臺灣博碩士論文加值系統

本實驗以電漿輔助化學氣相沉積法製備類鑽碳膜，觀察聚焦離子束在沉積碳膜後轟擊試片表面對碳膜結構與機械性質之影響。在沉積碳膜前之電漿前處理實驗方面，主要以改變電漿前處理時之氬氣及氫氣電漿功率來改變基材之表面粗糙度；在沉積過程中改變沉積時間與不同基材來沉積碳膜；在沉積碳膜後以聚焦離子束後處理實驗方面，則以改變離子束的入射能量、離子束尺寸、掃瞄次數與掃瞄角度觀察碳膜表面之形貌、粗糙度與結構之變化。
實驗結果發現氫氣電漿功率小於40W時，ITO玻璃之表面粗糙度與表面電阻率均無明顯改變，但超過50W則表面粗糙度與電阻率大幅上升，顯示ITO膜已遭受破壞。於ITO基板沉積碳膜後以離子束轟擊碳膜表面發現，在低入射能量(15kV)方面，碳膜的表面粗糙度、G band 與 ID/IG值變化不大；高入射能量(30kV) 低離子束尺寸(22nm)方面，碳膜的表面粗糙度變化不大，而ID/IG值有上升之趨勢；高入射能量(30kV) 高離子束尺寸(750nm及2000nm)方面，只有在離子束尺寸為750nm時表面粗糙度有上升之趨勢。於Si基板沉積碳膜後以離子束轟擊碳膜表面發現，在較高之離子束能量(30kV)與大離子束尺寸(750nm及2000nm)，以及掃瞄次數增加(10次)之條件下，會對碳膜結構造成明顯的改變。

Diamond-like carbon (DLC) films were deposited on both ITO glass and Si substrates by RF plasma enhanced chemical vapor deposition and the effects of post-treatment of focused ion beam (FIB) on the structure and properties of DLC films were investigated. Before the deposition of DLC films, the substrate was pre-treatment with Ar or H2 plasma at different powers. For the FIB post-treatment, the effects of incidence energy, beam size, treatment time and incidence angle were studied. Surface roughness, morphology and structure of DLC films after various treatments were measured.
Experiments of plasma pre-treatment indicate that the surface roughness and resistivity of ITO glass did not show obvious change when the power of H2 plasma was lower than 40W. However, significant increases of surface roughness and resistivity were observed when the power was larger than 40W, indicating that the ITO coating was damaged. For the FIB post- treatment of DLC deposited on ITO substrate, no obvious changes of the surface roughness, G band position and ID/IG ratio were found for the low incidence energy (15kV). However, for the high incidence energy (30kV) with a small beam size (22nm), ID/IG ratio increased but the surface roughness remained relatively constant. For the high incidence energy (30kV) with a large beam size (750nm and 2000nm), surface roughness was found to increase only at the beam size of 750nm. For the DLC deposited on Si substrate, the ID/IG ratio was found to increase after FIB post-treatment with high incidence energy (30kV), large beam size (750nm and 2000nm) and increased scan number (10 scans).

總目錄
中文摘要 I
英文摘要 II
總目錄 III
圖目錄 VI
表目錄 XII
第一章 緒論
1-1 前言 1
1-2 研究目的 2
第二章 文獻回顧
2-1 類鑽碳膜
2-1-1 類鑽碳膜之特性 3
2-1-2 類鑽碳膜之應用 4
2-1-3 沉積類鑽碳膜之技術 4
2-1-4 類讚碳膜之Raman 光譜分析 5
2-2 不同後處理技術
2-2-1 傳統機械刷磨 12
2-2-2 紫外光照射 14
2-2-3 電子槍蒸鍍 16
2-2-4 離子束轟擊 16
2-2-5 電漿後處理技術 18
2-3 離子束後處理效應 20
第三章 實驗流程與分析儀器
3-1 實驗流程
3-1-1 電漿前處理 23
3-1-2 乙炔電漿沉積碳膜 25
3-1-3 聚焦式離子束後處理 26
3-2 射頻電漿輔助化學氣相沈積系統 27
3-3 聚焦離子束系統 29
3-4 儀器介紹與量測方法
3-4-1 膜厚分析 30
3-4-2 碳膜結構分析 30
3-4-3 表面粗糙度 30
3-4-4 硬度及楊氏模數量測 31
第四章 結果與討論
4-1 電漿前處理對基材之影響
4-1-1 氫氣電漿轟擊功率對基材表面粗糙度之影響 32
4-1-2 氫氣電漿轟擊功率對基材表面電阻率之影響 32
4-1-3 氬氣電漿轟擊功率對基材表面粗糙度之影響 33
4-1-4 氬氣電漿轟擊功率對基材表面電阻率之影響 33
4-2 氫氣電漿前處理乙炔電漿沉積類鑽碳膜之影響
4-2-1 不同氫氣電漿功率前處理，低功率之乙炔電漿對碳
膜結構之影響 34
4-2-2 不同氫氣電漿功率前處理，高功率之乙炔電漿對碳
膜結構之影響 34
4-2-3 氫氣電漿功率40W前處理，乙炔電漿對碳膜結構之
影響 34
4-3 聚焦離子束後處理對類鑽碳膜之影響
4-3-1 低入射能量(15kV)之聚焦離子束後處理對類鑽碳膜
之影響 35
4-3-2 高入射能量(30kV)之聚焦離子束後處理對類鑽碳膜
之影響 36
4-3-2-1 離子束尺寸(beam size)22nm 36
4-3-2-2 離子束尺寸750nm與2000nm 37
第五章 結論 68
參考文獻 70

