臺灣博碩士論文加值系統

本論文介紹一種新的架構，搭配左右手傳輸線方式，設計和實現雙頻帶E-pHEMTs Doherty 功率放大器。在用左右手傳輸線的架構取代傳統用於 波長傳輸線的地方。比起傳統T型網絡或雙頻耦合線，左右手傳輸線有著較簡潔的電路架構。
不單是傳輸線部分，在功率分配器和單元功率放大器上也需要做雙頻帶的設計。左右手傳輸線和其餘部分合成雙頻帶Doherty功率放大器操作於0.85和1.9GHz上。本論文分別使用表面附著元件和低溫共燒陶瓷作為匹配網絡和左右手實現的部分。模擬結果在雙頻帶上可得到功率附加效益分別為52.7%和35.7%。而在功率退回區也可以達到35%的功率附加效益。而且在兩頻帶上也分別有10dB和6dB的增益量。在0.85和1.9GHz上平均也可以達到28dBm的輸出功率。

This thesis presents a new design implementation and experimental results of a dual-band E-pHEMTs Doherty power amplifier (DPA) using composite right/left-handed transmission line (CRLH-TL). The transmission line incorporating CRLH-TL is designed to replace those realized by conventional transmission lines. Compared to T-shape network or dual-band coupled line, the proposed CRLH-TL DPA has more compact circuit structure.
In addition to the transmission line, the power divider and the PA unit cell also shall be in the dual-band operation. The proposed CRLH-TL is applied to implement a dual-band DPA for the frequency bands at 0.85 and 1.9 GHz. This thesis uses both surface mount devices and low temperature co-fired ceramic (LTCC) for the matching network and the CRLH-TL implementation. Simulation results for power added efficiency (PAE) are 35.7% and 52.7% for the two frequencies. The PAE at back-off output power exceeds 35% for both bands. The gains at the two frequencies are 10dB and 6.6dB, respectively. The output power can be achieved at average of 28dBm at both 0.85 and 1.9GHz.

第1章 1
1.1 動機 1
1.2 文獻回顧 3
1.3 增強型假型高速電子移動電晶體(E-pHEMT) 6
1.4 環氧玻璃佈層壓板(FR4) 7
1.5 低溫共燒陶瓷技術 8
第2章 10
2.1 小訊號放大器理論[21] 10
2.2 負載線與負載拉移理論[22] 13
第3章 20
3.1 Doherty功率放大器 [20] 20
3.2 寬頻功率分配器[25] 23
3.3 左右手傳輸線理論[30] 27
第4章 32
4.1 介紹 32
4.2 雙頻Doherty放大器設計與模擬 33
4.2.1 決定功率放大器所需輸出功率和電晶體選取 34
4.2.2 決定功率放大器所需偏壓和直流消耗功率 35
4.2.3 負載拉移模擬決定匹配網絡 36
4.2.4 穩定度測試 41
4.3 左右手傳輸線設計 42
4.4 寬頻功率分配器設計 44
4.5 雙頻Doherty功率放大器 45
4.6 雙頻Doherty功率放大器模擬結果 49
4.6.1 使用SMD元件實現電路設計 49
4.6.2 低溫共燒陶瓷設計被動元件網絡 52
第5章 57
5.1 量測步驟 57
5.2 被動元件部分量測 57
5.2.1 雙頻功率分配器量測結果 58
5.2.2 雙頻左右手傳輸線量測結果 59
5.3 主動元件部分量測結果 61
5.3.1 主動元件量測設置 61
5.3.2 單位雙頻帶傳輸線匹配功率放大器 64
5.3.3 使用SMD元件匹配之雙頻帶功率放大器 66
5.3.4 雙頻帶Doherty左右手傳輸線功率放大器 71
第6章 77
參考文獻 79

