臺灣博碩士論文加值系統

本研究以化學水浴沉積法成長ZnS緩衝層薄膜，藉由改變其製程，由傳統的一階段CBD製程為熱力學平衡下反應的過程，因此整個過程相當廢時。在反應溶液內產生均質成核的情況相當嚴重，易影響ZnS與基板結合的平整性，且在反應結束後，易有ZnS顆粒吸附於緩衝層薄膜上方，造成結構鬆散，薄膜易脫落的現象。因此，改為兩階段CBD製程，將玻璃基板浸泡再反應溶液1小時後再將基板放至另一玻璃反應溶液，使基板在一新的環境下進璃反應，希望藉由改變製程的因素，得到更優異的CBD緩衝層薄膜，並探討其薄膜之表面形貌及光學性質，藉此得到理想的緩衝層薄膜。
經由研究結果得知，以兩階段CBD製程的緩衝層膜膜，其薄膜批覆性、均勻性經由FE-SEM及AFM觀察，經由UV-vis可以得知其平均穿透度雖然略微下降，但其光學能隙帶由~3.4eV提升至~3.9eV。經由XPS可以得知，硫脲有利於氧化鋅的形成，隨硫脲濃度的增加Zn2p3/2的ZnS(1021.7V)峰值產生藍移至ZnO(1022.4eV)。

In this study, chemical bath deposition (CBD) is employed to growth ZnS buffer layers. Traditional CBD process, as a single-stage process operated under thermodynamic equilibrium, the whole process is time consuming. Furthermore, there is inevitably some ZnS particles resided on the substrate owing to the homogeneous nucleation took place in the solution which will deteriorate the quality of the as-deposited ZnS then film. To alleviate this disadvantage, we apply a novel two-stage CBD process which divide the deposition into two regimes. At the first pot, the glass substrate was dipped in for 1 hour during which the adsorption of complex ions onto the substrate surface took place. After that, the substrate was put in a new bath for the surface reaction of zinc- and sulfur-containing complex ions to proceed.
It shows that by applying a two-stage CBD process, a ZnS film with more compact and smooth surface structures could be derived as observed by FE-SEM and AFM. The optical transmittance is declined, as measured by UV-vis spectroscopy, however, the optical band-gap of the as deposited ZnS films were increased from ~ 3.4eV to ~ 3.9eV. XPS analysis confirms that the as-deposited CBD-ZnS films containing minor ZnO phase. The thiourea favors the formation of ZnO phase in this case, as the concentration of thiourea increased, the Zn2p3/2 peak of ZnS (1021.7 eV) blue shifts to 1022.4eV, which is the characteristic Zn2p3/2 peak of ZnO.

目錄
摘要.....i
Abstract.....ii
誌謝.....iii
目錄.....iv
圖目錄.....vi
表目錄.....viii
第一章 緒論.....1
1.1 前言.....1
1.2 研究目的與動機.....3
第二章 基本原理與文獻回顧 .....4
2.1 太陽電池種類.....5
2.1.1 矽晶太陽能電池.....5
2.1.2 化合物半導體太陽能電池.....6
2.1.3 有機太陽能電池.....7
2.2 太陽電池基本原理.....7
2.3 銅銦鎵硒太陽能電池.....10
2.3.1 鈉玻璃基板(Soda-lime Glass).....11
2.3.2 鉬背電極.....11
2.3.3 銅銦鎵硒吸收層.....12
2.3.4 緩衝層(BufferLayer).....12
2.3.5 透明導電層(ZnO:Al).....14
2.4 化學水浴沉積法(CBD).....16
2.4.1 成膜機制(Reaction mechanisms).....16
2.4.2 以CBD法沉積ZnS薄膜之反應機制.....19
第三章 實驗步驟與流程.....21
3.1 實驗藥品.....21
3.2 製程設備及儀器.....23
3.3 實驗流程.....24
3.3.1 清洗基板.....24
3.3.2 硫化鋅緩衝層製程.....25
3.4 材料特性分析.....28
3.4.1 冷場發射型掃描式電子顯微鏡(FE-SEM).....29
3.4.2 紫外/可見光光譜分析儀(UV-VIS).....30
3.4.3 X光繞射儀(XRD).....31
3.4.4 原子力顯微鏡(AFM).....32
3.4.5 化學分析電子能譜儀(ESCA).....33
第四章 結果與討論.....34
4.1 CdS緩衝層薄膜.....34
4.2 ZnS一階段CBD製程.....40
4.3 兩階段CBD製程.....46
第五章 結論.....52
參考文獻.....53



 
圖目錄
圖2-1 太陽能電池效率演進.....6
圖2-2 太陽光譜圖.....8
圖2-3 空氣質量定義圖.....8
圖2-4 太陽電池工作原理.....9
圖2-5 CIGS各層結構.....10
圖2-6 緩衝層不同製備方法之轉換效率.....14
圖2-7 以不同材料為緩衝層之CIGS光電轉換效率.....15
圖2-8 沉膜機制示意圖.....17
圖2-9 化學水浴沉積法反應三個階段示意圖.....18
圖2-10 ZnS CBD成膜反應機構.....20
圖3-1 化學水浴沉積法設備示意圖.....26
圖3-2 實驗流程圖.....27
圖3-4 紫外/可見光光譜分析儀.....30
圖3-5 X光繞射儀.....31
圖3-6 原子力顯微鏡.....32
圖3-7 化學分析電子能譜儀.....33
圖4-1 CdS薄膜之FE-SEM : 不同SC(NH2)2濃度之影響.....36
圖4-2 CdS薄膜之AFM : 不同SC(NH2)2濃度之影響.....37
圖4-3 CdS薄膜之UV-vis : 不同SC(NH2)2濃度之影響.....38
圖4-4 CdS薄膜之能隙 : 不同SC(NH2)2濃度之影響.....38
圖4-5 CdS薄膜之XRD : 不同SC(NH2)2濃度之影響.....39
圖4-6 CdS薄膜之XPS : 不同SC(NH2)2濃度之影響.....40
圖4-7 ZnS薄膜之FE-SEM : 不同SC(NH2)2濃度之影響.....42
圖4-8 ZnS薄膜之AFM : 不同SC(NH2)2濃度之影響.....43
圖4-9 ZnS薄膜之UV-vis : 不同SC(NH2)2濃度之影響.....44
圖4-10 ZnS薄膜之能隙 : 不同SC(NH2)2濃度之影響.....44
圖4-11 ZnS薄膜之XRD : 不同SC(NH2)2濃度之影響.....45
圖4-12 ZnS薄膜之XPS : 不同SC(NH2)2濃度之影響.....45
圖4-13 ZnS薄膜之FE-SEM : 不同SC(NH2)2濃度順序之影響.....48
圖4-14 ZnS薄膜之AFM : 不同SC(NH2)2濃度順序之影響.....49
圖4-15 ZnS薄膜之UV-vis : 不同SC(NH2)2濃度順序之影響.....50
圖4-16 ZnS薄膜之能隙 : 不同SC(NH2)2濃度順序之影響.....50
圖4-17 ZnS薄膜之XRD : 不同SC(NH2)2濃度順序之影響.....51
圖4-18 ZnS薄膜之XPS : 不同SC(NH2)2濃度順序之影響.....51

 
表目錄
表1 CdS與ZnS緩衝層比較.....2
表2 CdS緩衝層濃度代號.....34
表3 一階段CBD-ZnS製程濃度代號.....40
表4 兩階段CBD-ZnS製程濃度代號.....46

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