臺灣博碩士論文加值系統

TFT-LCD 製程中，蝕刻功用為將所需之線路或圖形產生，將黃光製程前玻璃基板表面沉積之薄膜(通常厚度為數千Å)沒有被光阻覆蓋之區域，以化學或物理反應將之除去，以此方式將光罩定義之圖型進行轉移至原先沉積之薄膜上，這圖型或線路未來將成為TFT-LCD 中元件成員之一。
目前用於TFT-LCD 蝕刻技術上主要有濕蝕刻(Wet Etching)及乾蝕刻(Dry Etching)兩種方式，前者主要利用化學性(藥水)反應進行蝕刻;後者採用物理性(電漿)反應進行蝕刻,當然後者藉由參數之微調也有傾向化學性之乾蝕刻; 就結果而言,濕蝕刻有較佳之產能利於生產,但藥水的非等向性蝕刻會造成undercut問題而有線寬控制較差之結果;相對而言，乾蝕刻機台雖抽真空過程造成產能較低，非等向性蝕刻卻有較佳之線寬控制。
本論文所將探討如何以乾蝕刻製程方式,微調參數,進而達到類濕蝕刻之乾蝕刻製程(化學性側蝕法)，藉此提高產能並降低乾蝕刻製程中產生之瑕疵問題(Defect) 。
研究內容將利用因果舉證法與田口實驗法，進行乾蝕刻機台參數微調為化學性側蝕法之因子進行研究，對因子做出篩選，藉由實驗找出正確因子，進而對製程條件做出改善，最終可將此化學性側蝕法導入生產行列。

During TFT-LCD array process, etching plays a crucial role of creating designed circuits and patterns. By applying chemical or physical process etching can remove certain parts of the deposit film which are not protected by the photo resist. Therefore it can transfer specific patterns from the photo mask to the deposit film (usually thousands of Å) on the glass. The transferred circuit and patterns are important components in the TFT-LCD manufacturing process.
Currently there are two types of etching techniques in TFT LCD etching process, Wet and Dry Etching. The former applies chemical agent while the later takes the physical reaction approach (via plasma); In practice one can fine tune some parameters to change dry etching to behave like chemical type. Conventional results show Wet etching is superior in terms of factory throughput. However its isotropic etching by chemical agent may cause undercut issue, which makes line width hard to control. To the contrary although Dry Etching has lower throughput that is introduced by vacuuming process. Its anisotropic property makes it a great method when line width quality is a top priority.
The focus of this dissertation is on Dry Etching. We will show by fine tuning some dry etching parameters to make it similar to wet etching, one can achieve the benefit of both wet and dry etching, i.e. higher throughput and better line width control (less occurrence of defects).
This paper applied the methodology of Evidence Act and Taguchi experimental method to research the genuine parameters that make Dry Etching process act similar to the wet one. We filtered the candidate parameters and searched for the optimized parameter set in the experiments. We hope the study results can improve existing dry etching process recipe and eventually this new concept can be introduced in the mass-production manufacturing process.

摘要.........................................................I
致.........................................................V
目錄........................................................VI
表目錄........................................................IX
圖目錄.........................................................X
第一章 緒論. ..............................................1
1.1 前言..................................................1
1.2 TFT LCD的結構...........................................1
第二章 研究背景.............................................6
2.1 TFT-LCD的製程流程....................................6
2.2 Array 段蝕刻製程.....................................8
2.2.1 乾蝕刻(Dry Etching)..............................8
2.2.2 濕蝕刻(Wet Etching)..............................9
2.2.3 電漿原理介紹......................................10
2.2.4 乾蝕刻設備介紹....................................11
2.3 研究目的...............................................12
2.3.1 提升產能.........................................12
2.3.2 降低硬體傷害......................................13
2.3.3 降低乾蝕刻製程之缺陷...............................13
2.3.4 降低成本.........................................15
2.4文獻回顧.... .........................................15
2.4.1 蝕刻壓力與Side wall angle 之關係式.................16
2.4.2 氣體流量與反應電壓對蝕刻率之關係式...................17
2.4.3 反應電壓Bias對Side wall angle之關係式..............18
2.4.4乾蝕刻反應電壓Bias &; O2氣體流量對contact hole angle關係
式…19
2.4.5 Contact hole undercut與 &; O2氣體流量關係..........20
2.5研究方法............................................21
第三章 研究內容.............................................23
3.1　研究概要............................................23
3.2　研究方式............................................23
3.2.1 QC七大手法-特性要因圖（Causes &; Effects Chart）....23
3.2.2 QC七大手法-散佈圖 （Scattered Diagram）...........24
3.2.3田口實驗設計....... ...............................24
第四章　實驗設計與分析.......................................26
4.1現狀分析..............................................26
4.2 田口L9表製作.........................................26
4.3 田口L9 SEM 實測比較...................................28
4.4特性要因圖預測　.......................................30
4.5 因果矩陣圖推測........................................31
4.6 實驗............... ................................32
4.6.1 N+ post treatment 實驗..........................32
4.6.2 乾蝕刻BP Over etch...............................34
4.6.3 鍍膜參數比較......................................35
4.6.4 蝕刻區參數製程能力再確認............................40
4.7 改善結果確認..... ..................................43
第五章 結論與未來展望.......................................45
5.1 結論..............................................45
5.2 未來與展望.............................................45
參考文獻.............................................46

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