臺灣博碩士論文加值系統

在近幾年來,個人無線通信系統一直傾向SOC（單晶整合系統）技術方面成長，並且因為個人無線通信系統顯著的成長，使得SOC（單晶整合系統）技術的需求更加顯著。現今，絕大多數的通信系統元件已經可以在CMOS技術中實現。也為了這個原因, 我們急迫的想要整合個人通信系統在一個晶片之中,而功率放大器則是這方面的關鍵。然而,設計和完成一個CMOS 功率放大器就 CMOS特性中的許多劣勢而言是很困難的。目前, 射頻功率放大器都使用如GaAs、HBT、LDMOS和BiCMOS 的技術完成，但是為了單一晶片整合的目標，設計一個CMOS射頻放大器是必要的。
在這個設計中我們使用CMOS製程去完成一個單極開關模式E類功率放大器,以期能夠達到高效率和低功率損耗的目標。 這個功率放大器設計，參照由電機和電子工程師協會所制定之802.11b 標準。其工作頻率為2.45GHz用於工業、科學的, 和醫學的頻段 (在IEEE 802.11b 標準中, 頻率範圍從 2.4GHz 到 2.483GHz。) ，並且其輸出功率需大於23dBm。本設計使用了一個高效率E類放大器架構，並且使用一個單晶模型應用於台積電 0.25um CMOS製程。 模擬則使用ADS 系統。進行電路設計, 並且在佈局完成之後模擬有50.6% 的 PAE ,而且能產生24.1dBm的輸出功率到一個50Ω負載裡。

For the last few years, the personal wireless communications system has developed intensively the SOC (system on chip) technologies, and it is becoming clearer that the remarkable amount of growth in the SOC system for the personal wireless communications applications. Now, the overwhelming majority of part element of communication system is implemented in CMOS technology. For this reason, to integrate the whole personal communications system in a chip is very important, and the power amplifier is the key in the integration design. However, the design and implementation a CMOS power amplifier is very difficult due to the characteristics of CMOS. Presently, the RF power amplifiers are mainly implemented in GaAs, HBT, LDMOS, and BiCMOS technologies, but for the SOC, the design is to need for a COMS RF power amplifier. This design is used with a class-E single-end switching power amplifier, which can achieve high efficiencies and low power consumptions.
The power amplifier was designed for the wireless LAN IEEE 802.11b Standard. The frequency of the PA used in Industrial Scientific and Medical (ISM) band at 2.45GHz (in the IEEE802.11b standard, the frequency range is from 2.4GHz to 2.483GHz), and the output power is greater than 23dBm. The PA design utilized high-efficiency Class-E amplifier structure, and the structure used a single-end model in a 0.25um CMOS process. The overall simulation used ADS (Advance design system) tool. To do design The post-layout simulations indicated a PAE of 50.6% in the PA, and which could generate 24.1dBm of output power into a 50Ω load.

CHINESE ABSTRACT.............................................IV
ENGLISH ABSTRACT..............................................V
ACKNOWLEDGMENTS..............................................VI
TABLE OF CONTENTS...........................................VII
LIST OF FIGURES..............................................XI
LIST OF TABLES.............................................XIII
Chapter 1 Introduction........................................1
1.1 Architecture of a personal wireless communication system 1
1.2 The key of SOC............................................3
1.3 Organization of Thesis....................................4
Chapter 2 Noise...............................................7
2.1 Basic introduction........................................7
2.2 Statistical Characteristics of Noise......................7
2.3 Noise Spectrum............................................8
2.4 Amplitude Distribution...................................10
2.5 Type of Noise............................................11
2.5.1 Thermal Noise..........................................11
2.5.2 Flicker Noise..........................................13
2.5.3 RF thermal Noise model.................................16
2.6 Conclusion...............................................18
Chapter 3 Basics On Power Amplifier..........................19
3.1 Basic introduction of power amplifier....................19
3.2 General considerations...................................20
3.3 Linear and nonlinear PA..................................23
3.4 Classification of power amplifiers.......................24
3.4.1 Class-A................................................24
3.4.2 Class-B................................................26
3.4.3 Class-C................................................29
3.4.4 Class-AB...............................................31
3.4.5 Class-D................................................31
3.4.6 Class-E................................................32
3.4.7 Class-F................................................34
3.5 Conclusion...............................................36
Chapter 4 PRINCIPLE OF CLASS-E POWER AMPLIFIER...............38
4.1 Introduction.............................................38
4.2 Amplifier Using Active Devices switch....................39
4.3 Description of a Simple Model of the Class-E Power Amplifier....................................................41
Chapter 5 Implementation.....................................49
5.1 Specification............................................49
5.2 Circuitry and Layout.....................................50
5.3 Simulation...............................................52
5.3.1 Voltage versus current of active switch component .....52
5.3.2 Output spectrum .......................................53
5.3.3 IP3....................................................54
5.3.4 stability..............................................55
5.3.5 PAE....................................................56
5.3.6 The relationship of output power, efficiency, and input power........................................................57
5.3.7 The comparison sheet for the harmonic..................59
5.4 A comparison sheet for the class-E papers................60
Chapter 6 Conclusion.........................................61
6.1 Conclusion...............................................61
6.2 Future work..............................................62
Reference....................................................63

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