臺灣博碩士論文加值系統

氮化鎵(GaN)功率電晶體具有高載子遷移率、高崩潰電壓、高電流密度、低導通電阻、低柵極電荷，以及低輸出電容等材料特性，適合用於功率電子電路中所需的高速開關。
本篇論文主要設計簡易測量電路用於量測空乏型氮化鎵功率電晶體之部分電性參數，電路設計的重點在校正測量開關切換時間、閘極電荷，以及閘極電壓-汲極電流曲線三種參數，以供後續功率電路設計所需，文中詳細說明測量電路設計以及量測方法，並比對測量值與估計值的誤差，因受限於所設計的測量電路，測量值誤差約達32%。

Gallium Nitride (GaN) power transistors exist better material properties than Si-based transistors such as higher electron mobility, higher breakdown voltage, higher current density, lower on-state resistance, lower gate charge and smaller output capacitance. It is particularly suitable to function as high speed switches for power electronic circuit applications.
The thesis aims to design a circuit module to measure three electrical parameters of depletion-mode GaN power transistors in order to provide information for power electronic circuit design. Three major parameters include switching time, gate charge, and DC-IV curve. A detailed description of the designed circuits is given and measurement results are compared to the estimation model. The measurement error is about 32% because of design issues of the circuit module.

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VII
表目錄 X
符號說明 XI
第一章 緒論 1
1.1 研究動機 1
1.2 氮化鎵器件應用 1
1.3 論文架構 3
第二章 GaN器件電性參數 4
2.1 GaN功率器件簡介 4
2.2 GaN功率器件DC-IV 7
2.3 GaN功率器件動態特性 8
第三章 功率元件電性參數量測 12
3.1開關切換時間量測(Switching time test) 13
3.1.1 實驗目的與儀器 13
3.1.2 實驗原理 13
3.1.3 IRF510 實驗步驟 15
3.1.4 BSS159N 實驗步驟 15
3.1.5 UDGM 實驗步驟 16
3.1.6 實驗結果與討論 17
3.2 閘極電荷量測(Gate charge test) 24
3.2.1 實驗目的與儀器 24
3.2.2 實驗原理 24
3.2.3 IRF510 實驗步驟 26
3.2.4 BSS159N 實驗步驟 28
3.2.5 UDGM 實驗步驟 28
3.2.6 實驗結果與討論 29
3.3電流-電壓特性曲線量測(I-V curve test) 36
3.3.1 實驗目的與儀器 36
3.3.2 實驗原理及步驟 37
3.3.3 IRF510 實驗結果與討論 37
3.3.4 UDGM 實驗結果 39
第四章 量測參數驗證 40
第五章 結論 43
參考文獻 44

