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研究生:陳宥儒
研究生(外文):Yu-Ru Chen
論文名稱:原子層沉積氮摻雜二氧化鈦薄膜之光電化學特性研究
論文名稱(外文):Photoelectrochemical properties of nitrogen-doped titanium dioxide thin films grown by atomic layer deposition
指導教授:鄭錫恩
指導教授(外文):Hsyi-En Cheng
學位類別:碩士
校院名稱:南台科技大學
系所名稱:光電工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:58
中文關鍵詞:原子層沉積氮摻雜二氧化鈦
外文關鍵詞:ALD、N-doped TiO2
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原子層沉積氮摻雜二氧化鈦薄膜之光電化學特性研究
摘要
本研究使用原子層沉積法(Atomic Layer Deposition, ALD),於300~500℃之製程溫度,以四氯化鈦(TiCl4)、氨水(ammonia water)與氨氣(NH3)混合氣體為反應前驅物在n+-Si、Cu、Ti及Ni上成長氮摻雜二氮化鈦(TiO2-xNx)薄膜,探討沉積溫度與反應氣體流量對於成長速率、結晶結構、表面形態、薄膜成份及其光電化學特性之影響。
實驗結果顯示,薄膜之成長速率在300~400℃時不受溫度影響,在450~500℃時成長速率隨溫度提高而有下降的情形;在晶體結構方面,氮摻雜會抑制rutile相形成,氨氣與水混合比例高時,只有在Ti基板上會有rutile結晶出現,其他基材上所成長之薄膜皆為anatase結晶。薄膜表面型態方面,氨與水混合比提高,晶粒有變小的趨勢。XPS能譜圖顯示氮摻雜濃度隨製程溫度或氨與水混合比提升而增加。在光電化學特性中,Si基板上沉積的N-doped TiO2隨著沉積溫度的上升及氨氣與水混合比提高,可見光的響應有一最大值,顯示著氮摻雜濃度過低時,所能激發的載子太少;過高時,載子復合率太快,導致光響應皆有降低的情形。在Cu基板上成長的N-doped TiO2比起在Si、Ti與Ni基板上有較高的可見光響應。
Photoelectrochemical properties of nitrogen-doped titanium dioxide thin films grown by atomic layer deposition
Abstract
In this study, N-doped titanium dioxide (TiO2) films were grown on n+-Si, Ti, Ni and Cu by atomic layer deposition at 300~500℃ with TiCl4 precursor and a mixture of H2O and NH3 gases. The effects of NH3-to-H2O ratio and deposition temperature on the film properties were investigated. The surface morphology, crystal structure, and photocurrent of N-doped TiO2 films were characterized by using SEM, XRD , and Potentiostat, respectively.
The results show that the growth rate was independent of deposition temperature at temperatures between 300 and 400℃, but it decreased with the increase of deposition temperature at temperatures between 450 and 500℃. The XRD patterns demonstrated that the crystalline form was anatase for films grown on Si, Ni and Cu substrates at temperatures between 300℃ and 500℃ with a high NH3-to-H2O ratio. As lowering the NH3-to-H2O ratio, the crystalline from become a mixture of anatase and rutile for films grown at temperatures between 350℃ and 450℃. According to SEM images, the change of grain size with process temperature was insignificant. The nitrogen incorporation was confirmed by XPS. The visible-light photocurrent of as-deposited N-doped TiO2 films had a maximum with deposition temperature and NH3-to-H2O ratio. The N-doped TiO2 films grown on Cu substrates had higher visible-light photocurrent than those grown on Si, Ti, and Ni substrates.
目  錄

中文摘要…………………………………………………………………………………i
英文摘要…………………………………………………………………………………ii
誌謝………………………………………………………………………………………iii
目錄………………………………………………………………………………………iv
圖目錄……………………………………………………………………………………v
表目錄……………………………………………………………………………………viii
第一章 前言……..……………………………………………………………………1
第二章 理論及文獻回顧………………………………………………………………5
2-1 二氧化鈦的結構與性質……………………………………………………5
2-2 光觸媒之氧化還原原理 ……………………………………………………7
2-3 原子層沉積法理論基礎……………………………………………………10
2-4氮摻雜TiO2文獻回顧 ………………………………………………………13
第三章 實驗步驟………………………………………………………………………16
3-1實驗流程規劃…………………………………………………………………16
3-2 ALD- TiO2系統設計………………………………………………………17
3-3 材料準備……………………………………………………………………21
3-4薄膜量測與分析………………………………………………………………22
第四章 結果與討論……………………………………………………………………27
4-1沉積條件對ALD TiO2薄膜特性之影響……………………………………27
4-1-1沉積溫度之影響……………………………………………………27
4-1-2反應氣體流量之影響………………………………………………42
4-2基材種類對ALD N-doped TiO2特性之影響………………………………50

第五章 總結論…………………………………………………………………………55
參考文獻…………………………………………………………………………………56
參考文獻
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