臺灣博碩士論文加值系統

銦鎵鋅氧化鋅(InGaZnO) 被認為是一相當具有潛力的薄膜電晶體主動層半導體材料，其具有高均勻性、高載子移動率與低溫製程等優勢。本論文旨在研究銦鎵氧化鋅薄膜電晶體應用於氧氣感測器的特徵。實驗結果發現，當元件放置於80℃的氧氣環境中，並給予適當的閘極正偏壓應力，銦鎵鋅氧化鋅薄膜電晶體會產生效果良好的氣體感測變化，相較於真空環境中其ΔVt能提高至13.47 V的差距，汲極電流下降幅度達95.38%，電流靈敏度約-0.4 mA/mole。而在恢復狀態部分，將元件放置於亮態且無偏壓的環境，由於吸附在主動層的氧氣會被照光產生脫附，使得元件的電性會恢復趨近於原本的初始狀態，相較於真空環境其ΔVt可縮小至4 V的差距。因此，若要將銦鎵鋅氧薄膜電晶體應用於氧氣感測器上，需在80℃與閘極正偏壓應力下才能達到感測效果，並且給予照光條件來加速恢復其原本的初始狀態。

Recently, there are many researches about amorphous oxide semiconductors in optical-electrical applications, such as ZnO and amorphous InGaZnO (a-IGZO). a-IGZO has lots of advantages including high uniformity, high mobility and low fabrication temperature. Therefore, it is suitable to be adopted in the active layers of thin-film transistor sensor (TFTS). In this research, when positive gate-bias stress is imposed on the device in oxygen environment at 80℃, the device exhibits a significant change of electrical characteristics, which can be utilized in oxygen-sensing. The drain current of TFTS is decreased as high as 95.38%, and the maximum value of ΔVt about 16.98 V can be achieved. The sensitivity of oxygen gas sensor is -0.4 mA/mole. The properties of threshold voltage in recovery phenomenon under light illumination demonstrate that de-trapping effect of charge was enhanced under light illumination which is compared to that under dark environment. Furthermore, the adsorbed oxygen on the back channel of IGZO active layer can be desorbed under light illumination, and this feature can be employed for the quick recovery characteristic of IGZO TFTS device.

目錄
摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VI
表目錄 XII
第一章 導論 1
1.1 前言 1
1.2 研究動機 3
第二章 文獻回顧 4
2.1 矽與金屬氧化物半導體的比較 4
2.2 金屬氧化物半導體 6
2.3 銦鎵氧化鋅(InGaZnO)薄膜 8
2.4 薄膜電晶體操作原理與特性 15
2.5 氧氣感測器的型式 18
第三章 實驗步驟 25
3.1 IGZO薄膜電晶體元件製作 25
3.2 IGZO感測元件量測系統 27
3.3 IGZO感測元件實驗參數與流程 30
第四章 結果討論 32
4.1 銦鎵氧化鋅薄膜電晶體基本電性 32
4.2 銦鎵氧化鋅薄膜電晶體置於不同氣氛之影響 34
4.3 電應力對於不同氣氛銦鎵氧化鋅薄膜電晶體之影響 39
4.4 升溫對於不同氣氛銦鎵氧化鋅薄膜電晶體之影響 49
