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Abstract (in chinese) i
Abstract (in english) iii
Acknowledgement vi
Abbreviation vii
Contents x
Table Captions xiii
Figure Captions xiv
Chapter 1 Introduction 1
1-1 The review of the solid-state white light emitting diodes (WLEDs) 1
1-2 The review of the organic-based memory devices (OMDs) 1
1-3 Organization of this dissertation 3
Chapter 2 Hybrid light-emitting diodes using quantum dots 6
2-1 CdSe/ZnS core/ shell quantum dots (QDs) 6
2-2 Hybridization of CdSe/ZnS quantum dots on InGaN light-emitting diodes for color-conversion 7
2-2.1 Motivation 7
2-2.2 Experimental details 9
2-2.3 Electrical and optical properties of LED 10
2-2.4 Summary 13
2-3 White light generation from 2,3-dibutoxy-1,4-poly(phenylene vinylene)-CdSe/ZnS quantum dot–InGaN/GaN quantum well dual hybrid light-emitting diodes 14
2-3.1 Motivation 14
2-3.2 Experimental details 15
2-3.3 Electrical and optical properties of LED 16
2-3.4 Summary 19
Chapter 3 Resistive memory devices without the quantum dots 34
3-1 Theory of the memory property of the polymer switching devices 34
3-2 Bistable resistive switching characteristics of poly(2-hydroxyethyl methacrylate) (PHEMA) thin film memory devices 35
3-2.1 Motivation 35
3-2.2 Experimental details 36
3-2.3 Surface morphology and FTIR spectra of PHEMA film 37
3-2.4 Memory mechanism analysis 37
3-2.5 Memory property analysis 41
3-2.6 Summary 42
3-3 Bistable resistive switching using poly(methyl methacrylate) (PMMA) films for nonvolatile memory applications 43
3-3.1 Motivation 43
3-3.2 Experimental details 44
3-3.3 Surface Morphology and FTIR spectra of PMMA 44
3-3.4 Memory mechanism analysis 45
3-3.5 Memory property analysis 49
3-3.6 Summary 49
Chapter 4 Nonvolatile memory thin film transistor without the quantum dots 66
4-1 Hysteresis and memory mechanisms of the conventional OTFTs 66
4-2 Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer multilayer dielectric 67
4-2.1 Motivation 67
4-2.2 Experimental details 68
4-2.3 FTIR spectra of the dielectric layers 69
4-2.4 Electrical characteristic analysis of the memory devices 70
4-2.5 Memory mechanisms of the memory devices 72
4-2.6 Memory properties of the memory devices 73
4-2.7 Summary 75
Chapter 5 Nonvolatile memory thin film transistor with the quantum dots 87
5-1 Nanofloating memory devices 87
5-2 Performance Improvement of Nonvolatile Memory Thin Film Transistors with CdSe/ ZnS Quantum Dot-PMMA Composite layer by Surface Treatments 88
5-2.1 Motivation 88
5-2.2 Experimental details 89
5-2.3 Surface Morphology and contact angles of the QD-PMMA composite layer 90
5-2.4 XRD spectra of the pentacene 91
5-2.5 Electrical characteristics of the memory devices 93
5-2.6 Memory mechanism analysis 94
5-2.7 Memory property analysis 96
5-2.8 Summary 98
Chapter 6 Conclusion and Future Prospect 108
6-1 Conclusion 108
6-2 Future Prospect 110
References 112
Publication List and vita 123
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