圖目錄
圖2-1-1 非晶質碳膜之氫鍵結組成關係圖 7
圖2-1-2 類鑽石之定義 8
圖2-1-3 沈積a-C:H之技術 9
圖2-1-4 拉曼光譜分析碳組成 10
圖2-1-5 碳鍵結之震動模式 10
圖2-1-6 影響G和D band位置的變因 11
圖2-1-7 ID/IG比的變化與相對應的G band位置及組成 11
圖2-2-1 摩擦高分子表面所供的能量使高分子主鏈因延伸而順向排列 13
圖2-2-2 以AFM觀察其機械刷磨之表面形貌3D圖 13
圖2-2-3 聚合物經過紫外光照射形成Cross-Linking 15
圖2-2-4 光配向劑形成cis-trans示意圖 15
圖2-2-5 離子束轟擊機台架構 17
圖2-2-6 電漿束配向製程示意圖 18
圖2-3-1 不同後處理技術已入射角度為450轟擊DLC與PI後，以NEXAFS
觀察其結構 21
圖2-3-2 不同入射能量後處理類鑽碳膜之表面結構變化圖 22
圖3-1-1 電漿前處理之實驗流程 24
圖3-1-2 乙炔電漿沉積碳膜之實驗流程 25
圖3-1-3 聚焦式離子束後處理之實驗流程 26
圖3-2-1 射頻電漿輔助化學氣相沈積系統 28
圖3-3-1 聚焦離子束系統之簡易圖 29
圖4-1-1 ITO玻璃基板表面於不同氫氣電漿功率處理後之表面粗糙度 42
圖4-1-2 ITO玻璃基板表面於不同氫氣電漿功率處理後的表面形貌：(a)原
始ITO玻璃，(b)40W處理後與(c)60W處理後的表面形貌 43
圖4-1-3 ITO玻璃基板表面於不同氫氣電漿功率處理後之表面電阻率 44
圖4-1-4 ITO玻璃基板表面於不同氬氣電漿功率處理後之表面粗糙度 44
圖4-1-5 ITO玻璃基板表面於不同氬氣電漿功率處理後的表面形貌：(a)原
始ITO玻璃、(b)40W處理後與(c)50W處理後的表面形貌 45
圖4-1-6 ITO玻璃基板表面於不同氬氣電漿功率處理後之表面電阻率 46
圖4-2-1 不同功率之氫氣電漿處理後，乙炔電漿功率5W沉積碳膜之拉曼
結構圖 47
圖4-2-2 不同功率之氫氣電漿處理後，乙炔電漿功率40W沉積碳膜之拉曼
數據圖:(a)G特性峰位置(b)ID/IG比值 48
圖4-2-3 以不同乙炔電漿功率於ITO基板上沉積類鑽碳膜之拉曼數據圖：
(a)G特性峰位置(b)ID/IG比值 49
圖4-3-1 以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W沉積碳
膜一分鐘，再以不同FIB掃瞄角度進行後處理之表面形貌：(a)未
經FIB掃瞄、(b)掃瞄角度0°、(c)掃瞄角度30°與(d)掃瞄角度60° 50
圖4-3-2 以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W沉積碳
膜2分鐘，再以不同FIB掃瞄角度進行後處理之表面形貌：(a)未
經FIB掃瞄、(b)掃瞄角度0°、(c)掃瞄角度30°與(d)掃瞄角度60° 51
圖4-3-3 以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W沉積碳
膜1分鐘與2分鐘，再以不同FIB掃瞄角度進行後處理之粗糙度：
(a)乙炔電漿功率40W沉積2分鐘(b)乙炔電漿功率40W沉積1分鐘 52
圖4-3-4 以氫氣電漿功率40W前處理表面後以不同之乙炔電漿功率沉積
碳膜1分鐘，再以聚焦式離子束入射能量15kV掃瞄角度為0°進
行後處理之拉曼數據圖：(a)乙炔電漿功率30W (b)乙炔電漿功率
40W(c)乙炔電漿功率50W 53
圖4-3-5 以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W沉積碳
膜2分鐘，再以FIB入射能量30kV，離子束尺寸22nm進行後處
理之表面形貌：(a)未經FIB掃瞄、(b)掃瞄角度0° 54
圖4-3-6 以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W沉積碳
膜2分鐘，再以FIB入射能量30kV，離子束尺寸22nm進行後處理之粗糙度 55
圖4-3-7 以氫氣電漿功率40W前處理表面後乙炔電漿功率30W、40W、
50W沉積碳膜1分鐘，再以聚焦式離子束入射能量30kV，離子
