臺灣博碩士論文加值系統

本論文研究乃在鍺基板上用原子層磊晶技術(Atomic Layer Epitaxy, ALE)法成長砷化鎵層為成核層(Nucleation layer)。實驗結果顯示當成長溫度過低時(415℃)，因TMGa裂解率偏低，導致表面會呈現三角形的缺陷；當磊晶溫度在420℃下成長10對鎵/砷磊晶層將使表面粗糙度降至1.22nm，也能改善磊晶品質(15arcsec)。根據AES分析結果可知當成長溫度為420℃時所成長砷化鎵/鍺異質結構不會產生內部擴散的問題。於鎵與砷層間增加適當吹氣時間(20秒)也可增加砷化鎵/鍺異質結構磊晶品質，吹氣時間太長會導致已經成長上去砷原子自表面脫附，進而使砷化銦鎵/鍺磊晶品質變差。此研究成果證實在低溫成長條件下使用原子磊晶技術法成長砷化鎵磊晶層於Ge基板上，可降低砷、鎵、鍺原子擴散及平坦表面，將有助於取代傳統磷化銦鎵的使用。

GaAs epitaxy, as nucleation layer, is grown on Ge substrate using ALE technique (Atomic Layer Epitaxy). According our study, triangle defects are formed on the surface of (In)GaAs/Ge due to lower decomposition rate of TMGa at low growth temperature (415°C). For ALE technique, the multilayer consisted of 10 pairs of Ga and As layers can improve epitaxial quality (15 arcsec) and surface morphology (1.22nm) of (In)GaAs/Ge heterostructure at 420°C. The growth temperature of 420°C is also adopted to suppress unwanted interdiffusion during (In)GaAs/Ge heterostructure growth. Moreover, long purge time (＞20sec) results arsenic desorption from the surface of ALE-GaAs epitaxy and affects epitaxial quality during InGaAs/GaAs/Ge heterostructure growth. It is demonstrated that GaAs nucleation layer grown on Ge substrate using ALE technique has great potential to replace InGaP layer of traditional III-V solar cell for suppressing unwanted interdiffusion and producing smooth surface morphology.

中文摘要 ……………………………………………………………… ii
英文摘要 ……………………………………………………………… iii
誌謝 ……………………………………………………………… iv
目錄 ……………………………………………………………… vi
圖表目錄 ……………………………………………………………… viii
一、 緒論(Introduction)……………………………………… 1
二、 研究內容與方法…………………………………………… 6
2.1 傳統InGaP/GaAs/Ge三接面太陽能電池 (triple-junction solar cell)…… 6
2.2 Spectrol–Lab( SPL)的專利權問題………………………… 8
2.3 直接成長GaAs磊晶層於Ge基板……… 8
2.3.1 使用不同角度Ge基板以減少APDs的產生……………… 9
2.3.2 改變磊晶速率(Growth Rate) 以減少APDs的產生……… 9
2.3.3 成長As pre-layer為成核層 10
2.3.4 V/III比 10
2.3.5 改變長晶溫度(growth temperature)及二階段段式長晶溫度(Two-step growth temperature)…… 11
2.3.6 GaAs/Ge基板間Ge、As、Ga原子相互擴散 12
2.3.7 原子層磊晶法(ALE) 13
三、 實驗方法與步驟………………………………………… 24
3.1 有機金屬化學氣相沉積系統介紹………………………… 25
3.1.1 氣體輸送系統………………………………………… 26
3.1.2 反應腔體與溫度控制系統 27
3.1.3 廢氣處理系統(scrubber) 27
3.2 金屬有機化學氣相沉積(MOVPE)之磊晶機制 28
3.2.1 熱力學(thermodynamics) 28
3.2.2 動力學(kinetics) 29
3.2.3 流體力學(hydrodynamics)以及質量傳輸(mass transport)理論 30
3.3 有機金屬原料特性與基板的選擇 31
3.4 磊晶的實驗條件 33
3.5 量測儀器介紹及原理 34
3.5.1 有Nomarski功能的金相顯微鏡 34
3.5.2 原子力顯微鏡(AFM) 34
3.5.3 X光雙單晶繞射分析(XRD) 35
3.5.4 光致螢光分析儀(Photoluminescence) 36
3.5.5 電化學參雜濃度量測儀(ECV) 36
3.5.6 掃描式電子顯微鏡(SEM) 37
3.5.7 歐傑電子儀器原理 38
四、 實驗結果與討論…………………………………………… 48
4.1 調整(In)GaAs on Ge 參數-調變ALE溫度、Pair數、purge 時間………… 48
4.1.1 調變ALE溫度觀察OM及AFM的量測結果……………… 48
4.1.2 調變ALE溫度XRD 及PL量測分析 50
4.1.3 調變ALE溫度ECV 及AES分析 50
4.2 調變ALE GaAs layer不同的pair數 51
4.2.1 改變ALE GaAs layer不同的pair數對XRD量測分析 52
4.2.2 改變ALE GaAs layer不同的pair數對XRD量測分析 53
4.3 改變ALE GaAs layer purge 的時間 54
4.3.1 改變ALE GaAs layer purge time觀察OM及AFM的量測結果 54
4.3.2 改變ALE GaAs layer purge 的時間對XRD量測分析 55
五、 結論………………………………………………………… 72
參考文獻 ……………………………………………………………… 73
附錄一 ……………………………………………………………… 76

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