臺灣博碩士論文加值系統

中文摘要

　　Power MOSFET IC廣泛應用在各種電源電路與汽車等領域，而最近的這幾年MOSFET在高速切換(switching)與低ON阻抗化有相當的進展，人們一般認為未來 MOSFET勢必會朝高性能方向發展，因此本文要介紹Power MOSFET IC的構造、電氣特性，以及今後技術發展動向。
在本論文中，主要說明Trench MOSFET的元件設計與製作；包含元件構造說明，以及應用、演進、未來的用途與發展趨勢。針對Trench MOSFET的計設製程研究部份，總共分為六道光罩製程，介紹所有每一道的光罩製程以及元件的截面結構，讓我們瞭解Trench MOSFET元件是如何經過這六個光罩的定義之後，而製作出來的。之後我們開始進行Trench MOSFET元件的測試與量測，首先要先知道元件本身的量測條件；例如量測元件的臨界電壓，要輸入多少的電流，再進過量測計算即等於閘與各電極間的電壓，最後將我們量測出來的結果進行探討與分析。
關鍵詞：Trench MOSFET、製程光罩、高速切換、阻抗。

Abstract

Power MOSFET IC has been widely applied to various fields of power circuits and automobiles. In recent years there have been considerable progresses of MOSFET in terms of high-speed switching and low ON impedance, and it has been generally believed that the future development of MOSFET will be heading towards the direction of high performance. Therefore, in this article the structure and electrical properties of Power MOSFET IC will be introduced together with the trend of future technology development.
This dissertation mainly explains the design and fabrication of Trench MOSFET device, which include device structure description, application, evolution, future purpose, and development trend. There are a total of six mask processes in the design process of Trench MOSFET, and every single mask process and the cross-sectional device structure will be introduced for better understanding of fabrication of Trench MOSFET device after being defined by these six masks. The testing and measurement of Trench MOSFET device will then be carried out. The first thing is to figure out the measurement conditions of the device itself such as the threshold voltage and the required input current. The voltage between the gate and each electrode can then be measured and calculated. In the end the measured results will be investigated and analyzed.

Keywords: Trench MOSFET, process mask, high-speed switching, impedance

目錄

中文摘要 2
Abstract 3
誌謝 4
目錄 5
表目錄 6
圖目錄 7
第一章 簡介 2
1.1 功率元件的應用領域 2
1.2 功率元件的分類 3
第二章 Power MOSFET架構 4
2.1 Power MOSFET基本介紹 4
2.2 Power MOSFET基楚元件截面示意圖介紹 6
第三章 Trench MOSFET 7
3.1 Trench MOSFET TOP View & Side View 7
3.2 Trench MOSFET六道光罩設計介紹 8
第四章 Trench MOSFET量測 13
4.1 Wafer-level & Die-level的電性量測方法 13
4.2 IV特性曲線量測結果及討論 14
4.3 閘極臨界電壓量測結果及討論 16
4.4 閘極崩潰電壓量測結果及討論 18
第五章 結論 21
參考文獻 31

表目錄

表2.1.1 MOSFET結構分類 4
表4.2.1各參數最大值與最小值的規格表 15

圖目錄

圖1.1.1功率元件的應用領域 2
圖1.2.1功率元件的分類 3
圖2.2.1側視圖Basic Process Flow of Trench NMOSFET( I ) 6
圖2.2.2側視圖Basic Process Flow of Trench NMOSFET( II ) 6
圖3.1.1 Trench MOSFET Top View 7
圖3.1.2 Trench MOSFET Side View 7
圖3.2.1俯視圖光罩1,主動區(AC) 8
圖3.2.2俯視圖光罩2, 電晶體閘極(TR) 9
圖3.2.3俯視圖光罩3, 定義電晶體閘極(1P) 10
圖3.2.4俯視圖光罩4, 金屬接觸窗(3C) 10
圖3.2.5俯視圖光罩5, 金屬連線(M1) 11
圖3.2.6俯視圖光罩6, 護層蝕刻(PV) 11
圖3.2.7 Trench MOSFET元件的截面示意圖 12
圖4.1.1 Wafer map 13
圖4.1.2 WAT main die probing 13
圖4.2.1 IV特性曲線 15
圖4.2.2 VSD量測結果 16
圖4.3.1 閘極臨界壓特性曲線 16
圖4.3.2 閘極臨界電壓量測 17
圖4.3.3閘極臨界電壓量測結果 17
圖4.4.1閘極崩潰電壓特線曲線 19
圖4.4.2閘極崩潰電壓量測 19
圖4.4.3 Trench深度曲線 20
圖4.4.4閘極崩潰電壓量測結果 20

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