臺灣博碩士論文加值系統

本論文主要探討銦摻雜對p型氮化鎵薄膜的影響，針對含銦p型氮化鎵薄膜以及純鎂p型氮化鎵薄膜作一系列的研究。不論是純鎂p型氮化鎵薄膜或是含銦p型氮化鎵薄膜，其冷激光光譜均由一較寬2.78eV頻譜主導。從光學顯微鏡及電流電壓特性曲線來看，銦摻雜後的p型氮化鎵薄膜不但表面變得比較平坦，而且具有比較良好的歐姆特性。除此之外，由室溫霍爾電性量測結果，發現含銦p型氮化鎵薄膜的電洞濃度均比純鎂p型氮化鎵薄膜的電洞濃度高，尤其當鎂流率在250scccm時，含銦p型氮化鎵薄膜的電洞濃度可達7.32´1017cm-3。由變溫霍爾實驗數據顯示，含銦p型氮化鎵薄膜電洞濃度的提昇主要與受子活化能降低、補償率下降以及有效淺階受子濃度增加有關，與固態鎂原子的融入率無直接相關。

We have investigated the isoelecetronic indium doping effects of Indium on p-type GaN films. Two sets of samples were prepared：one is pure Mg-doped GaN film, the other is Mg-In codoped GaN film. Whether Indium is doped or not, the photoluminescence spectra of as-grown p-type GaN films all show one broad emission peak around 2.78eV, which indicating Mg-rich in all of our p-type GaN samples. Besides, it is interesting to note that the hole concentration of Mg-In codoped GaN is higher than that of Mg-doped one based on room-temperature Hall measurement data. The optimum hole concentration is 7.32´1017cm-3. We believe the increase of the hole concentration in these indium doped p-GaN films can be attributed primarily to the reduction of the acceptor activation energy, the decrease of compensation effects as well as effective incorporation of Mg atom as shallow acceptor, rather than deep impurity, not directly related to the Mg solid concentration in the film.

第一章 序論………………………………………………..…………....1
第二章 量測方法及原理………………………………………………..8
2-1 霍爾效應…………………………………………….…..…..8
2-1.1 Hall bar structure……………….………….…….8
2-1.2 van der Pauw理論………………………………..….11
2-2 變溫霍爾量測理論………………………………….……..13
2-3 冷激光原理…………………………………..………...…..16
2-4 二次離子質譜儀原理………………………………….…..19
第三章 實驗步驟……………………..……..……………………....21
3-1 樣品製備…………………………………..………..……...21
3-2 實驗流程…………………………………..………..……...23
3-2.1 表面處理過程……………………..………..………24
3-2.2 熱退火處理過程…………….………..………...…..25
3-2.3 van der Pauw四方形試片製作……………………...25
3-2.4 蒸鍍過程……………………..………..……………26
3-3 分析儀器……………………..………..…………………...27
3-3.1 霍爾量測系統………..………..……………………27
3-3.2 冷激光量測系統……..………..…………………....27
3-3.3 二次離子質譜儀系統..………..……………………27
3-3.4 I-V電性量測系統…..………..…………………...…29
3-3.5 光學顯微鏡……………..………..…………………29
第四章 實驗結果與討論……………..………………………………..30
4-1 銦摻雜p型氮化鎵薄膜特性分析…………………………30
4-1.1 二次離子質譜儀量測………………………………30
4-1.2 光學顯微鏡表面分析………………………………32
4-1.3 冷激光分析……..……..……………………………34
4-1.4 I-V電性量測分析……..…………………………….36
4-2 銦摻雜p型氮化鎵薄膜之室溫霍爾量測分析…………....38
4-3 銦摻雜p型氮化鎵薄膜之變溫霍爾量測分析…………....43
4-3.1 銦摻雜對p型氮化鎵薄膜活化能之影響………….44
4-3.2銦摻雜對p型氮化鎵薄膜補償率之影響…………..47
第五章 結論………………………………………………..…………..53
參考文獻………………………………………………..…………..…..55

