臺灣博碩士論文加值系統

本實驗規劃在矽基板上利用共濺鍍 (co-sputtering ) 沉積7 nm絕緣層鉿鋯四氧 (HfZrO4) ，再藉由濺鍍 (sputtering) 以及高功率磁控濺鍍(HIPIMS) 沉積一層1.5 nm的金屬帽層 (Capping layer) 後再沉積金屬層鈦 (Ti) ，接著再對試片分別做550 °C 、700 °C、 850 °C 的快速熱退火 (RTA) ，再濺鍍鋁 (Al) 為電極，做成的閘極電極。接著再利用電流-電壓 (I-V) 、電容-電壓 (C-V) 、低溫量測、化學分析墊子能譜儀 (XPS) 、穿透式電子顯微鏡 (TEM) 、X光繞射分析 (XRD) 等，分析帽層使用不同沉積方式所製成的電容器的電性和物性。
研究結果顯示出，以HIPIMS試鍍ZrN墊層（1.5 nm）於ZrO2為主的高介電常數薄膜上，發現比傳統PVD在MIS結構上具有較小的CV遲滯曲線、較高的電容值與較低的Dit表現，其Dit比傳統的PVD約可小4倍以上。

In this study, the use of experiment planning in the silicon substrate by sputtering (co-sputtering) deposition of 7 nm insulating layer of hafnium and zirconium oxide (HfZrO4), then by sputtering and high-power magnetron sputtering (HIPIMS) deposition a layer of 1.5 nm layer of a metal cap (Capping layer) of ZrN and then deposition a metal layer of titanium (TiN), and then the sample were then made a rapid thermal annealing (RTA) of 550 °C 、700 °C、 850 °C, after deposition aluminum (Al) as an electrode, so a gate electrode. Next on using by the current - voltage (I-V), capacitance - voltage (C-V), low-temperature measurements, chemical analysis cushions spectrometer (XPS), transmission electron microscopy (TEM), X-ray diffraction analysis (XRD), etc. analysis of the electrical and physical properties of the cap layer made using different deposition methods capacitor.
The results show, Deposition of ZrN capping layer (1.5 nm) of HIPIMS in ZrO2 based on high dielectric constant film, found a smaller than conventional PVD C-V hysteresis curve in the MIS structure, higher capacitance values Dit lower performance than the conventional PVD Dit as small as about 4 times.

摘要 IV
Abstract V
致 謝 VI
圖目錄 X
第一章 緒論 1
1.1 前言 1
1.2 高介電常數材料 1
1.3 金屬墊層 (capping layer) 2
1.4 論文的研究方向 3
第二章 文獻探討 4
2.1 MOS電容器結構與操作特性 4
2.1.1 電容器之結構 4
2.1.2 電容器操作特性 5
2.1.3金氧半電容器的漏電流機制 7
2.4 電容器之高介電常數材料 12
2.5 氧化層的結構改變: ZrN 15
2.6 HIPIMS與DC-MS 19
第三章 元件製程與設備原理 23
3.1 物性量測儀器簡介與原理 23
3.1.1功率脈衝磁控濺鍍法 (High Power Impulse Magnetron Sputtering) 的簡介 23
3.1.2射頻磁控濺鍍 (Radio Frequency Magnetron Sputtering) 的簡介 24
3.1.3 快速退火爐 (Rapid Thermal Annealing ) 的簡介 26
3.1.4 薄膜厚度量測 26
3.1.5 化學分析電子能譜儀分析 (X-ray hotoelectron　Spectroscopy，XPS) 27
3.1.6 穿透式電子顯微鏡 (Transmission electron microscope，TEM) 29
3.1.7 X-Ray 繞射 30
3.1.8 奈米壓痕儀 (Nanoindenter) 32
3.2 電性量測實驗設備 33
3.3 鉿鋯氧薄膜電容器製備 37
3.3.1 矽晶片前置處理 37
3.3.2 絕緣層鉿鋯氧 (HfZrO4) 沉積 37
3.3.3 金屬層氮化鋯 (ZrN) 沉積使用高功率磁控濺鍍 38
3.3.4 金屬層氮化鋯 (ZrN) 沉積使用射頻磁控濺鍍 38
3.3.5 金屬層氮化鈦 (TiN) 沉積使用射頻磁控濺鍍 39
3.3.6 熱退火 (Annealing) 處理 39
3.3.7上下鋁 (Al) 電極使用射頻磁控濺鍍 40
第四章 鋁/氮化鈦/氮化鋯/鉿鋯氧/矽電容器物性與化性分析 43
4.1化學分析電子能譜儀分析 (X-ray hotoelectron Spectroscopy，XPS) 43
4.2 X-Ray 繞射分析 48
4.3穿透式電子顯微鏡 (Transmission electron microscope，TEM) 分析 56
4.4奈米壓痕儀 (Nanoindenter) 分析 59
第五章 鋁/氮化鈦/氮化鋯/鉿鋯氧/矽 電容器電性分析 62
5.1 電流-電壓 (I-V) 特性曲線量測 62
5.2 電容-電壓 (C-V) 特性曲線量測 69
5.3 接面陷阱密度 (Dit) 量測 71
第六章 結論 73
6.1電性及物性之總結 73
6.2 未來展望 73
參考文獻 74
附錄 77

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