臺灣博碩士論文加值系統

本研究探討在溫度1050℃-1100℃及Ar氣氛下，Si基板上SiO2層的生成及CuO粉末的添加對以熱碳還原GeO2粉生長Ge-Si1-xGexOy及GeO2-Si1-xGexOy核-殼奈米線(底下以奈米線稱之)的影響。無添加CuO粉末時，僅在SiO2/Si基板上生成Ge-Si1-xGexOy奈米線，於Si基板上並無奈米線生成。當添加CuO粉末時，可促進Ge-Si1-xGexOy及GeO2-Si1-xGexOy奈米線在Si基板生長及GeO2-Si1-xGexOy奈米線在SiO2/Si基板生長。這些奈米線是經由VS生長機制生長。目前結果顯示，Si基板的氧化對以熱碳還原GeO2粉末生長Ge-Si1-xGexOy及GeO2-Si1-xGexOy的成長扮演著重要角色。在此探討Si及SiO2基板上，在 Si1-xGexOy奈米線核心生長Ge或GeO2結晶的機制。
另外，在溫度1100℃以熱碳還原GeO2/CuO粉末，於Si基板上除了Ge-Si1-xGexOy及GeO2-Si1-xGexOy奈米線生成外，還有繩狀奈米線、中空管及鏈條線形成，其化學組成為Si、Ge及O。中空管(tube)及鏈條線也是由許多Si1-xGexOy奈米線組成。繩狀奈米線、中空管及鏈條線的生長是以CuSiGe和SiGe催化的VLS機制控制，其中Ge、Si及Cu是由氣相提供。對於中空管及鏈條線其Si1-xGexOy奈米線是在液滴下半球表面成核成長，成核點不包含下球面的中心區域，所以當Si1-xGexOy奈米線不斷的生長時，液滴被抬起往上移動，形成管狀結構。
鏈條線其直徑粗細呈現週期性的變化，生長過程可以根據反饋機制(feedback mechanism)的週期性不穩性來解釋。隨著鏈條線的成長，最後會轉變成為中空管。對較大直徑的線，其週期不穩定性的消失，可歸因於Gibbs-Thomson效應使得在氣-液界面的氣相過飽和度減少。在本研究中所生長之中空管，可以歸類為擁有較大波長的鏈條線。

The effects of a grown SiO2 layer on the Si substrate and the CuO additive in GeO2 powders on the enhanced growth of Ge-Si1-xGexOy and GeO2-Si1-xGexOy core-shell nanowires via carbothermal reduction at 1050-1100℃ in flowing Ar were studied. Without adding CuO into GeO2 powders only Ge-Si1-xGexOy nanowires were grown on the SiO2/Si substrate, while no nanowires could be grown on the Si substrate. Adding CuO into GeO2 powders enhanced the growth of GeO2-Si1-xGexOy and Ge-Si1-xGexOy nanowires on the Si substrate as well as that of GeO2-Si1-xGexOy nanowires on the SiO2/Si substrate. The growth of nanowires follows the vapor-solid process. The present studies reveal that the oxidation of the Si substrate plays an important role in enhancing the growth of Ge-Si1-xGexOy and GeO2-Si1-xGexOy nanowires via carbothermal reduction of GeO2 powders. The mechanisms for precipitation of Ge and GeO2 cores in the Si1-xGexOy nanowires on Si and SiO2 substrates are discussed, respectively.
Upon carbothermal reduction of GeO2/CuO powders at 1100℃, not only the Ge-Si1-xGexOy and GeO2-Si1-xGexOy nanowires but also the cord-like nanowires, tubes, and chain-like wires with the chemical compositions of Si, Ge, and O were grown on the Si substrate. The tubes and chain-like wires are also composed of many Si1-xGexOy nanowires. The growth of cord-like nanowires, tubes, and chain-like wires is govern by the CuSiGe- and SiGe-catalyzed vapor-liquid-solid mechanisms, where Ge, Si, and Cu are fed from the vapor phase. For the tubes and chain-like wires the nucleation and growth of Si1-xGexOy nanowires occur on the lower surface of the droplet except the central region. As growth continues the nanowires exert a force to lift the droplet upward, forming a tubular structure.
The diameters of the chain-like wires are periodically modulated. Their growth may be explained in terms of the periodic instability using the feedback mechanism. As the chain-like wire grows up, it can eventually grow into a microtube without periodic instability. The suppression of the periodic instability for the wires with larger diameter may be attributed to the decrease of the vapor supersaturation at the vapor-liquid interface due to the Gibbs-Thomson effect. In the present study, the tube can be specified as the chain-like wire with a very large wavelength.