[1]P. Cruz, N. B. Carvalho, and K. Remley, “Designing and testing software de&;#64257;ned radios,” IEEE Microw. Mag., vol. 11, no. 4, pp. 83–94, Jun. 2010.
[2]J. Kang, D. Yu, K. Min, and B. Kim, “A ultra-high PAE Doherty ampli&;#64257;er based on 0.13-μm CMOS process,” IEEE Microw. WirelessCompon. Lett., vol. 16, no. 9, pp. 505–507, Sep. 2006.
[3]A. Grebennikov and J. Wong, “A dual-band parallel Doherty power ampli&;#64257;er for wireless applications,” IEEE Trans. Microwave Theory Tech., vol. PP, no. 99, pp. 1–9, 2012.
[4]C. F. Campbell, K. Tran, M.-Y Kao, and S. Nayak, “A K-band 5 W Doherty ampli&;#64257;er MMIC utilizing GaN 0.15μm SiC HEMT technology,” in Proc. IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS), Oct. 2012, pp. 1–4.
[5]K. Bathich, D. Gruner, and G. Boeck, “Analysis and design of dualband GaN HEMT based Doherty ampli&;#64257;er,” Proc. 6th European Microwave Integrated Circuits Conf., Manchester, UK, Oct. 2011,pp. 248–251
[6]W. Chen, S. A. Bassam, L. Xiang, L. Yucheng, K. Rawat, M. Helaoui, F. M. Ghannouchi, and F. Zhenghe, “Design and linearization of concurrent dual-band Doherty power ampli&;#64257;er with frequency-dependent power ranges,” IEEE Trans. Microw. Theory and Tech., vol. 59, no. 10, pp. 2537–2546, Oct. 2011.
[7]K. Rawat, and F. M. Ghannouchi, “Design methodology for dual-band Doherty power amplifier with performance enhancement using dual-band offset lines,” IEEE Tran. Ind. Electron., vol.59, no. 12, pp. 4831-4842, Dec. 2011.
[8]P. Saad, P. Colantonio, L. Piazzon, F. Giannini, K. Andersson, and C. Fager, “Design of a concurrent dual-band 1.8–2.4 GHz GaN-HEMT Doherty power ampli&;#64257;er,” IEEE Trans. Microw. Theory Tech., vol. 60,no. 6, pt. 2, pp. 1840–1849, Jun. 2012.
[9]X. Li, W. Chen, Z. Lu, Z. Feng, Y. Chen, and F.M. Ghannouchi, “Design of dual-band multi-way Doherty power ampli&;#64257;ers,” 2012 IEEE MTT-S International Microwave Symposium (IMS), Montreal, Canada, pp. 1-3, Jun. 2012.
[10]K. Bathich, A. Z. Markos, and G. Boeck, “Frequency response analysis and bandwidth extension of the Doherty,” IEEE Trans. Microw. Theory Tech., vol. 59, no. 4, pp. 934–944, Apr. 2011.
[11]S. Zhao, Z. Tang, Y. Wu, L. Bao,“ Linearity improved Doherty power amplifier using coupled-lines and a capacitive load”, IEEE Microw. Wireless Compon. Letters, v.21,n.4, pp. 221-223, April 2011.
[12]X. Li, W. Chen, Z. Zhang, Z. Feng, X. Tang, and K. Mouthaan, “A concurrent dual-band Doherty power ampli&;#64257;er,” in 2010 Asia–Paci&;#64257;c Microw. Conf., Yokohama, Japan, Dec. 2010, pp. 654–657.
[13]S. H. Ji, S. K. Eun, C. S. Cho, J. W. Lee, and J. Kim, “Linearity improved Doherty power ampli&;#64257;er using composite right/left-handed transmission lines,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 8, pp. 533–535, Aug. 2008.
[14]Hsin-Chia Lu, Yen-Liang Kuo, Po-Sheng Huang and Yi-Long Chang, “Dual-band CRLH branch-line coupler in LTCC by lump elements with parasite control,” 2010 IEEE MTT-S International Microwave Symposium (IMS), pp. 393-396, Anaheim, U.S.A., May 2010.
[15]X, Fu, Dylan T. Bespalko, and Slim Boumaiza. “Novel dual-band matching network topology and its application for the design of dual-band Class J power amplifiers.” 2012 IEEE MTT-S International Microwave Symposium (IMS), pp. 1-3, Montreal, QC, Canada, Jun. 2012.
[16]M. R. Ghajar and S. Boumaiza, “Concurrent dual band 2.4/3.5GHz fully integrated power amplifier in 0.13um CMOS technology,” in Proc. 39th European Microwave Conf., pp. 1728-1731, Sept. 2009.
[17]Seung Hun Ji, Gyu Seok Hwang, On Sik Cho, Jae W. Lee, Jaeheung Kim, “836 MHz/1.95GHz dual-band class-E power amplifier using composite right/left-handed transmission lines," Proceedings of the 36th European Microwave Conference, EuMC 2006, pp. 356-359, 2007.
[18]P. Saad, P. Colantonio, J. Moon, L. Piazzon, K. Andersson, B. Kim, and C. Fager, “Concurrent dual-band GaN-HEMT power ampli&;#64257;er at 1.8 GHz and 2.4 GHz,” in 13th Annu. IEEE Wireless Microw. Technol. Conf., pp. 1-5, Apr. 2012.
[19]D. Kalim, A. Fatemi, R. Negra, “Dual-band 1.7GHz/2.5GHz class-E power amplifier in 130nm CMOS technology”,IEEE New Circuits and Systems Conference (NEWCAS), pp. 473-476, Jun. 2012.
[20]P. Lavrador, T. Cunha, P. Cabral, and J. Pedro, “The linearity-ef&;#64257;ciency compromise,” IEEE Microw. Mag., vol. 11, no. 5, pp. 44–58, Aug. 2010.
[21]David M. Pozar, Microwave Engineering, 3rd ed., John Wiley &; Sons, 2005.
[22]S. C. Crips, RF Power Amplifiers for Wireless Applications, Artech House, 1999.
[23]V. Veselago, "The electrodynamics of substances with simultaneously negative values of ε and μ," Soviet Physics Usepekhi, vol. 10, 1968.
[24]Caloz and T. Itoh, Electromagnetic Metamaterials: Transmission Line Theory And Microwave Applications. New York, Wiley, 2004.
[25]S. B. Cohn, "A class of broadband three-port TEM-mode hybrids," IEEE Transactions on Microwave Theory and Techniques, vol. 19, No.2, pp. 110-116, Feb. 1971.
[26]Po-Sheng Huang, Yi-Long Chang, and Hsin-Chia Lu, "A compact broadband quadrature power splitter on LTCC," in 2011 Asia-Pacific Microwave Conference, Melbourne, VIC, 5-8 Dec. 2011, pp. 33-36.
[27]http://www.avagotech.com/pages/en/rf_microwave/transistors/fet/atf-50189/
[28]http://www.acxc.com.tw/
[29]W. H. Doherty, “A new high efficiency power amplifier for modulated waves,” Proc. IRE, vol. 24, pp. 1163–1182, Sept. 1936.
[30]A. Lai, C. Caloz, and T. Itoh, “Composite right/left-handed transmission ine metamaterials,” IEEE Microw. Mag., vol. 5, no. 3, pp. 34–50, Sep. 2004.
[31]Y. Imanaka, Multilayered Low Temperature Cofired Ceramics (LTCC) Technology. Springer Verlag, Heidelberg, 2004.