臺灣博碩士論文加值系統

本論文研製一個2GHz的金氧半壓控震盪器，其架構為雙交叉耦合對 (cross-coupled pair)，採用內在共振調諧電路，具有nMOS 和pMOS 以提高負電導，輸出為差動信號。閘極電阻的效應及可變電容的特性均詳加討論。應用於放大器和混波器的驗證，有考量閘極電阻之下，增益會降低，動態範圍會變大，實驗與模擬結果非常吻合。再將此結果應用於震盪器的設計上以確保達到起振臨界條件。模擬結果如下：震盪頻率為2.078GHz~2.152GHz，單端電壓輸出為10mW，在600kHz相位雜訊為—102dBc/Hz和3V的電源供應。此壓控震盪器將可廣泛應用於無線通信系統中。

The fabrication of the VCO via 0.5um CMOS technology is designed for 2GHz wireless application. The architecture is the complementary nMOS and pMOS cross-coupled pair to enhance the negative conductance with internal resonator. The output signals are differential. The gate resistance is especially emphasized to assure the stationary of oscillation. The varactor from nMOS is also discussed. In the application of LNA and Mixer, with gate effect the dynamic range is increased due to conversion gain be reduced. The measurement and simulation have good match. The result is applied to VCO design in order to achieve the stationary of oscillation. The simulated results with output frequency 2.078~2.152GHz, single output power 10mW, and phase noise —102dBc at 600kHz offset are obtained. The power supply is 3V. It can be used as a local oscillator in a wide variety of wireless system.

Contents
CHINESE ABSTRACTi
ENGLISH ABSTRACTii
ACKNOWLEDGEMENTSiii
CONTENTSiv
TABLE CAPTIONSvi
FIGURE CAPTIONSvii
Chapter 11
Introduction1
1.1 Background1
1.2 Direct Conversion Receiver Architecture2
1.3 Organization of the thesis3
Chapter 29
High Frequency Characteristic of nMOS and varactor9
2.1 High Frequency Characteristic of nMOS9
2.1.1 Calculation of Gate Impedance9
2.1.2 Multi-finger MOSFET Gate Impedance12
2.1.3 Single-contacted and Double-contacted Comparison12
2.1.4 Impacts of Gate Resistance on rf Behavior13
2.1.5 Measurement and Analysis13
2.2 Performance of CMOS varactor15
2.2.1 Varactor Structures available in CMOS15
2.2.2 P+ to N-well junction Varactor15
2.2.3 Standard mode NMOS Varactor15
2.2.4 Accumulation mode NMOS Varactor16
2.2.5 Standard mode PMOS Varactor16
2.3 Layout16
2.3.1 Single-ended vs. differential Connection in Varactors16
2.4 Measurement Result17
Chapter 334
Analysis and Design of CMOS Cross-coupled VCO
3.1 Design Consideration34
3.2 Circuit Description35
3.3 Simulation35
3.4 Phase noise calculation36
3.5 Simulation Results37
Chapter 444
Conclusion and Future Prospect
4.1 Conclusion44
Appendix A45
Phase Noise
A.1 The equivalent noise resistance45
A.2 Oscillator Model45
A.3.1 Single sideband phase noise spectrum46
A.3.2 Device noise excess factor (simply noise factor)47
A.4 Figure of Merit (FOM)48
References51

