臺灣博碩士論文加值系統

現有的商用厚膜電阻膏大部分是針對氧化鋁基板所配製，因此應用在氮化鋁基板時，氮化鋁容易和厚膜電阻膏中的氧化鉛（PbO）反應，產生氮氣存在於電阻層中或電阻層與基板的介面，無法產生適當的接著，造成電阻特性的不穩定性。氮化鋁基板有極佳的散熱性，且其熱膨脹係數和矽晶片相近，是一極佳的陶瓷基板材料。
本研究在商用厚膜電阻膏中添加氧化物（Al2O3和MnO2），以網版印刷的方式，將改質後的電阻膏塗佈於氮化鋁基板上，探討電阻層在燒結後之電阻值、Hot TCR、氣孔分布以及介面微結構。
低阻值電阻膏（10Ω/□）於添加氧化物並經燒結後，其電阻值約為320Ω/□，高於低阻值的目標，Hot TCR可控制在正負100ppm/℃之間。中阻值電阻膏（1KΩ/□）於添加氧化物並經燒結後，其電阻值約1KΩ/□以及Hot TCR為44 ppm/℃。而高阻值電阻膏於添加氧化物並經燒結後其電阻值為18 KΩ/□，而且Hot TCR可控制在正負100ppm/℃之間。

Most of the commercial thick film pastes are formulated for alumina(Al2O3) substrate. When the commercial thick film pastes were applied on aluminum nitride (AlN) substrate, because of the reaction between AlN and the glass of the commercial thick film pastes, nitrogen was released and blisters were formed in the resistor layer or at the interface between the resistor layer and AlN substrate. They were incompatible with AlN. The blistering resulted in instability of the resistor’s characteristics. AlN is an appropriate substrate material for electronic parts because of its high thermal conductivity, and the thermal expansion coefficient close to that of silicon.
The oxide was added into commercial thick film pastes and was then printed on the AlN substrate. The microstructures of the interface were observed. The electrical properties of the oxide added resistors were investigated.
When oxide was added into low resistance value resistors（Rs=10）, sheet resistance of the resistors is 320Ω/□ and its Hot TCR can be controlled in the 100 ppm/℃ range. When oxide was added into middle resistance value resistors（1 KΩ/□）, sheet resistance of the resistors is 1 KΩ/□ and its Hot TCR is 44 ppm/℃. When oxide was added into high resistance value resistors（10KΩ/□）, sheet resistance of the resistors is 18 KΩ/□. And its Hot TCR can be controlled in the 100 ppm/℃ range.

中文摘要………………………………………………………………..Ⅰ
英文摘要………………………………………………………………..Ⅱ
致謝…………………………………………………………………..…Ⅳ
目錄……………………………………………………………………..Ⅴ
圖表目錄……………………………………………………………….VII
第一章 緒論….….………………………….………………………….1
1-1 前言…………….……………………………………...1
1-2 研究動機及目的.……………..………..……………...1
第二章 前人相關研究..………………..…………………….………...4
2-1 厚膜電阻……………………………….…………………4
2-1-1 厚膜電阻的導電機構……………………………5
2-1-2 玻璃粒徑和導電粒徑對燒結後電阻值的影響…7
2-1-3 厚膜電阻的燒結…………………………………8
2-1-4 燒成氣氛及添加物的影響……………………..10
2-1-5 厚膜電阻值和TCR的計算……………………11
2-2 氮化鋁基板….………….…………………………...14
2-2-1 塗料改質..………………………………………16
第三章 實驗步驟及方法…...………………………………………...17
3-1 塗料的改變及燒成…………………………………….17
3-1-1 塗料改質……………………………………….17
3-1-2 塗料塗佈及燒成……………………………….18
3-1-3電極的間距及電阻的寬度…………………….18
3-2 電性的量測和微結構的觀察……………………….…20
第四章 結果與討論……………………………………….………….21
4-1 中阻值 1KΩ/□（Shoei R-2310）………..…………21
4-2 低阻值 10Ω/□（Shoei R-2110）..………………….35
4-3 高阻值 10KΩ/□（Shoei R-2410）…………………48
第五章 結論……………………………………….………………….57
參考文獻……………………………………….……………………….59

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