4.5 亮態對於不同氣氛銦鎵氧化鋅薄膜電晶體之影響 57
4.6 氣氛恢復對銦鎵氧化鋅薄膜電晶體之影響 62
4.7 短時間下增強電應力對銦鎵氧化鋅薄膜電晶體之影響 65
第五章 結論 69
參考文獻 71
著作列表 75

圖目錄
圖1-1 薄膜電晶體常見結構 2
圖2-1 矽與氧化物半導體的電子軌道示意圖 5
圖2-2 氧空缺產生之示意圖 6
圖2-3 (a)銦鎵氧化鋅(InGaZnO4)結構圖(b)非晶銦鎵氧化鋅(InGaZnO)結構圖 9
圖2-4 左圖不同成份比例對載子移動率(Mobility)的影響；右圖為不同比例下結晶與非晶的分佈圖 10
圖2-5 In: Ga: Zn=1: 1: 1與In: Zn=2: 3原子比例的漂移率與載子濃度關係圖 11
圖2-6 典型a-IGZO薄膜電晶體之I-V特性曲線 12
圖2-7 電場誘導吸附環境中的氧分子 13
圖2-8 (a)氧氣分壓遞減的a-IGZO電晶體I-V曲線(b)氧氣分壓遞增的a-IGZO電晶體I-V曲線 14
圖2-9 電場誘導吸附水分子 15
圖2-10電晶體能帶圖(a)閘極無偏壓(b)閘極給予正偏壓(c)閘極給予負偏壓 16
圖2-11 電晶體型式氧氣感測器結構 20
圖2-12 光學型式氧氣感測器操作流程示意圖 21
圖2-13 順磁效應型式氧氣感測器 22
圖2-14 電流型式氧氣感測器 23
圖2-15 電位型式氧氣感測器 24
圖3-1 薄膜電晶體製作流程圖 26
圖3-2 量測環境 27
圖3-3 量測腔體內部 28
圖3-4 量測陶瓷探針 28
圖3-5 Agilent B1500A 29
圖3-6 Agilent E4980A LCR Meter 29
圖3-7 實驗流程圖 30
圖4-1 Id-Vg線性區基本電性 32
圖4-2 Id-Vg飽和區基本電性 33
圖4-3 Id-Vd基本電性 33
圖4-4 閘極通道電容基本電性 34
圖4-5 室溫下真空氣氛Id-Vg線性區電性曲線 35
圖4-6 室溫下氧氣氣氛Id-Vg線性區電性曲線 35
圖4-7 室溫下真空氣氛閘極通道電容曲線 36
圖4-8 室溫下氧氣氣氛閘極通道電容曲線 36
圖4-9 室溫下真空氣氛Id-Vd曲線 37
圖4-10 室溫下氧氣氣氛Id-Vd曲線 37
圖4-11 IGZO薄膜電晶體吸附氧氣示意圖 38
圖4-12 IGZO薄膜電晶體吸附氧氣能帶變化示意圖 38
圖4-13 真空與氧氣氣氛閘極負偏壓應力下Id-Vg線性區電性曲線 39
圖4-14 真空與氧氣氣氛閘極負偏壓應力下閘極通道電容曲線 40
圖4-15 閘極負偏壓應力下IGZO薄膜電晶體ΔVt-Time曲線 40
圖4-16 閘極正偏壓應力下室溫真空氣氛Id-Vg線性區電性曲線 42
圖4-17 閘極正偏壓應力下室溫氧氣氣氛Id-Vg線性區電性曲線 42
圖4-18 閘極正偏壓應力下室溫真空氣氛Id-Vd曲線 43
圖4-19 閘極正偏壓應力下室溫氧氣氣氛Id-Vd曲線 43
圖4-20 閘極正偏壓下IGZO薄膜電晶體能帶變化示意圖 44
圖4-21 閘極正偏壓兼氧氣氣氛下IGZO薄膜電晶體能帶變化示意 44
圖4-22 閘極正偏壓應力與零偏壓回復IGZO薄膜電晶體ΔVt-Time曲線 45
圖4-23 閘極正偏壓應力與零偏壓回復IGZO薄膜電晶體SS-Time曲線 45
圖4-24 真空氣氛閘極正偏壓應力後真空Id-Vg線性區恢復曲線 46
圖4-25 氧氣氣氛閘極正偏壓應力後真空Id-Vg線性區恢復曲線 47
圖4-26 真空氣氛閘極正偏壓應力後真空Id-Vd恢復曲線 47
圖4-27 氧氣氣氛閘極正偏壓應力後真空Id-Vd恢復曲線 48
圖4-28 真空與氧氣氣氛閘極正偏壓應力下閘極通道電容曲線 48
圖4-29 閘極正偏壓應力下溫度80℃真空氣氛Id-Vg線性區電性曲線 50
圖4-30 閘極正偏壓應力下溫度80℃氧氣氣氛Id-Vg線性區電性曲線 50
圖4-31 閘極正偏壓應力下溫度80℃真空氣氛Id-Vd曲線 51
圖4-32 閘極正偏壓應力下溫度80℃氧氣氣氛Id-Vd曲線 51
圖4-33 溫度80℃氧氣氣氛閘極正偏壓應力下電晶體能帶變化示意圖 52
圖4-34 溫度80℃閘極正偏壓應力與暗態零偏壓回復ΔVt-Time曲線 52
圖4-35 溫度80℃真空與氧氣氣氛閘極正偏壓應力下閘極通道電容曲線 53
圖4-36 溫度80℃閘極正偏壓應力下Id-Vg線性區電性曲線 54
圖4-37 溫度80℃真空閘極正偏壓應力後真空氣氛Id-Vg線性區恢復曲線 55
圖4-38 溫度80℃氧氣氣氛閘極正偏壓應力後真空Id-Vg線性區恢復曲線 55
