臺灣博碩士論文加值系統

本論文以雷射切割製程搭配電化學濕式蝕刻技術，製備具有奈米多孔隙結構的氮化鎵反射鏡發光二極體元件，經由雷射切割定義蝕刻區域與電化學濕式蝕刻製程後，在元件底部以未摻雜氮化鎵與高濃度矽摻雜(n+-GaN:Si)N型氮化鎵層交互疊加，利用硝酸選擇性蝕刻特性，製作具有高折射率差值之反射鏡。此反射鏡結構是以高濃度矽摻雜之氮化鎵經電化學蝕刻成奈米多孔隙結構與未摻雜之氮化鎵成對交互堆疊而成，奈米多孔隙結構具有低折射率的特性，與未摻雜之高折射率氮化鎵搭配可形成高反射率反射鏡提升發光二極體的發光強度。且反射鏡光學厚度需滿足1/4中心波長的條件，並依據使用材料之折射率即可用於設計及製作具奈米孔隙結構之高反射率反射鏡。

In this thesis, the laser scribing process and electrochemical wet etching process were used to prepare a GaN light-emitting diode with nano-porous (NP) reflector structure. The mesa region was defined through the laser scribing process and electrochemical wet etching process. The Si-heavy doped GaN layer (n+-GaN:Si) and undoped GaN layer are alternately superimposed, then transforms into a NP-GaN/u-GaN reflector. The large refractive index difference between NP-GaN and u-GaN layers can achieve a high light reflector and a wide wavelength region. The refractive index of the NP-GaN can be extracted by the epitaxial growth and EC etching process of the NP-reflector structure. High reflectivity of the NP-reflector can be achieved by forming the symmetry quarter-wavelength NP-GaN and u-GaN layers.

中文摘要 I
Abstract II
章節目錄 III
圖目錄 IV
表目錄 VI
第一章序論 1
1.1 照明技術發展演進 1
1.2 發光二極體簡介 2
1.3 布拉格反射鏡簡介 3
1.4 研究動機 5
第二章原理與文獻回顧 6
2.1 發光二極體之發光原理 6
2.2 布拉格反射鏡文獻回顧 7
2.3 氮化鎵選擇性電化學蝕刻機制文獻回顧 9
第三章實驗方法與步驟 12
3.1 實驗設計流程圖 12
3.2 試片製備流程 14
3.3 製程設備 15
3.4 分析設備 17
第四章實驗結果與討論 20
4.1 FIB與SEM試片分析結果比較 20
4.2具奈米多孔隙反射鏡之光學顯微鏡俯視圖 22
4.3具奈米多孔隙反射鏡之掃描式電子顯微鏡截面圖 23
4.4具奈米多孔隙反射鏡之反射率量測 25
4.5具奈米多孔隙反射鏡之光激發光譜量測 27
4.6具奈米多孔隙反射鏡之脈衝雷射光激發光(Optical pumping)量測 28
4.7單層孔隙結構與奈米孔隙反射鏡比較 28
4.8具奈米多孔隙反射鏡之偏振光光學顯微鏡俯視圖 30
第五章結論與未來展望 31
5.1 結論 31
5.2 未來展望 32
參考文獻 33

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