臺灣博碩士論文加值系統

此論文中，藉由氣相傳輸法，成功將氧化鋅奈米線成長於預先沉積一層種晶層之矽基板上。整個實驗流程分為三個部分：首先是利用化學氣相沉積法將氧化鋅種晶層沉積在矽基板上，接著是改變各項參數去成長氧化鋅奈米線，最後進一步探討氧化鋅奈米線在場發射的特性研究。
沉積種晶層於矽基板上之目的為取代金屬催化劑，解決奈米線與基板間的晶格不匹配之問題並提供成核的位置予奈米線成長。量測系統方面利用X-ray繞射、場發射電子顯微鏡(FESEM)和能量散佈光譜儀(EDS)得知其種晶層是由類單晶的氧化鋅奈米顆粒所組成，顆粒大小約為800 nm。成長奈米線的過程中，藉改變基板放置的位置、成長溫度、鋅粉與碳粉的組成比例、成長時間、爐管內的氧流量及壓力等變數來探討其變因對成長氧化鋅奈米線的結構及特性影響。結果發現適當的氧氣和鋅的濃度有助於成長高結晶性的氧化鋅奈米線。最後再進一步利用二極式氧化鋅奈米管結構可以得到螢光粉發光照，分析其奈米線運用在場發射顯示器上的特性研究。
氧化鋅奈米線的最佳成長環境條件為：碳粉和氧化鋅粉以3:7重量百分比混合作為母材並將已沉積種晶之矽基板置於材料源正上方，成長溫度設定為1000℃並持溫60分鐘，爐管內的氧氣與氮氣流量分別為為50和70 sccm。成長出的氧化鋅奈米線有著最好的結晶性，且具有適當的分佈密度，在場發射元件的量測中具有最長的活期，當電流密度為0.1 μA/cm2對應到最低的起始電壓為0.14 V/μm，並擁有最好的場增強因子其值為1573。

The growth and characteristics of the ZnO nanowires, grown on seed layer-deposited silicon substrate via vapor transport method, were investigated. There were three subjects in this study. The first one was to deposit the ZnO seed on the silicon substrate via chemical vapor deposition method; the second was to vary the growth parameters for the synthesis of ZnO nanowires; and the last was to analyze the field emission characteristics of the ZnO nanowires.
Using the ZnO seed layer, which replaced to the metal catalysts, could improve the lattice mismatch between the ZnO nanowires and the silicon substrate and supply nucleation sites for the growth of nanowires. From the measurements of X-ray diffraction (XRD), scan emission microscopy (SEM), and energy dispersive spectrum (EDS), it exhibited that the seed layer was consisted of ZnO nano-particals which had a single-crystalline-like structure and an averaged grain size of about 800 nm. For the synthesis of ZnO nanowires, the growth parameters were varied to fine the optimal conditions for nanowires growth, which were the substrate position, growth temperature, the weight ratio of ZnO and graphite powders, together with the growth time, the oxygen flow rate, and the furnace pressure. it exhibited that the oxygen and zinc concentrations were very important factors to grow high crystalline ZnO nanowires. Furthermore, the field emission property of nanostructures was measured. Bright phosphor image was observed from a diode-construction field emission display.
The optimal characteristics of nanowires were obtained when the source was a mixture composed of C and ZnO with a concentration ratio of 3:7 wt%; the substrate was right placed on top of the source and the nanowires were grown at 1000℃ for 60 minutes with N2 flow rate 70 sccm and O2 flow rate 50 sccm. The ZnO nanowires, with the best crystallinity, a suitable distribution density, and a long lifetime, had an optimal field emission characteristic and a low turn-on voltage at 0.14 V/μm when the emission current density reaches 0.1 μA/cm2; the field enhancement factor β was 1573.

Content
摘要 I
ABSTRACT III
CHAPTER 1 1
INTRODUCTION 1
1-1 Preface 1
1-2 1-D semiconductor and semiconductor oxide nanostructures 2
1-3 Introduction to nanotechnology 3
1-4 ZnO characteristics and nanostructures 4
CHAPTER 2 6
REVIEW AND THEORY BASIS PROPERTIES 6
2-1 Overview of Zinc Oxide 6
2-2 Chemical Vapor Deposition 7
2-3 Vapor-based Growth Mechanism 8
2-4 The Luminescence Mechanism of Zinc Oxide 10
2-5 Fowler-Nordheim Theory 12
CHAPTER 3 15
EXPERIMENTAL DETAILS AND MEASUREMENT SYSTEM CONFIGURATIONS 15
3-1 Experiment procedures 15
3-1-1 Experimental material 15
3-1-2 Substrate treatment 15
3-1-3 The fabrication of the seed layer 16
3-1-4 The fabrication of ZnO nanowires 18
3-2 Analyses system 19
3-2-1 Scanning electron microscopy (SEM) 19
3-2-3 X-ray powder diffraction (XRD) 20
3-2-4 Transmission electron microscopy (TEM) 20
3-2-5 Photoluminescence (PL) 21
3-2-6 Field emission measurement 22
CHAPTER 4 23
RESULTS AND DISCUSSION 23
4-1 The seed layer for synthesis of ZnO nanowires 24
4-1-1 Scanning electron microscopy (SEM) 24
4-1-2 Energy-dispersed X-ray (EDX) 25
4-1-3 X-ray diffraction (XRD) 25
4-1-4 ZnO nanowires growth 26
4-2 Effect of substrate position on the growth of nanowires 27
4-2-1 Scanning electron microscopy (SEM) 27
4-2-2 X-ray diffraction (XRD) 28
4-2-3 Photoluminescence (PL) 29
4-2-4 Transmission electron microscopy (TEM) 29
4-3 Effect of temperature on the growth of nanowires 30
4-3-1 Scanning electron microscopy (SEM) 31
4-3-2 X-ray diffraction (XRD) 32
4-3-3 Photoluminescence (PL) 32
4-3-4 Field emission property 33
4-4 Effect of weight ratio of ZnO to graphite powders on the growth of nanowires 34
4-4-1 Scanning electron microscopy (SEM) 35
4-4-2 X-ray diffraction (XRD) 36
4-4-3 Photoluminescence (PL) 36
4-4-4 Transmission electron microscopy (TEM) 36
4-4-5 Field emission property 37
4-5 Effect of growth time on the synthesis of nanowires 38
4-5-1 Scanning electron microscopy (SEM) 38
4-5-2 X-ray diffraction (XRD) patterns 39
4-5-3 Photoluminescence (PL) 39
4-5-4 Transmission electron microscopy (TEM) 40
4-5-5 Field emission property 41
4-6 Effect of oxygen flow rate on the growth of nanowires 42
4-6-1 Scanning electron microscopy (SEM) 42
4-6-2 X-ray diffraction (XRD) 43
4-6-3 Photoluminescence (PL) 44
4-6-4 Transmission electron microscopy (TEM) 44
4-6-5 Field emission property 45
4-7 Effect of furnace pressure on the growth of nanowires 46
4-7-1 Scanning electron microscopy (SEM) 46
4-7-2 X-ray diffraction (XRD) 47
4-7-3 Transmission electron microscopy (TEM) 48
4-7-4 Field emission property 48
4-8 Comparison of the characteristics of nanowires grown with different parameters 50
4-8-1 The morphologies of the ZnO nanowires 50
4-8-2 Crystallinity 51
4-8-3 Field emission property 52
4-8-4 Summary 54
CHAPTER 5 56
CONCLUSION 56
REFERENCES 58
PUBLICATION LIST: 65

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