臺灣博碩士論文加值系統

傳統銅銦鎵硒(CIGS)薄膜在其硒化製程中所使用之硒化氫具有高毒性且價格昂貴，本實驗改以加熱硒粉末產生硒蒸氣的方式進行硒化，利用自行開發之射頻電漿輔助硒化系統，使硒蒸氣分解成更小的氣體分子，冀望可提升硒蒸氣與銅銦鎵金屬前驅層的反應效果而加深硒化深度，最後達到單相均勻的CIGS吸收層。
首先利用射頻磁控濺鍍法在玻璃基材上沉積銅銦鎵金屬前驅層，銅銦鎵靶材元素比例分別為1:0.5:0.5與1:0.7:0.3，再以射頻電漿輔助硒化處理系統進行硒化製程。本實驗改變製程壓力、電漿功率、退火時間與退火溫度，並由XRD觀察硒化後CIGS薄膜之結構與結晶優選方向、SEM觀察薄膜表面形貌與斷面結構、EDS分析元素成分比例、ESCA觀察銅銦鎵硒薄膜縱深成分之變化。
在本研究最後的結果發現，在氧元素含量較低的CIG前驅層薄膜，以電漿功率40 W、退火溫度550°C、硒粉溫度250°C與退火時間30分鐘的最佳化電漿硒化參數下，可得到一個大晶粒尺寸、表面平整度高並完全硒化之薄膜。

The aim of this experiment is to investigate the selenization treatment in CIGS thin films by Radio Frequency Plasma Enhanced Selenization Treatment whith the parameters including the pressure, power, annealing time and annealing temperature. In this study, the films are characterized by using scanning electron microscopy, X-ray diffraction, energy dispersive spectrometer, X-ray photoelectron spectroscopy and hall effect.
In traditional way, the H2Se is generally used in selenization treatment, but it has a highly cost issue. To solve the problem, we using the self-developed system. The Se powder were heated by heater and the caused vapor were guide into the chamber to react the selenization process. To prepare the high quality CIGS thin-film to upgrade reaction efficient of CIG precursor layer.
Finally, the CIG precursor film with lower oxygen content can obtain larger grains, smooth surface morphology and completely selenized CIGS film at plasma power of 40 W, annealing temperature of 550°C, Se powder temperature of 250°C, and annealing time of 30 min.

中文摘要.................................I
英文摘要................................II
致謝..................................III
目錄...................................IV
表目錄.................................VII
圖目錄................................VIII

第一章 緒論
1.1能源危機..............................1
1.2太陽能電池分類.........................2
1.3薄膜太陽能電池介紹......................4
1.3.1 非晶矽薄膜太陽能電池概述..............4
1.3.2 碲化鎘薄膜太陽能電池概述..............5
1.3.3 硒化銅銦鎵薄膜太陽能電池概述...........7
1.4研究動機與目的.........................8
第二章 基礎理論與文獻回顧
2.1 CIGS薄膜太陽能電池基本原理.............10
2.2 CIGS薄膜太陽能電池....................13
2.2.1 發展歷史...........................14
2.2.2典型結構............................17
2.3 CIGS薄膜特性.........................20
第三章 實驗流程與規畫
3.1實驗流程..............................24
3.2 實驗規劃.............................25
3.2.1 實驗參數設計 .......................25
3.2.2 試片準備...........................28
3.2.3 製備銅銦鎵三元金屬前驅層..............29
3.2.4 製備銅銦鎵硒薄膜....................29
3.3 實驗儀器.............................30
3.3.1 單源射頻磁控濺鍍系統.................30
3.3.2 連續式多腔體濺鍍系統.................32
3.3.3 射頻電漿輔助硒化處理退火系統...........34
3.4 分析量測儀器..........................36
3.4.1場發射掃描式電子顯微鏡.................36
3.4.2 X光繞射儀.........................38
3.4.3 化學分析電子能譜儀...................40
3.4.4歐傑電子能譜儀.......................42
3.4.5霍爾效應量測儀.......................43
3.4.6 紫外光/可見光吸收光譜儀...............43
第四章 結果與討論
4.1 CIG前驅層比例1.0:0.5:0.5之硒化處理.....45
4.1.1電漿功率對CIGS薄膜的影響..............45
4.1.1.1材料結構分析.......................45
4.1.2退火時間對CIGS薄膜的影響..............49
4.1.2.1材料結構分析.......................50
4.2 CIG前驅層比例1.0:0.7:0.3之硒化處理.....54
4.2.1 電漿功率對CIGS薄膜的影響.............56
4.2.1.1 材料結構分析......................57
4.2.2 硒粉溫度對CIGS薄膜的影響.............61
4.2.2.1 材料結構分析......................61
4.2.3 退火溫度對CIGS薄膜的影響.............66
4.2.3.1 材料結構分析......................66
4.2.3.2 薄膜特性分析......................71
第五章 結論
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