[1] Fabio Sacconi, Aldo Di Carlo, P. Lugli, and Hadis Morkoç, “Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs”, IEEE Transactions on electron devices, 2001, pp.450-457.
[2]黃智方和張庭輔，「氮化鎵功率元件簡介」，電子資訊，第二十卷第一期，103年6月30日。
[3]Yole Developpement, December 2013, “Free-Bulk & Standing GaN”,https://www.slideshare.net/Yole_Developpement/yole-bulk-ganoctober2013reportsample.
[4]黃裕廷，「氮化鋁鎵/氮化鎵高載子遷移率電晶體之電性量測與大訊號模型」，國立交通大學，碩士論文，民國100年。
[5]Xiucheng Huang, Weijing Du, Fred C. Lee, and Qiang Li, “A Novel Driving Scheme for Synchronous Rectifier in MHz CRM Flyback Converter with GaN Devices”, IEEE ECCE, 2015, pp.1754-1761.
[6] http://www.elsledtech.com/products/els-5watta19bulb.html
[7]https://car.remkvartir.org/car-lights/
[8]https://www.google.com.tw/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&ved=0ahUKEwiKrYammPjUAhUJp5QKHX-hBAYQjxwIAw&url=http%3A%2F%2Fvisiblediodelasers.com%2Fproduct%2F445nm-blue-laser-diodes%2F&psig=AFQjCNGvrT4sU1XljBEdKrtSeCT4kdXxXQ&ust=1499551902322431
[9]https://www.google.com.tw/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&ved=0ahUKEwiymeW5mPjUAhWHk5QKHSvOA4EQjxwIAw&url=https%3A%2F%2Fgearpatrol.com%2F2015%2F10%2F23%2Fsemi-autonomous-cars-bring-self-driving-car-closer-reality%2F&psig=AFQjCNE-GtrM__gGITMwlTOa6b-TC3ZXgQ&ust=1499551941030234
[10]https://www.google.com.tw/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&ved=0ahUKEwiLy6zSmPjUAhXGnZQKHYbyByMQjxwIAw&url=http%3A%2F%2Fwww.fabricatingandmetalworking.com%2F2012%2F09%2F3d-lasers-and-their-general-application%2F&psig=AFQjCNGalPlncpTGenhZSL6qrRM3hq7S5A&ust=1499551994134723
[11]https://www.indiamart.com/tjsvsteelfabrication-galvanizing/telecommunication-tower.html
[12]https://www.google.com.tw/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&ved=0ahUKEwiA0N3nmfjUAhWDl5QKHSf3BLQQjxwIAw&url=http%3A%2F%2Fwww.electronicspecifier.com%2Fpower%2Fgan-power-switching-transistors-stack-to-shrink&psig=AFQjCNGZNJgNPK1f6VGp3KCz1vHK3E-6IQ&ust=1499552305464529
[13]http://www.bmwblog.com/2016/04/02/federal-local-incentives-rebates-plug-hybrids-electric-cars/
[14]http://4k.widewallpapers.net/p/computers/datacenter-servers-wallpapers-4k-ultra-hd.shtml
[15]李朱育，李敏鴻，李勝偉，柯文政，段生振和陳念波，圖解光電半導體元件，初版，台灣五南圖書出版股份有限公司，台北市，民國103年7月。
[16]陳建中，「AlGaN/GaN高電子遷移率電晶體(HEMTs)直流電性測試」，國立交通大學，碩士論文，民國97年。
[17]Cepheiden, January 2016, “HEMT-band structure scheme-en.svg”, January, 2016, https://en.wikipedia.org/wiki/File:HEMT-band_structure_scheme-en.svg
[18]H. Xing, S. Keller, Y-F Wu, L. McCarthy, I. P. Smorchkova, D. Buttaril, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars and U. K. Mishra, “Gallium nitride based transistors”, Institute of Physics Publishing Journal of Physics, vol.13, pp.7139-7157, 2001.
[19]陳俊帆，「δ-doped InxGa1-xAs/InAlAs量子井的電子特性研究」，中山大學，碩士論文，2005年。
[20] Dmitry Pozdnyakov, “Scattering of electrons by ionized impurities in semiconductors:quantum-mechanical approach to third body exclusion”, Journal of Computational Electronics, Volume 13, Issue 1, pp. 338-351, 2014.
[21]郝旭春，「考虑自熱效應的SOI MOSFET漏電流模型及熱阻研究」，安徽大學，碩士論文，2009年。
[22]馮端，固體物理學大辭典，初版，建宏出版社，台北縣，1998年3月。
[23]National Programme on Technology Enhanced Learning (NPTEL), “Fundamental concepts of semiconductors”, http://nptel.ac.in/courses/115102025/10.
[24] Yuda Zhao, Jingsi Qiao, Zhihao Yu, Peng Yu, Kang Xu, Shu Ping Lau, Wu Zhou,Zheng Liu, Xinran Wang, Wei Ji and Yang Chai, High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs, First published, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2016.
[25]Power MOSFET Basics: understanding Gate Charge
and Using it to Assess Switching Performance, Device Application Note AN608A, VISHAY SILICONIX.
[26]IRF510,SiHF510,Datasheet, Vishay.
[27]BSS159N, Datasheet, Infineon.
[28]Vrej Barkhordarian,“Power MOSFET Basics”, International Rectifier, El Segundo.
[29]Anup Bhalla, Fei Wang, “High Voltage Power MOSFET switching parameters : Testing Methods for Guaranteeing datasheet limits”, Alpha & Omega Semiconductor, May 20, 2009.
[30]Zheng Chen, Dushan Boroyevich, Rolando Burgos,“ Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics”, IEEE IPEC, 2010, pp.164-169.
[31]Use Gate Charge to Design the Gate Driver Circuit for Power MOSFET and IGBTs, Application Note AN-944, International Rectifier.
[32]Laszlo Balogh, “Design And Application Guild For High Speed MOSFET Gate Drive Circuit
[33]A.J. Yiin, R.D. Schrimpf, and K.F. Galloway,“GATE-CHARGE MEASUREMENTS FOR IRRADIATED N-CHANNEL DMOS POWER TRANSISTORS”, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 38. NO. 6. DECEMBER 1991.