臺灣博碩士論文加值系統

本研究在(100)矽基板上蒸鍍一層鎳薄膜，在溫度(1000°C)、氬氣流量500sccm、成長時間2小時的狀況下誘發析出矽原子以成長SiOx奈米線。本研究針對鎳膜厚度(5nm～25nm)所析出SiOx奈米線的結構性質和電漿處理過後，電流與電場間的關係來進行研究。從SEM圖中發現，典型SiOx奈米線平均管徑與鎳膜厚度之間呈現幾乎線性的關係。由實驗結果可總結出以下的結論，如果將催化劑鎳膜厚度增大，在成核階段會形成尺寸較大及數量較少的催化劑顆粒，而所析出的SiOx奈米線的直徑也會較大且數量也會較少。由於尖端曲率較小且場發射點較少，因此這些直徑較大且數量較少的SiOx奈米線的場發射電流也會降低。因此，我們必須盡可能使鎳膜厚度縮小，所析出的SiOx奈米線才能獲得不錯的場發射特性。研究發現，雖然典型SiOx奈米線的場發射電流比奈米碳管來得小，但是經過Ar電漿處理後，SiOx奈米線的屏蔽效應會被有效地降低，且頂端的形貌會有所改變，使得電子容易從尖端射出。而經過CF4電漿處理的SiOx奈米線會產生叢集的現象，因而提高SiOx奈米線的表面密度，且其表面呈現凹凸不平的狀態而增加其場發射點。因此，SiOx奈米線經過電漿後處理可以大幅改善其場發射特性，獲得足以與奈米碳管相比擬的場發射特性。這顯示SiOx奈米線具有作為場發射元件的發展潛力，這與學界普遍的看法並不相同。
關鍵字：SiOx奈米線、場發射、觸媒、矽－鎳合金

In this work, a layer of nickel was evaporated onto a (100) silicon substrate to induce the precipitation of silicon at 1000°C for 2 hours in order to grow SiOx nanowires. The thickness of nickel layer was varied to study its effects on the field emission characteristics of SiOx nanowires. As observed from SEM graphs, the average diameter of SiOx nanowires varies almost linearly with the thickness of catalyst Ni layer. It can be concluded that thicker Ni layer produces lager and fewer catalyst balls in the nucleation stage resulting in larger and fewer SiOx nanowires. These larger and fewer SiOx nanowires in turn emit less current due to lower curvature at the tip and lower quantity of emission sites. Therefore, the thickness of Ni layer must be kept to minimum in order to obtain decent field emission characteristics. Even so, the emitted currents from SiOx nanowires are still lower than those emitted from carbon nanotube. It is found in this study that the screening effect of SiOx nanowires can be effectively reduced and the tip can be modified by Ar plasma treatment so that electrons can emit easily from the tips. On the other hand, conglomeration phenomenon of SiOx nanowires is found after CF4 plasma treatment which increases the surface density of SiOx nanowires and the number of emission sites. Hence, the field emission characteristics of SiOx nanowires are enhanced and field emission characteristics comparable to those of carbon nanotubes are achieved after plasma post-treatment. These results clearly manifest the potential of using SiOx nanowire in field emitter applications, and this is quite different to what people might think.
Keywords: SiOx nanowires, field emission, metal-induced precipitation, Si-Ni alloy

封面內頁
簽名頁
授權書．．．．．．．．．．．．．．．．．．．．．．．．．iii
中文摘要．．．．．．．．．．．．．．．．．．．．．．．．iv
英文摘要．．．．．．．．．．．．．．．．．．．．．．．．v
誌謝．．．．．．．．．．．．．．．．．．．．．．．．．．vi
目錄．．．．．．．．．．．．．．．．．．．．．．．．．．vii
圖目錄．．．．．．．．．．．．．．．．．．．．．．．．．x
表目錄．．．．．．．．．．．．．．．．．．．．．．．．．xv