圖4-39 溫度80℃真空氣氛閘極正偏壓應力後真空Id-Vd恢復曲線 56
圖4-40 溫度80℃氧氣氣氛閘極正偏壓應力後真空Id-Vd恢復曲線 56
圖4-41 溫度80℃真空氣氛閘極正偏壓應力後亮態Id-Vg線性區恢復曲線 58
圖4-42 溫度80℃氧氣氣氛閘極正偏壓應力後亮態Id-Vg線性區恢復曲線 58
圖4-43 溫度80℃真空氣氛閘極正偏壓應力後亮態Id-Vd恢復曲線 59
圖4-44 溫度80℃氧氣氣氛閘極正偏壓應力後亮態Id-Vd恢復曲線 59
圖4-45 溫度80℃閘極零偏壓亮態電晶體能帶變化示意圖 60
圖4-46 溫度80℃閘極正偏壓應力與亮態零偏壓恢復ΔVt-Time曲線 60
圖4-47 真空與氧氣氣氛亮態恢復閘極通道電容曲線 61
圖4-48 溫度80℃真空氣氛暗態與亮態ΔVt-Time恢復曲線 62
圖4-49 溫度80℃氧氣氣氛亮態Id-Vg線性區恢復曲線 63
圖4-50 溫度80℃氧氣氣氛亮態Id-Vd恢復曲線 63
圖4-51 溫度80℃氧氣氣氛閘極正偏壓應力與亮態零偏壓不同氣氛恢復ΔVt-Time曲線 64
圖4-52 溫度80℃亮態零偏壓不同氣氛恢復Id-Vg線性區電性曲線 65
圖4-53 溫度80℃氧氣氣氛增強閘極正偏壓應力Id-Vg線性區電性曲線 66
圖4-54 溫度80℃氧氣氣氛增強閘極正偏壓應力Id-Vd電性曲線 66
圖4-55 增強閘極正偏壓應力下與不同恢復環境ΔVt-Time曲線 68

表目錄
表2-1 非晶矽、多晶矽及金屬氧化物半導體參數比較 4
表2-2 各類氧氣感測器的材料、量測、溫度範圍與反應時間 24
表3-1 真空氣氛感測實驗參數 31
表3-2 氧氣氣氛感測實驗參數 31

參考文獻
[1]N. Izu, W. Shin, N. Murayama, and S. Kanzaki, “Resistive oxygen gas sensors based on CeO2 fine powder prepared using mist pyrolysis”, Sensors and Actuators B: Chemical, vol. 87, pp. 95-98, 2002.
[2]M. Abaab, A.S. Bouazzi, and B. Rezig, “Competitive CuAlS2 oxygen gas sensor”, Microelectronic Engineering, vol. 51-52, pp. 343-348, 2000.
[3]E. Sotter, E. Llobet, E.H. Espinosa, R. Ionescu, X. Vilanova, C. Bittencourt, A. Felten, J.J. Pireaux, and X. Correig, “New TiO2 and carbon nanotube hybrid microsensors for detecting traces of O2 in beverage grade CO2”, International Solid-State Sensors, Actuators and Microsystems Conference, pp. 1039-1042, 2007.
[4]J. Hendrikse, W. Olthuis, and P. Bergveld, “The EMOSFET as a potentiometric transducer in an oxygen sensor”, Sensors and Actuators B: Chemical, vol. 47, pp. 1-8, 1998.
[5]Z. Fan and J. G. Lu, “Chemical sensing with ZnO nanowire field-effect transistor”, IEEE Transactions on Nanotechnology, vol. 5, no. 4 , pp. 393-396, 2006.
[6]C. S. Chua and Y. L. Lob, “Highly sensitive and linear calibration optical fiber oxygen sensor based on Pt(II) complex embedded in sol-gel matrix”, Sensors and Actuators B: Chemical, vol. 155, pp. 53-57, 2011.
