臺灣博碩士論文加值系統

本研究主要以熱燈絲化學氣相沉積法輔以自製硬陽極氧化鋁模板，製作規則鑽石奈米針尖陣列，並且藉由不同的模板，調整針尖間距，量測其場發射特性，討論是否有遮蔽效應存在。過程中以掃描式電子顯微鏡檢測檢測試片表面形貌、拉曼光譜儀檢測鑽石特性及以場發射量測儀檢測鑽石針尖陣列場發射性質。
特別的地方在於，本研究首創利用硬陽極氧化鋁板之阻障層成長鑽石針尖陣列，相較於以孔洞陣列製作出的結構，高度與規則度更為一致。由於鑽石難以於氧化鋁模板上成核成長，研究中配合以聚乙烯亞胺附著鑽石粉末之輔助成核方法，成功地製作出創新三角錐形針尖，其尖端半徑為15~30奈米，高度約為100~200奈米，針尖間距介於50~300奈米之間。
最後的場發射量測結果顯示，本研究所製作的創新三角錐形鑽石針尖結構，針尖間距與高度比於0.25~1的時候，有最佳的場發射起始電場(5.4 V/μm)，其最大場發射電流密度值為8.4 μA/cm2，並且證實在此種結構下能避免過去奈米碳管研究所無法避免的場遮蔽效應。

Screening effect of field emission on the diamond nano-tip array with different pitches is investigated. The diamond nano-tip arrays are formed by hot-filament chemical vapor deposition (HFCVD) on aluminum oxide (AAO) template. The AAO template is fabricated by hard anodization. Compared with moderate anodization, there are many advantages for using hard anodization, such as fast growing and high regularity. The nano diamond particles are adhered onto the AAO template by Polyethylenimine pretreatment to increase the nucleation density of diamond. The diamond film is then deposited on the barrier layer of AAO template by HFCVD method. The diamond tips array is developed after removal of AAO template by wet chemical etching. The field emission effect with different nano-tip arrays are measured by field emission meter. The morphology and quality of diamond nano-tip array are examined by scanning electron microscopy (SEM) and Raman spectroscopy, respectively. The innovative triangular pyramidal structures are obtained successfully with tip radius of about 15 nm-30 nm, and height of 100 nm-200 nm at different pitches from 50 nm to 300 nm. As a result, the lowest turn-on voltage of 5.4 V/μm and highest field emission current density of 8.4 μA/cm2 can be obtained at the smallest pitch- height ratio of 0.25-1 without screening effect in the current study.

論文摘要 I
Abstract II
誌謝 III
目錄 IV
表目錄 VIII
圖目錄 IX
第一章 前言 1
第二章 文獻回顧 5
2.1場發射效應 5
2.1.1基本場發射理論 5
2.1.2發射端尺寸效應 7
2.1.3場發射遮蔽效應 10
2.2鑽石場發射針尖陣列製作 16
2.2.1直接蝕刻法 16
2.2.2鑽石塗層法 18
2.2.3模造法 20
2.3陽極氧化鋁 23
2.3.1陽極氧化鋁結構 23
2.3.2陽極氧化鋁形成機制 25
2.3.3結構製作 27
2.3.4二次陽極處理 29
2.3.5硬陽極處理 30
2.4化學氣相沉積鑽石薄膜法 36
2.4.1人工合成鑽石歷史 36
2.4.2 化學氣相沉積鑽石薄膜原理 38
2.4.3 各式化學氣相沉積法簡介 41
2.5輔助鑽石成核方法 44
2.6研究動機與目的 49
第三章 實驗儀器與製程 51
3.1 實驗流程 51
3.2 實驗藥品與氣體 52
3.3 硬陽極氧化鋁模板製作 53
3.3.1 硬陽極處理設備 53
3.3.2 電拋光處理 56
3.3.3 實驗步驟 58
3.4 鑽石顆粒輔助成核 60
3.4.1 電泳沉積法 60
3.4.2 Polyethylenimine(PEI)附著法 61
3.5 鑽石薄膜沉積 63
3.5.1 熱燈絲化學氣相沉積設備 63
3.5.2 燈絲碳化 67
3.5.3 實驗步驟 69
3.6 移除陽極氧化鋁模板 70
3.7 檢測儀器 71
3.7.1 掃描電子顯微鏡 71
3.7.2 拉曼光譜儀 72
3.7.3 場發射量測儀 74
第四章 硬陽極處理實驗與討論 76
4.1 草酸硬陽極處理 77
4.1.1 定電壓法 77
4.1.2 定電流法 83
4.2 硫酸硬陽極處理 87
4.3 移除阻障層 90
第五章 鑽石針尖陣列製作與討論 92
5.1 鑽石前處理方法比較 92
5.2 不同間距之針尖陣列製作 96
5.3 鑽石針尖陣列場發射遮蔽效應討論 103
第六章 結論與未來展望 106
參考文獻 109

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