第一章　簡介．．．．．．．．．．．．．．．．．．．．．．1
1.1奈米材料的歷史與簡介．．．．．．．．．．．．．．1
1.2奈米材料的特徵．．．．．．．．．．．．．．．．．4
　　1.2.1表面效應．．．．．．．．．．．．．．．．．4
　　1.2.2小尺寸效應．．．．．．．．．．．．．．．．5
　　1.2.3量子穿隧效應．．．．．．．．．．．．．．．7
1.3奈米材料的應用．．．．．．．．．．．．．．．．．9
　　1.3.1場發電子源．．．．．．．．．．．．．．．．12
　　1.3.2場發射電子源的特性．．．．．．．．．．．．13
1.4研究動機．．．．．．．．．．．．．．．．．．．．14
第二章　文獻回顧．．．．．．．．．．．．．．．．．．．．15
2.1氫氣電漿處理文獻．．．．．．．．．．．．．．．．16
2.2氫氣退火處理文獻．．．．．．．．．．．．．．．．21
第三章　理論與研究方法．．．．．．．．．．．．．．．．．25
3.1電子場發射理論．．．．．．．．．．．．．．．．．25
3.2奈米線的成長機制．．．．．．．．．．．．．．．．28
　　3.2.1 Vapor-Liquid-Solid(VLS)．．．．．．．．．．．29
　　3.2.2氧化輔助生長(Oxide-Assisted Growth, OAG)．．．31
　　3.2.3 Vapor-Solid(VS)．．．．．．．．．．．．．．．33
　　3.2.4 Solution-Liquid-Solid．．．．．．．．．．．．．34
　　3.2.5 Solid-Liquid-Solid(SLS)．．．．．．．．．．．．36
　　3.2.6 Solid-Solid transformation(SS)．．．．．．．．．38
3.3電漿蝕刻機制．．．．．．．．．．．．．．．．．．39
3.4實驗儀器原理．．．．．．．．．．．．．．．．．．40
　　3.4.1熱蒸鍍系統．．．．．．．．．．．．．．．．40
　　3.4.2高溫爐管系統．．．．．．．．．．．．．．．41
　　3.4.3電漿蝕刻系統．．．．．．．．．．．．．．．42
　　3.4.4掃描式電子顯微鏡系統．．．．．．．．．．．45
　　3.4.5能量散佈分析儀系統．．．．．．．．．．．．46
　　3.4.6 FTIR（霍氏轉換紅外光譜儀）的分析．．．．．48
　　3.4.7場發射量測裝置系統．．．．．．．．．．．．49
3.5實驗步驟．．．．．．．．．．．．．．．．．．．．51
　　3.5.1蒸鍍．．．．．．．．．．．．．．．．．．．51
　　3.5.2成長SiOx奈米線．．．．．．．．．．．．．．52
　　3.5.3電漿後處理．．．．．．．．．．．．．．．．53
　　3.5.4電性量測．．．．．．．．．．．．．．．．．53
第四章　實驗結果與討論．．．．．．．．．．．．．．．．．54
4.1典型SiOx奈米線的研究與討論．．．．．．．．．．．54
　　4.1.1掃瞄式電子顯微鏡(SEM)的分析．．．．．．．．54
　　4.1.2電子場發射分析．．．．．．．．．．．．．．61
4.2 Ar電漿後處理對SiOx奈米線的的研究與討論．．．．．64
　　4.2.1掃瞄式電子顯微鏡(SEM)的分析．．．．．．．．64
　　4.2.2穿透式電子顯微鏡(TEM)的分析．．．．．．．．68
　　4.2.3能量散佈分析儀(EDS)的分析．．．．．．．．．69
　　4.2.4霍氏轉換紅外光譜儀(FTIR)的分析．．．．．．．71
　　4.2.5電子場發射的分析．．．．．．．．．．．．．73
4.3 CF4電漿後處理對SiOx奈米線的研究與討論．．．．．77
　　4.3.1掃瞄式電子顯微鏡(SEM)的分析．．．．．．．．77
　　4.3.2穿透式電子顯微鏡(TEM)的分析．．．．．．．．80
　　4.3.3能量散佈分析儀(EDS)的分析．．．．．．．．．81
　　4.3.4霍氏轉換紅外光譜儀(FTIR)的分析．．．．．．．84
　　4.3.5電子場發射的分析．．．．．．．．．．．．．86
4.4不同電漿處理對SiOx奈米線的研究與討論．．．．．．90
　　4.4.1掃瞄式電子顯微鏡(SEM)的分析比較．．．．．．90
　　4.4.2穿透式電子顯微鏡(TEM)的分析比較．．．．．．92
　　4.4.3能量散佈分析儀(EDS)的分析比較．．．．．．．93
　　4.4.4霍氏轉換紅外光譜儀(FTIR)的分析比較．．．．．94
　　4.4.5電流密度的分析比較．．．．．．．．．．．．96
第五章　結論．．．．．．．．．．．．．．．．．．．．．．98
參考文獻．．．．．．．．．．．．．．．．．．．．．．．．101

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