臺灣博碩士論文加值系統

以直流連續式濺鍍室溫成長氧化銦錫薄膜在玻璃基板上，藉由調整不同的氧含量與基板的移動速度以獲得最佳的光電特性。經由實驗結果得知，在固定其它製程參數下，氧含量在1.3%時有最低電阻率為3.6×10-4 Ω-cm，可見光範圍的550nm光穿透率達到95.8 %，因為氧空缺機制會使載子濃度增加以改善電性，但過度的氧空缺也會使得薄膜結構的缺陷增加，造成載子遷移率大幅下降使得電性變差。
另外經由不同基板移動速度的實驗結果發現，最慢的基板移動速度條件1.025 m/min，其薄膜的的載子遷移率最高;電阻率也最低為3.6×10-4 Ω-cm，可見光範圍的平均光穿透率為95.8 %，推測是因為較慢的基板移動速度使得薄膜成長時受連續式濺鍍的側向作用力較小，形成的內應力較少，薄膜缺陷較少所致。

Indium tin oxide (ITO) films were grown by in-line DC sputtering with unheated substrate. The oxygen concentration and substrate moving speed was varied during sputtering. The result indicate ITO films grown at 1.3% oxygen concentration can reach the lowest electrical resistivity 3.6×10-4 Ω-cm among these of the varied oxygen contraction test. In addition , the lowest electrical resistivity and high mobility of ITO films among test of varied substrate moving speed corresponds to low substrate moving speed. It may be related with formed during sputtering. Low substrate moving speed cause low interface stress.

總目錄
頁數
中文摘要--------------------------------------i
英文摘要--------------------------------------ii
致謝------------------------------------------iii
總目錄----------------------------------------iv
圖目錄----------------------------------------vii
表目錄----------------------------------------ix
第一章 緒論------------------------------------1
1.1 研究目的與動機-----------------------------1
1.2 相關文獻回顧-------------------------------8
第二章 理論基礎--------------------------------12
2.1 透明導電膜簡介-----------------------------12
2.1.1 透明導電膜之電性質-----------------------12
2.1.2 透明導電膜之光性質-----------------------14
2.2 ITO材料特性介紹--------------------------18
2.3 電漿原理----------------------------------19
2.4 磁控濺鍍原理-------------------------------25
2.5 薄膜成長原理 ------------------------------27
2.6 薄膜表面型態結構 ---------------------------29
2.7 觸控式螢幕---------------------------------31
第三章 實驗流程與設備----------------------------35
3.1實驗流程------------------------------------35
3.2實驗材料與基本參數---------------------------39
3.3實驗設備------------------------------------40
3.3.1 直流磁控濺鍍機----------------------------40
3.3.2 面電阻抗量測設備(四點探針)-----------------43
3.3.3 霍爾量測設備------------------------------44
3.3.4 分光光譜儀--------------------------------45
3.3.5 X-ray繞射分析----------------------------46
3.3.6 掃描式電子顯微鏡(SEM) ---------------------47
3.3.7 原子力顯微鏡(AFM)--------------------------48
第四章 實驗結果與討論-----------------------------49
4.1 氧含量對薄膜性質的影響------------------------49
4.1.1 實驗結果----------------------------------49
4.1.1.1 薄膜電性分析------------------49
4.1.1.2 薄膜光學分析-------------52
4.1.1.3 薄膜表面形貌-------------53
4.1.1.4 X ray繞射分析---------------------------56
4.1.2 討論---------------------------------------57
4.2基板傳送速度對薄膜性質的影響---------------------60
4.2.1 實驗結果-----------------------------------60
4.2.1.1 薄膜電性分析-------------------60
4.2.1.2 薄膜光學分析--------------62
4.2.1.3 薄膜表面分析--------------64
4.2.2 討論---------------------------------------68
第五章 結論---------------------------------------70
參考文獻------------------------------------------71

圖目錄
頁數
圖1.1 外掛式觸控面板結構示意圖------------------2
圖1.2 OGS觸控面板結構示意圖--------------------2
圖1.3 On Cell觸控面板結構示意圖----------------3
圖1.4 In Cell觸控面板結構示意圖----------------3
圖2.1典型TCO的穿透、反射與吸收光----------------14
圖2.2 BM效應示意圖----------------------------16
圖2.3 氧化銦立方晶系結構-----------------------18
圖2.4 電漿產生的主要硬體設計-------------------19
圖2.5 電漿在不同I-V操作區間的放電情形-----------23
圖2.6 電漿操作在正常放電區時的發光情------------24
圖2.7 磁控濺鍍示意圖--------------------------26
圖2.8 薄膜成長示意圖--------------------------28
圖2.9 Thornton提出氣壓與溫度的濺鍍結構模型------30
圖2.10外掛式Touch Sensor製造示意圖-------------32
圖2.11 On-Cell Touch Sensor製造示意圖---------33
圖2.12 In-Cell Touch Sensor製造示意圖---------34
圖3.1接觸角量測示意圖--------------------------35
圖3.2 實驗流程圖------------------------------38
圖3.3 連續式直流磁控濺鍍機---------------------42
圖3.4 濺鍍機架構圖----------------------------42
圖3.5 四點探針量測示意圖-----------------------43
圖3.6 霍爾電性量測示意圖-----------------------44
圖3.7分光光譜儀-------------------------------45
圖3.8 布拉格繞射原理---------------------------46
圖3.9 原子力顯微鏡示意圖-----------------------48
圖4.1 不同氧含量與表面阻抗關係圖----------------49
圖4.2 不同氧含量的霍爾量測---------------------50
圖4.3 不同氧含量的電阻率-----------------------51
圖4.4 不同氧含量的光穿透率量測------------------52
圖4.5 室溫濺鍍下不同氧含量的ITO SEM表面分析------55
圖4.6 不同氧含量下的XRD繞射分析-----------------56
圖4.7 不同基板動速度的霍爾量測------------------60
圖4.8 不同基板動速度的電阻率--------------------61
圖4.9 不同基板動速度的穿透率量測-----------------63
圖4.10不同基板移動速度沉積的表面粗造度關係圖-------64
圖4.11室溫濺鍍下不同基板移動速度的ITO AFM表面分析--67

表目錄
頁數
表3.1氧含量實驗條件-----------------------------36
表3.2實驗基本參數設定---------------------------37
表4.1不同氧含量的平均光穿透率--------------------52
表4.2不同基板移動速度的平均光穿透率---------------62

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