臺灣博碩士論文加值系統

本實驗主要針對自行配置的Pb(Zrx Ti1-x)O3溶膠-凝膠以旋鍍法與噴霧法由不同製程沉積於不同金屬基板上，並且對其微結構與電性特性進行探討。
PZT溶膠-凝膠藉由旋鍍法與噴霧法沉積在金屬鋁與鎳基板上，其膜厚約為3 μm與10 μm，經由分析XRD、介電常數與介電損失等參數，發現PZT膜沉積在鋁基板的性能優越於在鎳基板。因為藉由旋鍍法的技術所製備的PZT膜可以有效的降低孔洞率，而噴霧法的控製因素相對地不容易掌控，導致會產生膜的不均勻或孔洞率過大，使膜的龜裂或剝落。在熱處理溫度600 ℃下燒結，發現金屬鎳基板無法承受此高溫而發生氧化，進而影響PZT膜的附著情形，而鋁基板會在表面產生一層保護膜，因此氧化的情形不會像在金屬基板鎳上的嚴重。
極化的過程確實有助於增加壓電膜的結晶性，PZT膜經過極化後，XRD的結晶強度有明顯提升，而介電常數與介電損失各有增加與減小的趨勢。另外，在不同製作流程下，發現製作流程m2(連續披覆n層再經由退火處理)的整個實驗流程時間比製作流程m1(每披覆一層即實施退火處理)來的短；並且製作流程m2的介電損耗值比製作流程m1小，所以在PZT膜的應用領域中，如果要求較小的能量損失及短的製作流程，可以採用製作流程m2來製作PZT壓電膜。

This main object of this study is to fabricated the self-tuned Pb(Zrx Ti1-x)O3 sol-gel on different substrates by spin and spray coating technologies, and investigate the variety of their microstructures and characteristics.
The thicknesses of PZT films were around 3 μm and 10 μm by sol - gel spin and spray coating technologies, respectively, on aluminum (Al) and nickel (Ni) substrates. Through the measurements and analyses of XRD, dielectric constant and dielectric loss, the performances of PZT film deposited on Al substrate were superior to Ni one. This may be due to that the porosity of PZT film fabricated by spin coating technology could be reduced efficiently. However, the fabricating parameters of spray coating technology were not regular, and this would result in the unfairness and larger porosity of PZT film. Then the film fabricated by spray coating technology was easy to crack or peel off. During the sintering process of 600 ℃, oxidation of Ni substrate happened and thereby affected the attachment of PZT film on Ni substrate. Nevertheless, the Al substrate would form a protective surface to avoid further oxidation on substrates.
Polarizing process increased the crystallization of piezoelectric film. After polarization, the intensity of crystallization of PZT film increased, and the dielectric constant and dielectric losses increased or decreased, respectively. In addition, for the various fabricating processes, the entire fabricating period for process m2 (continuous deposits n layers and then applies the annealing process one time) was shorter than that of process m1 (deposits one layer and passes the heat treatment). And the dielectric loss of process m2 was less than that of process m1. Therefore, for the application of PZT films, process m2 was suitable for fabricating the PZT film required less energy loss and short depositing process.

中文摘要 ………………………………………..………………………………….…....... i
英文摘要 ………………………………………..………………………………….…....... ii
誌謝 ………………………………………..………………………………….…............... iii
目錄 ………………………………………..………………………………….…............... iv
表目錄 ………………………………………..………………………………….…........... vii
圖目錄 ………………………………………..………………………………….…........... viii
一、緒論 …………………………………………………………………………...……... 1
1-1 前言 ……………………………………………………………………….....…... 1
1-2 研究目地 ………………………………......…………………………………….. 2
二、文獻回顧 …..…………………………………......………………………………….. 3
2-1 陶瓷材料簡史 …………………………………………………......……......…….. 3
2-1-1 壓電特性 …………………………........…………………………………….. 5
2-1-2 正壓電效應 ………………………………................……………………….. 8
2-1-3 負壓電效應 …………………………………................…………………….. 9
2-2 薄膜製備方法 …………………………......…..……………………....….............. 10
2-2-1 PVD法 ………......………………........…............………………………….. 11
2-2-2 CVD法 ………......…………………………………………………….......... 11
2-3 液相成長法前驅物的選用 ………………………....…………………………….. 12
2-3-1 溶膠-凝膠(Sol-gel) …………………………………..……………..…….. 13
2-3-2 直流濺射鍍膜系統 ………………………..……………………..……….. 15
2-3-3 有機金屬化學氣相沈積法 …………………..…………………..……….. 16
2-3-4 噴霧法(Spray coating) …………………………………………………….. 18
2-3-5 網印法 ………………..…………………………………………………….. 18
2-4 極化方法 …………………………………………........…………………….......... 18
2-4-1 電暈放電(Corona discharge) ……………………………………………….. 18
2-5 陶瓷材料的應用 ………………………………………………………………….. 20
2-5-1 鐵電薄膜在DRAM的應用 ……………………………………………….... 20
2-5-2 感測元件 ……………………………...………………………………….….. 21
2-5-3 壓電致動器 ………………………………………….....…………………..... 22
2-5-4 超音波感測器 …………………………………....………………………….. 22
2-5-5 壓電壓力感測器 …………………………………………………………….. 23
2-5-6 紅外線偵測器 …………………………………....………………………….. 24
2-5-7 陶瓷變壓器 ………………………………………………………………….. 24
2-6 介電常數分析 ………………………………………………………..……….. 25
2-7 介電損耗分析 …..…………………………………………………………….. 27
三、實驗與特性量測 ………………………………………....………………………….. 30
3-1 溶膠-凝膠製備 ……………………………………………....…………………….. 30
3-2 基材準備與sol-gel的披覆 ………………………………..……………………… 33
3-2-1 基材清洗 …………………………………....……………………………….. 33
3-2-2 旋轉塗佈 ………………………………....………………………………….. 35
3-2-3 噴霧塗佈 ......……………………..…………………....…………………….. 37
3-3 熱處理與極化 …………..……………………………..………………………….. 38
3-4 PZT膜特性量測 …………………………………..……………………………….. 40
3-4-1 X光繞射分析儀(XRD) …………………......……………………………….. 40
3-4-2 介電常數 ………………………………………....……………………..….. 41
3-4-3 介電損耗 ……………………………………....……………………..…….. 42
四、結果與討論 …………………………………………………....…………………….. 43
4-1 X-ray繞射分析 …………………………………....……………………………….. 43
4-1-1 旋鍍與噴霧法之比較 …………………......……………………………….. 45
4-1-2 Al與Ni基板之比較 ………………………......…………………………… 45
4-1-3 不同層數之比較 ……………..........……………....……………………….. 46
4-2 介電常數 ………………..............……………………......……………………….. 46
4-3 介電損耗 …………..............………………………......………………………….. 49
4-4 製程改變的探討 …………..........……………………..………………………….. 51
4-4-1 XRD分析 ………………………………………....………………………….. 53
4-4-2 介電常數與介電損失 ………………………........………………………….. 54
4-5 極化的影響 ………………………………………………..........………………… 56
4-5-1 XRD分析 …………………………………………....……………………….. 57
4-5-2 介電常數與介電損耗分析 ………………………………………………….. 59
五、結論 ……………………………………………………………………..……............ 61
參考文獻 ………………………………………..…………………………….................... 63

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