[7]R. Chen, A. D. Farmery, A. Obeid, and C. E. W. Hahn, “A Cylindrical-Core Fiber-Optic oxygen sensor based on fluorescence quenching of a platinum complex immobilized in a polymer matrix”, IEEE Sensors Journal, vol. 12, no. 1, pp. 71-75, 2012.
[8]F. König and J. Müller, “A novel micro paramagnetic oxygen sensor based on an anisotropic magneto Resistance-Device”, 2010 IEEE Sensors, pp. 1496-1499, 2010.
[9]S. Vonderschmidt and J. Müller, “A novel micro paramagnetic oxygen sensor”, 2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS), pp. 903-906, 2010.
[10]K. Wallgren and S. Sotiropoulos, “Oxygen sensors based on a new design concept for amperometric solid state devices”, Sensors and Actuators B: Chemical, vol. 60, pp. 174-183, 1999.
[11]A. Lund, T. Jacobsen, K.V. Hansen, and M. Mogensen “Limitations of potentiometric oxygen sensors operating at low oxygen levels”, Sensors and Actuators B: Chemical, vol. 160, pp. 1159-1167, 2011.
[12]S. K. Kim, S. I. Cho, Y. J. Choi, K. S. Cho, S.M. Pietruszkob, and J. Jang, “Coplanar amorphous silicon thin film transistor fabricated by inductively-coupled plasma CVD”, Thin Solid Films, vol. 337, pp. 200-202, 1999.
[13]M. H. Juang, Y. S. Peng, D. C. Shye, C. C. Hwang, and J. L. Wang, “Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors”, Microelectronic Engineering, vol. 88, pp. 1582-1585, 2011.
[14]J. H. Oh, K. W. Ahn, D. H. Kang, W. H. Park, J. Jang, Y. J. Chang, J. B. Choi, H. K. Min, and C. W. Kim, “Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon”, Solid-State Electronics, vol. 52, pp. 482-486, 2008.
[15]K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, vol. 432, pp. 488-492, 2004.
[16]K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, “Comparison of ultraviolet photo-field effects between hydrogenated amorphous silicon and amorphous InGaZnO4 thin-film transistors”, Japanese Journal of Applied Physics, vol. 48, pp. 010203, 2009.
[17]H. Hosono, “Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application”, Journal of Non-Crystalline Solids, vol. 352, pp. 851-858, 2006.
[18]K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “ Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations”, Physical Review B, vol. 75, pp. 035212, 2007.
[19]T. Kamiya, K. Nomura, and H. Hosono, “Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping”, Journal of Display Technology, vol. 5, no.12, pp. 468-483, 2009.
[20]K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high performance flexible Thin-Film Transistors”, Japanese Journal of Applied Physics, vol. 45, no. 5B, pp. 4303-4308, 2006.
[21]J. K. Jeong, H. W. Yang, J. H. Jeong, Y. G. Mo, and H. D. Kim, “Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors”, Applied Physics Letters, vol. 93, pp. 123508, 2008.
[22]D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, and J. Chung, “Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules”, Applied Physics Letters, vol. 90, pp. 192101, 2007.
[23]W. F. Chung, T. C. Chang, C. S. Lin, K. J. Tu, H. W. Li, T. Y. Tseng, Y. C. Chen, and Y. H. Taig, “Oxygen-Adsorption-Induced anomalous capacitance degradation in amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors under Hot-Carrier stress”, Journal of The Electrochemical Society, vol. 159, pp. H286-H289, 2012.
[24]W. F. Chung, T. C. Chang, H. W. Li, C. W. Chen, Y. C. Chen, S. C. Chen, T. Y. Tseng, and Ya-Hsiang Tai, “Influence of H2O dipole on subthreshold swing of amorphous Indium-Gallium-Zinc-Oxide thin film transistors”, Electrochemical and Solid-State Letters, vol. 14, pp. H114-H116, 2011.
[25]W. F. Chung, T. C. Chang, H. W. Li, S. C. Chen, Y. C. Chen, T. Y. Tseng, and Y. H. Tai, “H2O-Assisted O2 adsorption in Sol-Gel derived amorphous Indium Gallium Zinc Oxide thin film transistors”, Electrochemical and Solid-State Letters, vol. 14, pp. H235-H237, 2011.
[26]S. D. Herman and J. B. Christen, “Fabrication and characterization of a silicone fluorescent oxygen sensor”, 2010 IEEE Biomedical Circuits and Systems Conference (BioCAS), pp. 70-73, 2010.