臺灣博碩士論文加值系統

氮砷銻化鎵材料在適當的銻/氮莫爾分率比可有晶格匹配砷化鎵以及能隙低於砷化鎵基板的特性。故此材料是一具有潛力應用砷化鎵基板之上的異質接面電晶體(HBT)或是堆疊式太陽電池的子電池。但是摻入氮會造成塊材材料內部或是異質接面處產生缺陷，使得HBT應用上無法得到高增益，太陽電池應用上無法提高開路電壓。
本篇論文的研究主題使用能隙為1.17-eV之砷化鎵/氮砷銻化鎵在砷化鎵基板上成長異質接面p-i-n元件之特性分析。由不同氮砷銻化鎵厚度(250、500、1000和2000 nm)的元件在不同熱退火條件下的電流電壓特性。未經熱退火製程在順向偏壓中，相同電流密度(0.05 mA/cm2)時電壓隨著厚度的減少而上升0.38至0.46伏特，顯示磊晶的缺陷隨著厚度增加而逐漸產生。經熱退火製程後電流密度變化則不明顯，顯示與元件的厚度無關為表面的復合電流所影響。由飽和電流密度對溫度的關係，我們可求得元件飽和電流密度的活化能，我們發現熱退火後可以讓該活化能趨近能隙，表示表面復合電流下降。熱退火後的的元件經鈍化處理後相同電流密度(0.05 mA/cm2)時電壓會上升50~70 mV，在42倍AM1.5G太陽模擬光源照射時太陽電池轉換效率6.6%

We study the fabrication and the properties of GaAs/GaAs0.97Sb0.02N0.01 heterjunction diodes deposited on GaAs. The energy gap of the GaAs0.97Sb0.02N0.01 layer is 1.17 eV. We found that all the forward currents are higher than the expected p/n junction diffusion current and increases as the GaAs0.97Sb0.02N0.01 layer thickness increases. In addition, the current is proportional to the perimeter instead of the area of the junction, suggesting that it originates from the recombination on the junction surface. From the Arrhenius plot of the saturation current, we found that the activation energy of the as-grown sample is close to half the energy gap of GaAs0.97Sb0.02N0.01, suggesting that the current is a defect recombination current. After thermal annealing, the activation energy increases, indicating the suppression of the surface recombination current. Coating SiN and SiN/SiO2 passivation layers on the junction surface significantly reduces both the reverse and forward currents. The passivated GaAs/ GaAs0.97Sb0.02N0.01 heterjunction shows an optimum conversion efficiency of 6.6% under 42 times of AM1.5G illumination.

誌謝 I
中文摘要 II
Abstract III
目錄 IV
附表索引 VI
附圖索引 VII
第一章 序論 1
1.1 相關文獻 2
1.2 論文架構 5
第二章 元件製作與量測系統 9
2.1 樣品磊晶成長 9
2.2 元件製程 10
2.3系統設置與量測 17
第三章 實驗結果與討論 25
3.1應用於p-i-n元件內之氮砷銻化鎵基本特性 25
3.2電流電壓特性 26
3.2.1未受熱退火元件之電流電壓特性 26
3.2.2受熱退火處理後之元件電流電壓特性 27
3.2.3變溫量測暗電流電壓特性 29
3.2.4鈍化處理對暗電流電壓特性的影響 30
3.3照光之電流電壓特性 30
第四章 總結 44
參考文獻 45

1.M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, and M. Okai,“GaInNAs: A Novel Material for Long-Wavelength Semiconductor Lasers,” IEEE Journal of Selected Topics in Quantum Electronics, 3, p. 719(1997).
2.F. Bousbih, S. B. Bouzid, A. Hamdouni, R. Chtourou, and J. C. Harmand,“Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-XNX layers,” Materials Science and Engineering, B 123, p. 211(2005).
3.S. Y. Xie, S. F. Yoon, and S. Z. Wang,“Photoluminescence properties of p-type InGaAsN grown by rf plasma-assisted molecular beam epitaxy,” Applied Physics A – Materials Science & Processing, 81, p. 987(2005).
4.J. Li, S. Iyer, S. Bharatan, L. Wu, K. Nunna, and W. Collis, “Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells,” Journal of Applied Physics, 98, p. 013703(2005).
5.T. Kageyama, T. Miyamoto, S. Makino, F. Koyama, and K. Iga, “Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence,” Journal of Applied Physics, 38, L 298(1999).
6.W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, and W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” Journal of Applied Physics, 101, p. 033122 (2007).
7.N. Miyashita, Y. Shimizu, N. Kobayashi, Y. Okada, and M. Yamaguchi, “Fabrication of GaInNAs-based solar cells for application to multi-junction tandem solar cells,” IEEE 4th World Conference on Photovoltaic Energy Conversion (2006).
8.S. Fedderwitz, A. Stöhr, S. F. Yoon, K. H. Tan, M. Wei, W. K. Loke, A. Poloczek, S. Wicaksono, and D. Jager “Multigigabit 1.3 μm GaNAsSb/GaAs Photodetectors,” Applied Physicd Letters, 93, p. 033509 (2008).
9.W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, J. A. Gupta, and S. P. Mcalister, “High-Gain Low Turn-On VoltageAlGaAs/GaAsNSb /GaAs Heterojunction BipolarTransistors Grown by Molecular Beam Epitaxy,” IEEE Electron Device Letters, 28, p.1083 (2007).
10.K. L. Lew, S. F. Yoon, H. Wang, and S. Wicaksono, “GaAsNSb base GaAs heterojunction bipolar transistor with a low turn-on voltage,” Journal of Vacuum Science and Technology, B24(3), p. 1308 (2006).
11.G. Ungaro, G. Le Roux, R. Teissier and J. C. Harmand, “GaAsSbN: a new low-bandgap material for GaAs substrates,” Electronics Letters, . 35, p. 1246(1999).
12.S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Cheah, “Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs,” Journal of Crystal Growth, 274 , p. 355(2005).
13.J. D. Perkins, A. Mascarenhas, Yong Zhang, J. F. Geisz, D. J. Friedman, J. M. Olson, and Sarah R. Kurtz, “Nitrogen-Activated Transitions Level Repulsion and Band Gap Reduction in GaAs1-XNX with x < 0.03,” Physical Review Letters, 82, p. 3312(1999).