1. H. Amano, I. Akasaki, T. Kozawa, K.Hiramatsu, N. Sawaki, K. Ikeda, and Y. Ishii, J. Lumin. 40-48, 121(1998)
2. H. Amano, M. Kito, K. Hiramatsu, and I. Akaaki, Jpn. J. Appl. Phy. 28, L2112(1989)
3. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 30, L1708(1991)
4. S.Nakamura, N. Iwawa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 31, 1258(1992)
5. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer, Berlin, (1997)
6. U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrihnan, B. Santic, and P. chlotter, Appl. Phys. Lett. 72, 1326(1998)
7. Ishiida A, Matsuda K, Chu S, et al. MAT SCI ENG B-OLID 599, 1-3, 230(1999)
8. Kim KS, Han MS, Yang GM, et al. Appl. Phys. Lett. 77, 1123(2000)
9. Kim KS, Oh CS, Han MS, et al. MRS INTERNET JNSR. 5, 276(2000)
10. Brandt O, Yang H, Kostial H, et al. Appl Phys. Lett. 69, 2707(1996)
11. Yamamoto T, Katayama-Yoshida H. MATER SCI FORUM. 258-2, Part 1-3, 1185(1997)
12. Yamamoto T, Katayama-Yoshida H. J CRYST GROWTH. 190, 532(1998)
13. Morkoc H, Botchkarev A, Salvador A, et al. J CRYST GROWTH. 150, (1-4) 887 Part 2(1995)
14. McMurran J, Todd M, Kouvetakis J, et al. Appl. Phys. Lett. 69(2), 203(1996)
15. Li JZ, Lin JY, Jiang HX, et al. Appl. Phys. Lett. 69(10), 1474(1996)
16. Hiroaki Takeuchi, Masanori hinohara and Kunishige Oe, Jpn. J. Appl. Phys. 25(4),L303 (1986)
17. W. Walukiewicz, Appl. Phys. Lett.54(20), 2009 (1989)
18. A. Uddin and T.G. Andersson, J. Appl. Phys.65(8), 3101 (1989)
19. F. Widmann, B. Daudin, G. Feuillet, N. Pelekanos and J.L. rouvière, Appl. Phys. Lett.73(18), 2642 (1998)
20. Xu-Qiang Shen, Peter Ramvall, Philippe Riblet and Yoshinobu Aoyagi, Jpn. J. Appl. Phys.38, L411 (1999)
21. H. K. Cho, C. S. Kim, Y. K. Hong, Y.-W. Kim, et al., Phys. Stat. Sol.(b)228(1), 231 (2001)
22. Toshiki Makimoto, Kazuhide Kumahura, Nsoki Kobayashi, J. Crystal Growth 221,350 (2000)
23. T. Tanaka, A. Watanabe, H. Amano, et al., Appl. Phys. Lett. 65(5), 593(1994)
24. W. Götz, N. M. Johnson, J. Walker, et al., Appl. Phys. Lett. 68(5), 667 (1996)
25. Peter Kozodoy, Hulil Xing, Steven P. DenBaars, et al., J. Appl. Phys. 87(4), 1832 (2000)
26. A. K. Rice and K. J. Malloy, J. Appl. Phys. 89(5), 1832 (2001)
27. D. Lancefield and H. Eshghi, I. Phys.: Condens. Matter 13, 8939 (2001)
28. L. J. van der Pauw, Phil. Res. Rep. 13,1 (1958)
29. Joseph H. Simmons and Kelly S. Potter: Optical Materials
30. A. H. Kitai: Solid State Luminescence
31. Klaus D. Mielenz: OPTICAL RADIATION MEASUREMENTS, Vol.3
32. Y. Ohba, A. Hatano, Jpn. J. Appl.Phys.33, PL1367 (1994)
33. A. Cros, R. Dimitrov, H. Angerer, O. Ambacher, M. Stutzmann, S. Christiansen, M. Albrecht, H. P. Strunk, J. Crys. Grow. 181, 197 (1997)
34. H.M. Chung, W.C. Chung, Y.C. Pan, C.C. Tsai, M.C. Lee, W.H. Chen, and W.K. Chen, Appl. Phys. Lett.76(7) , 897(2000)
35. Da-Cheng Lu, Chengxin Wang, Hairong Yuan, Xianglin Liu, Xiaohui Wang, J. Cryst. Growth 221, 356(2000)
36. F.Shahedipour, and B.W. Wessels, Appl. Phys. Lett.76, 3011(2000)
37. A.Kasi Viswanath, E.-J. Shin, J.I. LEE, S.Yu, amd D. Kim, J. Appl. Phys.83,2732(1998)
38. M. Ilegems and R. Dingle, J. Appl. Phys.44,4234(1973)
39. H.Amano, M. Kitoh, K. Hiramatsu, and I. Akasaki, J. Electrochem. Soc.137,1639(1990)
40. J.M. Myoung, K.H. Shim, C. Kim, O. Gluschenkov, K. Kim, S. Kim, D.A. Tumbull, and S.G. Bishop, Appl. Phys. Lett.69,2722(1996)
41. H. Amano, M. Kito, K. Hiramatsu and I. Akasiki, Inst. Phys. Conf. Ser.106,725(1990)
42. S. Nakamura, T. Muksi, M. Senoh, Jpn. J. Appl. Phys. Part2,30, L1998(1991)
43. M.A. Resfchikov , G.-C. Yi, and B. W. Wessels, Phys. Rec. B 59,13176(1999)
44. J. Neugebauer and C.G. van der Walle, Mater. Res. Soc. Symp. Proc.395,645(1996)
45. H. Obloh, K.H. Bachem, U. Kafmann, M. Kunzer, M. Maier, A. Remakrishnan, P. Schlotter, J. Cryst. Growth 1951,270(1998)
46. A.K. Rice and K.J. Malloy, J. Appl. Phys.89(5), 2816 (2001)
47. W. Götz, R.S. Kern, C.H. Chen, H. Liu, D.A. Steigerwald, and R.M. Fletcher, Mater. Sci. Eng. B59, 211(1999)
48. E.F. Schubert, Doping in Ⅲ-Ⅴ Semiconductors (Cambridge University Press, Cambridge, 1993)
49. P.P. Debye and E.M. Conwell, Phys. Rev.93, 693(1954)
50. W. Kim, A.E. Botchkarev, A. Salvador, G. Popovidi, H. Tang, and H. Morkoc, J. Appl. Phys. 82, 219 (1997)
51. J. Neugebauer, C.G. Van de Walle, Phys. Rev.B50(11), 8067(1994)
52. Sandip Mazumder, Samuel A. Lowry, J. Cryst. Growth 224, 165(2001)