臺灣博碩士論文加值系統

天線切換開關廣用於現代微波系統中，此開關採用單晶微波積體電路(MMIC)製作。利用AlGaAs/InGaAs假晶式高電子遷移率電晶體(pHEMT) 製作之切換開關具有低插入損、高隔離度、高功率處理能力等優點。本研究製作一顆面積為1278μm*1154μm雙極雙投(DPDT)切換開關，此開關之控制電壓為3伏特，使用頻率範圍為DC-6GHz。本切換開關於2.45GHz時所量測到的插入損為1.1dB、隔離度為47dB、以及1dB功率壓縮點(P1dB)為30dBm。在5.8GHz時，插入損為1.1dB、隔離度為35dB、P1dB 為29.5dBm。本文製作之切換開關應用在分集天線系統中，符合無線區域網路(WLAN) IEEE 802.11 a/b/g 之規範。未來將研製4P4T切換開關，應用於多進多出(MIMO)天線技術中。

pHEMT antenna switch has been widely used into advanced monolithic microwave integrated circuits (MMIC) for modern microwave system applications. The advantages of the AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor(pHEMT) antenna switch are low insertion loss , high isolation , and high power handling. A double pole double throw (DPDT) switch has been fabricated and tested for DC-6GHz application. The number of the gate finger is chosen as 2 , and the die area is 1278μm x 1154μm .The control voltage used for the switch is 3V. The measured insertion loss is 1.1dB at 2.45GHz. The isolation of the device is 47dB, and the power 1dB compression point (P1dB) is 30 dBm . The insertion loss is 1.1 dB , the isolation is 35dB, and P1dB is 29.5 dBm at 5.8GHz.
A typical application of the DPDT switch is for diversity antenna switching in IEEE 802.11a/b/g Wireless LAN systems. In future, the 4P4T switch will be studied for MIMO application.

ABSTRACT II
誌謝 III
目錄 IV
表目錄 VI
圖目錄 VII
第一章 導論 1
1.1 無線通訊發展相關研究概況 1
1.2研究動機 1
1.3論文架構 4
第二章 射頻切換開關 5
2.1 微波切換開關種類 5
2.2 PIN 二極體射頻切換開關 5
2.3 砷化鎵微波切換開關 7
2.4 CMOS射頻切換開關 9
2.5 WLAN天線分集系統的切換模式 10
第三章 PHEMT 切換開關製程介紹 10
3.1 砷化鎵半導體元件 11
3.2 PHEMT電晶體 11
3.3 0.5μM 砷化銦鎵 PHEMT 切換開關製程 12
第四章 雙極雙投切換開關電路設計 18
4.1 電路原理 18
4.2 電路模擬及佈局 20
第五章 切換開關射頻參數量測 38
5.1隔離度與插入損之量測 38
5.2 三階交會點量測 41
5.3 1dB增益壓縮點量測 47
5.4諧波量測 50
5.5 功率與時間關係量測 52
第六章 結論與未來展望 57
參考文獻 58

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