臺灣博碩士論文加值系統

本論文的研究目的為以奈米金用自組裝的方法做為電荷捕捉層，並以低溫製程氧化鋅做為電晶體通道層，我們使用了APTMS、MPTES兩種不同的連結層來附著上我們的奈米金，再以原子力顯微鏡掃描元件的奈米金附著情況，再調整阻擋氧化層及穿隧氧化層的厚度，利用延續研究的溶膠凝膠法氧化鋅溶液作為通道層，完成以後元件擁有優良的寫入特性，其中又以APTMS的連結層，記憶視窗可以達到8伏特，證明了奈米金作為電荷捕捉層的記憶體元件是可行的，在最後，我們利用加熱的方式，使得放置一年後的元件，電性有相當不錯的改善。

This work reports a versatile technique for enhancing charge storage nonvolatile memory device using a direct assembly of gold-nanoparticles (AuNPs) as a charge trapping layer and zinc oxide (ZnO) as semiconductor layer. We have used two types of linker to deposit AuNPs, which are 3-aminopropyltrimethoxysilane (APTMS) and 3-mercaptopropyltriethoxysilane (MPTES) followed by gold colloidal. Atomic force microscopy (AFM) image showed the surface morphology of the well-separated immobilized AuNPs on a SiO2/p-Si. According to the programming operations, the memory device showed good programmable memory characteristics with 8 V memory windows with better characteristics, at last, thermal annealing for improving nonvolatile memory has been research.

Abstract (Chinese) I
Abstract (English) II
Acknowledgements (in Chinese) IV
Contents V
List of Tables VIII
List of Figures IX

Chapter 1: Introduction 1
1.1 Background 1
1.2 Motivation 2
1.3 Thesis Organization 3

Chapter 2: Principles and Operations 4
2.1 Introduction of ZnO 4
2.1.1 ZnO Characteristics 4
2.1.2 Introduction of ZnO Oxygen Vacancy 8
2.1.3 Introduction of ZnO Deposition Method 9
2.1.4 ZnO Hot Anneal Treatment 12
2.2 Introduction of Thin Film Transistor 13
2.2.1 Structure of Bottom Gate Thin Film Transistor 13
2.2.2 Determination of the Threshold Voltage 13
2.2.3 Determination of the Field Effect Mobility 14
2.2.4 Determination of the On-Off Current Ratio 15
2.2.5 Polyimide Thin Film Transistor 15
2.3 Introduction of Flash Memory 17
2.3.1 Memory History 17
2.3.2 Structure of Flash Memory 20
2.3.3 Flash Memory Mechanism 27

Chapter 3: Fabrication of Gold Nano-particles Charge Trapping Layer Flash Memory 28
3.1 Introduction 28
3.2 Experimental 29
3.2.1 Experimental Equipment 29
3.2.2 Experimental Materials 33 3.2.3 Experimental Method 41
3.3 Results and Discussion 46
3.3.1 AFM Analysis of Gold nanoparticles 46
3.3.2 Mechanism 54
3.3.3 The C-V curve in the Gold-nanoparticles capacitor 56
3.3.4 I-V Characteristics 57
3.4 Summary 60

Chapter 4: Thermal Annealing for Improved Nonvolatile Memory Reliability Applications 62
4.1 Introduction 62
4.2 Results and Discussion 63
4.2.1 Thermal annealing for improved memory reliability 63
4.2.2 Thermal annealing for improved program properties 66
4.3 Summary 77

Chapter 5: Conclusions and Future Work 78
5.1 Conclusions 78
5.2 Future work 79

References 83

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