束尺寸22nm而掃瞄角度為0°進行後處理之拉曼數據圖：(a)乙炔
電漿功率30W (b)乙炔電漿功率40W(c)乙炔電漿功率50W 56
圖4-3-8 ITO玻璃以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜兩分鐘，再以FIB入射能量30kV，掃瞄角度0°，離子束尺寸750nm，不
同掃瞄次數進行後處理之表面形貌：(a)未經FIB掃瞄(b) 掃瞄一次(c) 掃瞄十
次 57
圖4-3-9 ITO玻璃以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜兩分鐘，再以FIB入射能量30kV，掃瞄角度0°，離子
束尺寸2000nm，不同掃瞄次數進行後處理之表面形貌：(a)未經
FIB掃瞄(b) 掃瞄一次(c) 掃瞄十次 58
圖4-3-10 Si基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜兩分鐘，再以FIB入射能量30kV，掃瞄角度0°，離子束尺寸750nm，不同
掃瞄次數進行後處理之表面形貌：(a)未經FIB
掃瞄(b) 掃瞄一次(c) 掃瞄十次 59
圖4-3-11 Si基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜兩分鐘，再以FIB入射能量30kV，掃瞄角度0°，離子
束尺寸2000nm，不同掃瞄次數進行後處理之表面形貌：(a)未經
FIB掃瞄(b) 掃瞄一次(c) 掃瞄十次 60
圖4-3-12 不同基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率
40W沉積碳膜兩分鐘，再以FIB入射能量30kV，掃瞄角度0°，
離子束尺寸，不同掃瞄次數進行後處理之表面粗糙度：(a)ITO
玻璃，(b)Si基材 61
圖4-3-13 Si基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜五分鐘，再以FIB入射能量30kV，掃瞄角度0°，離子束尺寸750nm，不同
掃瞄次數進行後處理之表面形貌：(a)未經FIB
掃瞄(b) 掃瞄一次(c) 掃瞄十次 62
圖4-3-14 Si基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜五分鐘，再以FIB入射能量30kV，掃瞄角度0°，離子束寸2000nm，不同
掃瞄次數進行後處理之表面形貌：(a)未經FIB
掃瞄(b) 掃瞄一次(c) 掃瞄十次 63
圖4-3-15 Si基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜五分鐘，再以FIB入射能量30kV，掃瞄角度30°，離子束尺寸750nm，不
同掃瞄次數進行後處理之表面形貌：(a)未經FIB
掃瞄(b) 掃瞄一次(c) 掃瞄十次 64
圖4-3-16 Si基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜五分鐘，再以FIB入射能量30kV，不同掃瞄角度，不同
離子束尺寸，不同掃瞄次數進行後處理之表面粗糙度 65
圖4-3-17 ITO玻璃基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率
40W沉積碳膜兩分鐘，再以FIB入射能量30kV，掃瞄角度0°，
離子束尺寸750nm，不同掃瞄次數進行後處理之拉曼數據圖 66
圖4-3-18 Si基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜兩分鐘，再以FIB入射能量30kV，掃瞄角度0°，離子
束尺寸750nm，不同掃瞄次數進行後處理之拉曼數據圖 66
圖4-3-19 Si基材以氫氣電漿功率40W前處理表面後以乙炔電漿功率40W
沉積碳膜五分鐘，再以FIB入射能量30kV，不同掃瞄角度，不同
離子束尺寸，不同掃瞄次數進行後處理之拉曼數據圖 67

表目錄
表2-2-1 主要配向技術之關鍵點比較分析 19

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