臺灣博碩士論文加值系統

本論文使用探針掃描微影術(Scanning probe Lithography)的方式，在SOI(110)基板上製作週期小於0.5 μm的光柵(Grating)結構。主要可分為三個部份，第一部分為探針掃瞄微影術氧化研究，探討交直流電壓、交流電壓頻率以及探針掃描速率對氧化層的影響。在第二部份中，將使用TMAH 25 % w.t.溶液進行非等向性濕蝕刻(Anisotropic Wet Etching)，並在不同蝕刻溫度與時間下做分析。在第三部分，使用直流電壓進行氧化，分別改變探針與試片表面間距以及控制環境溼度下進行光柵結構製作。經過實驗後，使用直流電壓10 V、探針掃描速率1 μm/s和Z(T:B)為-0.9 V及週遭環境溼度控制在39 %下進行微影氧化，並且在60秒60 °C之TMAH蝕刻後，可以得到結構高度194.8 nm與結構寬度195 nm，高寬比為1：1，週期為0.5 μm的光柵結構，最後將在波導管上完成週期為0.5 μm和0.3 μm的光柵結構製作。

The purpose of the study is to fabricate grating period less than 0.5 μm using Scanning Probe lithography. The thesis is organized with three parts. First, the efficiencies of lithography oxidation were measured and discussed using various DC voltages, AC frequencies and oxidation scanning rates. Second, TMAH 25 % wt. solution was employed in anisotropic wet etching, and the etched grating shapes and etching rates were evaludated under different temperatures. Third, with low humidity, the oxidation width were further decreased by modifying the distance from the AFM nano-probe to the wafer surface. By experiment, the environment parameters of optimization were obtained as: DC voltage 10 V, scanning probe rate 1 μm/s, Z(T:B) at -0.9 V and environment humidity 39 %. Grating structure of the period of 0.5 μm, structure depth of 194.8nm and structure width of 195 nm was achieved by 60-second wet etching in TMAH at 60℃. These parameters of optimization could provide good references for further research in patterning grating structure on the top surface of a SOI waveguide.

摘要 i
Abstract ii
致謝 iii
目錄 iv
表目錄 vi
圖目錄 viii
第一章 緒論 1
1-1前言 1
1-2 文獻探討 3
1-3 研究動機與方法 8
1-4 論文架構 9
第二章 實驗原理及程式 10
2-1探針掃描微影術之氧化機制 10
2-1-1 氧化原理簡介 10
2-1-2 濕度對氧化的影響 13
2-1-3 交直流電對氧化的影響 15
2-2 絕緣層上鍍矽(SOI)基板簡介 17
2-3 原子力顯微鏡介紹 20
2-3-1 原子力顯微鏡簡介 20
2-3-2 原子力顯微鏡的基本原理 21
2-3-3 原子力顯微鏡操作模式 25
2-4 非等向性濕蝕刻 29
2-4-1 非等向性濕蝕刻簡介 29
2-4-2 非等向性濕蝕刻反應機制 30
2-4-3 單晶矽晶體結構 38
2-5 平面光波導介紹 42
第三章 探針掃描微影術 45
3-1 實驗目的 45
3-2 實驗規劃及流程 48
3-3 探針掃描微影術氧化探討 55
3-3-1 交流電壓對氧化的影響 55
3-3-2 交流頻率對氧化的影響 57
3-3-3 氧化速率對氧化的影響 63
3-4 非等向性濕蝕刻實驗探討 65
第四章 實驗結果與討論 69
4-1 在SOI (110)基板使用直流偏壓製作光柵結構 70
4-1-1 未控制濕度下製作光柵結構 70
4-1-2 控制濕度及氧化間距製作光柵結構 78
4-1-3 製作不同週期的光柵 82
4-2 在光波導管上製作光柵 86
第五章 總結與未來的展望 91
第六章 參考文獻 94
附錄A OptiBPM軟體使用說明 96
附件B 光罩設計說明 103

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