臺灣博碩士論文加值系統

本研究使用超高頻電漿化學氣相沉積系統來製備微晶矽薄膜，同時利用放射光譜儀來觀測電漿中成分的變化，並將放射光譜儀的量測結果和薄膜的結構特性做比較。並藉由調整電漿功率、反應總壓、上下電極間距、氫氣稀釋比，期望能得到電漿狀態和成長參數的關係。實驗結果發現，放射光譜儀量的量測結果和薄膜的成長速率、結晶比例具有相同的變化趨勢。因此在沉積微晶矽或串連式太陽能電池時，可藉由放射光譜儀直接量測的結果，即時調整實驗參數來得到最適化的沉積條件。

In this thesis, the hydrogenated microcrystalline silicon (μc-Si:H) intrinsic layer was deposited by very-high-frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD). The influence of deposition conditions on VHF plasma were characterized by in-situ optical emission spectroscopy (OES). The effect of varied power density, reaction pressure, distance between parallel electrodes and diluted ratio of hydrogen gases were also investigated. A close relationship between OES intensity and thin film structure was found. Therefore, the optimal deposition conditions can be established by OES.

摘　要 I
Abstract II
致　謝 III
目　錄 IV
圖 索 引 VII
表 索 引 XI
第一章、緒論 1
1.1前言 1
1.2 微晶矽的組成及優點 3
1.3微晶矽薄膜的製備方法 6
1.4 電漿反應 10
1.4.1 電漿反應基本原理 10
1.4.2 SiH4/H2在電漿中之反應機制 12
1.5 非晶矽和微晶矽的成長機制 15
1.5.1 非晶矽的成長機制 15
1.5.2 微晶矽的成長機制 16
1.6 研究方針與策略 19
第二章、實驗相關部分 20
2.1. 實驗氣體與藥品 20
2.2 實驗裝置及方法 22
2.3 分析儀器 24
第三章、實驗結果與討論 35
3.1 不同電漿功率密度對微晶矽長膜的效應 35
3.1.1 不同電漿功率密度對微晶矽長膜的結構影響 35
3.1.2 不同電漿功率密度下的電漿光譜和微晶矽薄膜成長的關聯 39
3.2 不同反應總壓對微晶矽長膜的效應 43
3.2.1 不同反應總壓對微晶矽薄膜的結構影響 43
3.2.2 不同反應總壓下電漿光譜和微晶矽薄膜的關聯 47
3.3 不同上下電極間距對微晶矽長膜的效應 51
3.3.1 不同上下電極間距對微晶矽長膜的結構影響 51
3.3.2 不同上下電極間距時的電漿OES放射光譜儀 55
3.4 不同氫氣稀釋比對微晶矽長膜的效應 59
3.4.1 不同氫氣稀釋比對微晶矽長膜的結構影響 59
3.4.2 不同氫氣稀釋比時的電漿OES放射光譜 63
第四章、結論 67
參考文獻 68
附 錄 71
A. SEM觀測到的微晶矽薄膜剖面圖 71
B. Nakano使用數學模擬的方式研究研究了電極間距對電子溫度和密度的影響[39] 72
C. Maemura使用朗格爾探針(Langmuir Probe)研究了電極間距對電子溫度和密度的影響 [40] 72
D. Mashima使用朗格爾探針(Langmuir Probe)量測電子溫度和氫氣稀釋比的關係 [45] 73

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