本文目錄
中文摘要----------------------------------------------------------------------I
英文摘要---------------------------------------------------------------------II
誌謝感言--------------------------------------------------------------------III
本文目錄----------------------------------------------------------------------V
圖目錄---------------------------------------------------------------------VIII
第一章 奈米材料簡介---------------------------------------------------------1
1.1 前言---------------------------------------------------------------------1
1.2 奈米效應------------------------------------------------------------------2
1.2.1 奈米表面效------------------------------------------------------------2
1.2.2 量子尺寸效應----------------------------------------------------------3
1.2.3 量子穿隧效應--------------------------------------------------------4
1.3 一維奈米材料------------------------------------------------------------5
第二章 基本理論--------------------------------------------------------------8
2.1 文獻回顧----------------------------------------------------------------8
2.1.1 奈米線合成技術------------------------------------------------------8
Solvothermal法---------------------------------------------------------8
雷射蒸鍍(laser ablation)------------------------------------------------------9
化學氣相沉積(chemical vapor deposition)---------------------------------------9
熱蒸鍍(thermal evaporation)--------------------------------------------------10
熱碳還原(carbothermal reduction)---------------------------------------------12
模板輔助(template-assisted)--------------------------------------------------12
溶膠-凝膠法(sol-gel) --------------------------------------------------------13
2.1.2 奈米線生長機制-----------------------------------------------------14
Vapor-Liquid-Solid (VLS) ---------------------------------------------14
Oxide-Assisted Growth (OAG) ------------------------------------------16
Vapor-Solid (VS) -----------------------------------------------------17
Solution-Liquid-Solid ------------------------------------------------18
2.1.3 鏈條線生長機制-----------------------------------------------------19
2.2 儀器原理---------------------------------------------------------------20
2.2.1 掃瞄式電子顯微鏡---------------------------------------------------20
2.2.2 掠角X光繞射儀------------------------------------------------------21
2.2.3 穿透式電子顯微鏡---------------------------------------------------22
2.2.4 X光能量散佈分析儀-------------------------------------------------23
2.2.5 光子激發光譜儀分析-------------------------------------------------23
2.2.6 拉曼光譜分析儀-----------------------------------------------------25
2.3 研究動機 --------------------------------------------------------------25
第三章 實驗步驟與方法-------------------------------------------------------28
3.1 實驗設備及流程 --------------------------------------------------------28
3.2 基板清洗與TEM試片製備--------------------------------------------------29
3.2.1 基板清洗 ---------------------------------------------------------29
3.2.2 TEM試片製備-------------------------------------------------------29
3.3 實驗分析 --------------------------------------------------------------29
3.3.1 掃瞄式電子顯微鏡分析-----------------------------------------------29
3.3.2 低掠角X光繞射分析--------------------------------------------------30
3.3.3 穿透式電子顯微鏡分析-----------------------------------------------30
3.3.4 微光致螢光/拉曼光譜儀分析----------------------------------------------30
第四章 結果與討論-----------------------------------------------------------31
1. 核-殼奈米線(core-shell nanowire)-----------------------------------------31
1.1 熱碳還原GeO2粉末在Si及SiO2基板上生長奈米線-----------------------------31
1.2 熱碳還原GeO2/CuO粉末在Si及SiO2基板上生長奈米線-------------------------32
1.3 奈米線生長機制探討 ----------------------------------------------------33
1.3.1 以GeO2/C粉末在SiO2基板上生長奈米線---------------------------------33
1.3.2 添加CuO於GeO2/C粉末中於Si和SiO2基板上生長奈米線--------------------34
1.4 Raman及PL -------------------------------------------------------------35
1.5 製程參數對奈米線生長的影響---------------------------------------------36
1.5.1 生長溫度-----------------------------------------------------------36
1.5.2 生長時間-----------------------------------------------------------37
1.5.3 氬氣流量 ----------------------------------------------------------38
1.5.4 混合粉末中碳含量---------------------------------------------------39
1.5.5 混合粉末中CuO含量--------------------------------------------------40
1.5.6 氧分壓-----------------------------------------------------------------41
2. Si1-xGexOy鏈條線、管及繩狀奈米線的生長-----------------------------------42
2.1 繩狀奈米線(cord-like nanowires)----------------------------------------43
2.2 中空管型(tube)----------------------- ---------------------------------43
2.3 鏈條結構(chain-like structure) ----------------------------------------43
2.4 Si1-xGexOy結構生長機制探討---------------------------------------------44
2.4.1 繩狀奈米線(cord-like nanowires)------------------------------------44
2.4.2 鏈條線及中空管(chain-like wires、tubes)----------------------------45
2.4.3 氧分壓的影響 ------------------------------------------------------46
第五章 結論-----------------------------------------------------------------48
參考文獻---------------------------------------------------------------------50

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