臺灣博碩士論文加值系統

本研究以磁過濾模式陰極真空電弧法製備Al0.5CoCrCu1.5FeNi高熵合金薄膜，探討不同製程參數對於薄膜結構、成份以及機械性質的影響。此外，也探討不同製程條件對於膜中大顆粒密度的影響，並對大顆粒在磁過濾管中的行進機制進行討論。
實驗結果發現，隨著過濾管磁場增加，鍍膜速率明顯得到提升，薄膜中的氮含量亦上升，歸因於磁場增加有助於電漿離子濃度及能量的提升；在增加氮氣流率下，鍍膜速率有先升後降的趨勢，歸因於初期靶材的毒化不明顯，氮含量亦增加，在RN = 20%時僅趨於飽和值25 at.%，是因為只有Al、Cr與氮強鍵結，薄膜由FCC結構轉為非晶，則因為小原子氮的增加促進非晶化。在增加基板偏壓中，鍍膜速率有先升後降的趨勢，是因為電漿離子有更強的吸引力及更強再濺射效應的消長，薄膜由非晶逐漸轉為FCC結構，是因為偏壓下原子的移動率增加，由於偏壓使緻密度提升，殘留壓應力與硬度也得到提升，偏壓在-150 V呈最大硬度值12 GPa。在減少工作壓力下，因與氣體分子的碰撞減少，鍍膜速率有上升趨勢，而薄膜由單一FCC結構轉變為兩個FCC結構，富Cu及缺Cu相。
在不同製程條件下探討薄膜中大顆粒密度的影響，發現使用銅箔擋板或不鏽鋼網貼覆管壁皆無法降低顆粒密度，而在使用鋁箔紙縮減過濾管截面積時，可以明顯降低顆粒密度，使薄膜表面平整性得到改善。
由於未施加磁場，基板不產生鍍膜及大顆粒，而施加磁場，可增加電漿濃度，進而增加膜厚及大顆粒密度，又大顆粒密度分佈與電漿濃度分佈類似，因此顆粒在磁過濾管中主要採電漿乘載方式，因電漿離子的碰撞提供顆粒行進的動量，使顆粒隨著電漿到達過濾管出口並共沈積於基板上。

第一章、 前言 1
第二章、 文獻回顧 3
2.1 表面鍍層 3
2.2 高熵合金薄膜之研究 6
2.2.1 高熵合金簡介 6
2.2.2 高熵合金氮化物薄膜發展 6
2.3 陰極真空電弧電漿鍍膜法 (Cathodic vacuum arc plasma deposition) 14
2.3.1 金屬電漿的產生 (Metal plasma production) 14
2.3.2 真空電弧電漿的產生方式 14
2.3.3 大顆粒顆粒的產生 18
2.3.4 電弧電流供應 20
2.3.5 大顆粒過濾模式 20
2.4 本論文研究目的 23
第三章、 實驗步驟 24
3.1 實驗設計 24
3.2 靶材製備與基板選擇 26
3.2.1. 靶材合金組成 26
3.2.2. 靶材製備 28
3.2.3. 鍍膜基板 29
3.2.4. 鍍膜參數 29
3.3 陰極真空電弧鍍膜機 37
3.4 薄膜性質分析與量測 38
3.4.1 薄膜成份及結構分析 38
3.4.2 薄膜機械性質 41
第四章、 結果與討論 44
4.1. 不同過濾管磁場對薄膜的影響 44
4.1.1 鍍膜速率 44
4.1.2 成份分析與晶體結構 46
4.1.3 表面形貌及表面粗糙度 48
4.1.4 硬度與殘留應力量測 50
4.2. 不同氮氣流率對薄膜的影響 52
4.2.1 鍍膜速率 52
4.2.2 成份分析與晶體結構 54
4.2.3 硬度與殘留應力 57
4.3. 不同基板偏壓對薄膜的影響 59
4.3.1 鍍膜速率 59
4.3.2 成份分析及晶體結構 61
4.3.3 表面形貌及表面粗糙度 63
4.3.4 硬度與殘留應力 66
4.4. 不同工作壓力對薄膜的影響 68
4.4.1 鍍膜速率 68
4.4.2 成份分析與晶體結構 70
4.4.3 表面形貌及表面粗糙度 72
4.4.4 硬度及殘留應力 74
4.5. 不同製程條件對大顆粒密度影響 76
4.5.1 不同過濾管磁場對大顆粒密度之影響 76
4.5.2 不同工作壓力對大顆粒密度之影響 79
4.5.3 不同過濾管結構對大顆粒密度之影響 82
4.5.4 縮小過濾管截面積對大顆粒密度之影響 88
4.5.5 過濾管出口處之電漿與大顆粒分佈 92
4.6. 大顆粒行進機制綜合討論 98
4.6.1 大顆粒行進機制 98
4.6.2 大顆粒行進機制綜合討論 102
第五章、 結論 113
第六章、 本研究貢獻 115
第七章、 建議未來研究方向 116
第八章、 參考文獻 117

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