & Solar Cells, 93, 114–118 (2009).
[57]M. M. Islam, T. Sakurai, S. Ishizuka, A. Yamada, H. Shibata, K. Sakurai, K. Matsubara, S. Niki, and K. Akimoto,” Effect of Se/(Ga+In) ratio on MBE grown Cu(In,Ga)Se2 thin film solar cell,” Journal of Crystal Growth, 311, 2212–2214 (2009).
[58]L. Zhang, Q. He, W. L. Jiang, C. J. Li, and Y. Sun, “Cu(In, Ga)Se2 Thin Films on Flexible Polyimide Sheet:Structural and Electrical Properties versus Composition,” Chinese Physics Letters, 26(2), 026801-1~6 (2009).

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關論文