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COVER
Contents
Table Captions
Figure Captions
Chapter 1 Introduction
1.1 About This Work
1.2 The Liquid Phase Deposition System and Rapid Thermal Processing System
1.3 The Measurement System
Chapter 2 The Growth Mechanism of Liquid Phase Deposition Silicon Dioxide
2.1 The Preparation of H2SiF6Solution
2.2 The Relationship between The Deposition Rate and The Quantity of H2OAdded
2.3 The Initial Growth Mechanism of LPDOXide
2.3.1 The dependency of growth mechanism on temperature
2.3.2 The dependency of growth mechanism on substrate surface
2.3.3 The initial growth mechanism
2.4 The Physical Properties of LPDOxide
2.5 Conclusion
Chapter3 The Characteristics of Fluorinated Gate Oxides Prepared by Varying the LPD Growth Times under a Given RTO or RTN Time
3.1 Introduction
3.2 Sample Preparation
3.3 Results and Discussion
3.3.1 The physical property of fluorinated oxides
3.3.2 Initial electrical properties
3.3.3 Radiation effect
3.3.4 Characterization of LPD oxides comtaining Al atoms
3.4Comclusion
Chapter4 The Characteristics of Fluorinated Gate Oxides Prepared by Varying the RTO and/or RTN Nimes under a Given LPD Growth Time
4.1 Introduction
4.2 Sample Preparation
4.3 Results and Discussion
4.3.1 The physical property of fluorinated gate oxides
4.3.2 The initial electrical properties
4.3.3 Radiation effect
4.3.4 Comparison between the fluorinated gate oxides and conventional rapid thermal growh oxides
4.4Conclusion
Chapter5 The Initial Electrical and Radiation Properties of Nitrided Oxides by High Temperature Rapid Thermal Processing
5.1 Introduction
5.2 The Nitrided Oxides Prepared by Nitridation in N2OAmbient
5.2.1 Sample preparation
5.2.2 Results and discussion
A Initial properties
B Radiation effect
5.3The Nitrided Oxides Prepared by Nitridation in NH3 Ambient and Then Reoxidation in O2 Ambient
5.3.1 Samplepreparation
5.3.2 Results and Discussion
A Initial electrical and radiation har dness properties of NOoxides prepqred by changing nitridation condition(N*O)
B Initial electrical and radiation har dness properties of RNO oxides prepared by changing nitridation condition(RN*O)
C Initial electrical and radiation hardness properties of RNO oxides prepared by changing reoxidation pressure condition(R*NO)
D Initial electrical and radiation hardness properties of RNO oxides prepared by changing reoxidation time condition(R*NO)
E Comparison among the N*O,RN*O,R*NO,and R**NO samples
5.4Conclusion
Chapter6 Final Conclusion and Suggestions for Future Work
6.1Conclusion of This Work
6.2Suggestions for The Future Work
References
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