臺灣博碩士論文加值系統

氮化物半導體中藍光/綠光多重量子井(MQW)發光二極體(LEDs)的研究已經被商業化量產，從微觀熱力學的觀點看材料的微觀結構和元件特性之間的重要是不容置疑的。在實驗中，我們有系統的分析氮化鎵多重量子井結構含有不同莫耳氮化銦含量發光二極體(LEDs)的德拜行為，其中氮化銦含量包含了0.18、0.02、0.01和0.005。我們量測了變溫的光激發螢光光譜(PL)、電激發螢光光譜(EL)、電壓電流特性等實驗。根據連續模型結果分析，我們將不同多重量子井發光二極體擬合成Universal Bloch-Grueneisen curve 結果符合德拜溫度理論。
不論是變溫的半高寬擬合或變溫的位移擬合在聲子比熱貢獻都是一致的。

Major developments in nitride-based semiconductors have led to the commercial production of blue/green multiple-quantum-well (MQW) light-emitting diodes (LEDs). Based on the microscopic thermodynamics, the importance of an alternative perspective on the correlation between the material microstuctures and the device characteristics is incontrovertible. In this work, we systematically analyzed the Debye behaviors of LEDs with different mole fractions of InN in the InGaN/GaN MQB structures, including 0.18, 0.02, 0.01, and 0.005. The photoluminescence spectra and electroluminescence spectra and current-voltage characteristics were measured over a broad range of temperatures. According to the continuum model, the Debye temperature were obtained for the LEDs with different MQBs by fitting the universal Bloch-Grueneisen curve. The specific heat contributed by the acoustic phonons were considerable agreement with the temperature-dependent line broadenings.

目錄
指導教授推薦書
口試委員會審定書
授權書
誌謝…… iv
中文摘要 v
Abstract…. vi
目錄……. vii
圖目錄….. ix
第一章 緒論 - 1 -
1.1發光二極體之發展 - 1 -
1.2氮化物發光二極體的歷史 - 2 -
1.3研究動機 - 3 -
1.4論文架構與章節安排 - 4 -
第二章 文獻回顧與基本原理 - 5 -
2.1二極體的原理 - 5 -
2.2氮化鎵發光二極體原理 - 7 -
2.3基本的比熱理論 - 10 -
2.4 Debye 比熱理論 (Debye’s theory of specific heat) - 12 -
第三章 樣品及量測系統 - 16 -
3.1 樣品 - 16 -
3.2 量測系統介紹 - 17 -
第四章 實驗結果與討論 - 26 -
4.1 光激發螢光光譜 (Photoluminescence, PL) 分析 - 26 -
4.2 電激發螢光光譜 (Electroluminescence, EL) 分析 - 28 -
4.3電流-電壓曲線 (current-voltage curve) 分析 - 29 -
4.4 氮化銦鎵/氮化鎵發光二極體之德拜溫度 - 29 -
4.5 Universal Bloch-Grueneisen curve - 33 -
第五章 結論 - 52 -
參考文獻 - 53 -

圖目錄
圖2.1 (a)P型與N型半導體結合時在未受偏壓的情況； (b)當接上順向偏壓的時候，使電子及電洞更容易跨過空乏區。[14] - 14 -
圖2.2 (a)單異質結構；(b)雙異質結構；(c)量子井結構。[16] - 15 -
圖3.1 MOCVD系統示意圖 [19] - 20 -
圖3.2 氮化銦鎵/氮化鎵多重量子井發光二極體示意圖 - 21 -
圖3.3 光激發螢光示意圖。[19] - 22 -
圖3.4 光激螢光光譜系統架構。 - 23 -
圖3.5 (a)單色分光儀的內部構造，一個寬波長入射到光柵上，光柵角度的不同以達到不同波長對應不同的角度。(b)光柵放大圖。 [19] - 24 -
圖3.6 電激發螢光系統架構圖 - 25 -
圖4.1具氮化銦鎵/氮化鎵多重量子阻障層(In0.01Ga0.99N/GaN)氮化銦鎵/氮化鎵發光二極體之PL光譜圖 - 34 -
圖4.2具氮化銦鎵/氮化鎵多重量子阻障層(In0.02Ga0.98N/GaN)氮化銦鎵/氮化鎵發光二極體之PL光譜圖 - 35 -
圖4.3具氮化銦鎵/氮化鎵多重量子阻障層(In0.005Ga0.995N/GaN)氮化銦鎵/氮化鎵發光二極體之PL光譜圖 - 36 -
圖4.4具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下PL光譜圖比較圖- 37 -
圖4.5具氮化銦鎵/氮化鎵多重量子阻障層(In0.01Ga0.99N/GaN)氮化銦鎵/氮化鎵發光二極體之EL光譜圖 - 38 -
圖4.6具氮化銦鎵/氮化鎵多重量子阻障層(In0.02Ga0.98N/GaN)氮化銦鎵/氮化鎵發光二極體之EL光譜圖 - 39 -
圖4.7具氮化銦鎵/氮化鎵多重量子阻障層(In0.005Ga0.995N/GaN)氮化銦鎵/氮化鎵發光二極體之EL光譜圖- 40 -
圖4.8具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下EL光譜圖比較圖 - 41 -
圖4.9 具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下電壓-電流比較圖 - 42 -
圖4.10 具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下其PL光譜半高寬擬合之Debye模型 - 43 -
圖4.11具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下其PL光譜半高寬擬合之Debye模型(微觀圖) - 44 -
圖4.12具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下其EL光譜半高寬擬合之Debye模型 - 45 -
圖4.13具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下其EL光譜半高寬擬合之Debye模型(微觀圖) - 46 -
圖4.14具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下電壓-電流擬合之Debye模型 - 47 -
圖4.15具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下電壓-電流擬合之Debye模型(微觀圖) - 48 -
圖4.16 具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下PL光譜半高寬的Universal Bloch-Grueneisen curve - 49 -
圖4.17具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下EL光譜半高寬的Universal Bloch-Grueneisen curve - 50 -
圖4.18具氮化銦鎵/氮化鎵多重量子阻障層不同銦含量之氮化銦鎵/氮化鎵發光二極體在連續溫度下電壓-電流的Universal Bloch-Grueneisen curve - 51 -

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