References
[1] T. S. Rappaport. Wireless Communication. Prenice Hall, ISBN 0-13-375536-3, 1996.
[2] Rao, Y.S., “Spectrum allocation in 2 GHz band with easy transition to IMT-2000 (3G) mobile services in India ,” IEEE International Conference on Personal Wireless Communication, pp. 289 —295, 1999.
[3] A. A. Abidi, “Low-power radio-frequency ICs for portable communication”, Proceedings of the IEEE, vol.83, pp. 544-69, April 1995.
[4] Soyuer, M.; Burghartz, J.N.; Jenkins, K.A.; Ponnapalli, S.; Ewen, J.F.; Pence, W.E., “Multilevel monolithic inductors in silicon technology,” Electronics Letters, vol. 31 no. 5, pp. 359 -360, 2 March 1995.
[5] A. W. Buchwald and K. W. Martin, "High-speed voltage-contolled oscillator with quadrature outputs," Electron. Lerr., vol. 27, pp. 309-310, 1991.
[6] Rofougaran, A.; Rael, J.; Rofougaran, M.; Abidi, A., “A 900 MHz CMOS LC-oscillator with quadrature outputs,” Solid-State Circuits Conference, pp. 392 -393, 1996.
[7] Ahrens, T.I.; Lee, T.H., “A 1.4-GHz 3-mW CMOS LC low phase noise VCO using tapped bond wire inductances,” Low Power Electronics and Design Proceedings. International Symposium on , pp. 16 —19, 1998.
[8] Dauphinee, L.; Copeland, M.; Schvan, P., “A balanced 1.5 GHz voltage controlled oscillator with an integrated LC resonator,” IEEE Solid-State Circuits Conference, pp. 390 -391, vol. 491, 1997.
[9] Craninckx, J.; Steyaert, M., “A CMOS 1.8 GHz low-phase-noisevoltage-controlled oscillator with prescaler,” IEEE Solid-State Circuits Conference, pp. 266 -267, vol. 377, 1995.
[10] Craninckx, J.; Steyaert, M., “Low-noise voltage-controlled oscillators using enhanced LC-tanks,” Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on vol. 4212 , pp. 794 —804, Dec. 1995.
[11] Hung, C.-M.; O, K.K., “A 1.24-GHz monolithic CMOS VCO with phase noise of -137dBc/Hz at a 3-MHz offset,” IEEE Microwave and Guided Wave Letters vol. 93 , , pp. 111 —113, March 1999
[12] Pfaff, D.; Qiuting Huang, “A quarter-micron CMOS, 1GHz VCO/prescaler-set for very low power applications,” Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999 , pp. 649 —652, 1999.
[13] Svelto, F.; Deantoni, S.; CasteIIo, R., “A 1.3GHz CMOS VCO with 28% frequency tuning,” Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999 , pp. 645 —648, 1999.
[14] Tsung-Hsien Lin; Sanchez, H.; Rofougaran, R.; Kaiser, W.J., “CMOS front end components for micropower RF wireless systems,” Low Power Electronics and Design, 1998. Proceedings. 1998 International Symposium on, pp. 11-15, 1998.
[15] Wakimoto, T.; Konaka, S., ”A 1.9-GHz Si bipolar quadrature VCO with fully-integrated LC tank,” VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on , pp. 30 —31, 1998.
[16] Zannoth, M.; Kolb, B.; Fenk, J.; Weigel, R. “A fully integrated VCO at 2 GHz,” IEEE Journal of Solid-State Circuits, vol. 33 12 , pp. 1987 —1991, Dec. 1998.
[17] Byeong-Ha Park; Allen, P.E., “Low-power, low-phase-noise CMOS voltage-controlled-oscillator with integrated LC resonator,” Circuits and Systems, 1998. ISCAS ''98. Proceedings of the 1998 IEEE International Symposium on vol. 4 , pp. 421 —424, 1998.
[18] Young, D.J.; Boser, B.E, “A micromachine-based RF low-noise voltage-controlled oscillator,” Custom Integrated Circuits Conference, Proceedings of the IEEE 1997 , pp. 431 —434, 1997.
[19] N. M. Nguyen and R. G. Meyer, “ A 1.8-GHz Monolithic LC Voltage-Controlled Oscillator,” IEEE Journal of Solid-State Circuits, vol. 27, pp. 444-450, May 1997.
[20] Yi-bin Hsieh, “ The Design and Analysis of A 2.4GHz CMOS Low Noise Amplifier”
[21] Tser-Yu Lin, “ The Design and Analysis of A 2.4GHz CMOS Mixer”
[22] Jia-Jiunn Ou; Xiaodong Jin; Ma, I.; Chenming Hu; Gray, P.R.,” CMOS RF modeling for GHz communication IC''s,” Symposium on VLSI Technology Digest of Technical Papers, pp. 94 —95, 1998.
[23] Razavi, B.; Ran-Hong Yan; Lee, K.F., ”Impact of distributed gate resistance on the performance of MOS devices,” Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on vol. 4111, pp. 750 —754, Nov. 1994.
[24] Suet Fong Tin; Osman, A.A.; Mayaram, K.,”Comments on "A small-signal MOSFET model for radio frequency IC applications,” IEEE Transactions Computer-Aided Design of Integrated Circuits and Systems, vol. 174, pp. 372 —374 , April 1998.
[25] R. P. Jindal, “Noise associated with distributed resistance of MOSFET gate structure in integrated circuits,” IEEE Trans. Electron Devices, vol ED-31, pp. 1505-1509, Oct. 1984.
[26] D. M. Pozar. Microwave Engineering. Addison-Wesley, ISBN 0-201-50418-9, 1990.
[27] D. B. Lesson, “ A simple model for feedback oscillator noise spectrum,” Proc. IEEE, pp. 329-330, Feb. 1966.