臺灣博碩士論文加值系統

近年來許多奈米點記憶體被廣泛地拿來研究以取代傳統浮閘極記憶體的可靠度問題，而在許多奈米點的材料中，以金屬奈米點去做為記憶體，更被認為有機會成為新一代記憶體元件。金屬奈米點有高狀態密度、可調變金屬功函數以及不容易受到載子侷限效應所引起的能階擾動，因此可以減少元件的操作電壓、增加寫入與抹除的速度，以及增加電子的保存時間。
本篇論文使用之元素為氧化鋅(ZnO)奈米粒子，搭配著氧化鋅為半導體材料，因為氧化鋅除了價格低廉、擁有寬的能隙(3.4eV)、常溫下較大的激子束縛能(60meV)，且可經由製備方式調變氧空缺與鋅間隙原子的密度去影響其導電能力，所以運用以上條件會先以磁控濺鍍去做成MOS結構的電容器去觀察各種條件之薄膜堆疊的介面特性；再使用磁控共濺鍍將絕緣層置入奈米點，觀察奈米點的電荷儲存效應。

In the recent years many nanodots memories have been researched for the reliability of using it to replace floating gate memories. In many of the components of the nanodots, the metal parts of the nanodots has been used as the memory storage device and it is possible that it could become the new generation of main components for memory storage devices. The metal nanodots have a high density of states around Fermi level, adjustable work functions and is not easily affected by energy perturbation caused by carrier confinements. Hence could decrease the voltage necessary for the components; increase the speed of erasing and imputing data and increase the preservation time for electrons.
The material is used in this thesis is zinc oxide nanoparticles, with zinc oxide as the semiconductor. As zinc oxide is an inexpensive material with a wide bandgap of 3.4eV; a large exciton binding energy of 60meV at room temperature and is also capable of changing the density of oxygen vacancies and the Zn interstial atoms which consequently affects its conductivity. Therefore to utilize the mentioned conditions we will first use magnetron sputtering to create the MOS structure of the capacitors to observe the properties of the interface of the different variables ; then the magnetron co-sputtering to put the nanodots into the insulator, to observe the nanodot's storage ability。

摘要.......................................................i
Abstract..................................................ii
致謝.....................................................iii
目錄......................................................iv
表目錄...................................................viii
圖目錄.....................................................ix
第一章 序論...............................................1
參考文獻....................................................4
第二章 理論基礎............................................5
2.1 氧化鋅薄膜材料特性....................................5
2.1.1 氧化鋅晶體結構.......................................5
2.1.2 氧化鋅薄膜之電特性....................................6
2.1.3 氧化鋅薄膜光學性質....................................6
2.1.4 氧化鋅耐米結構製備....................................7
2.2 MOS基礎理論.........................................8
2.2.1 MOS結構............................................8
2.2.2 理想MOS電容CV特性....................................9
2.2.3 反轉電容與頻率關係...................................12
2.2.4 電容器內缺限型態及其影響..............................13
2.3 電容器之理論與數值計算................................16
2.3.1 介電常數...........................................16
2.3.2 金屬半導體功函數差...................................16
2.3.3 半導體參雜濃度......................................17
2.3.4 平帶電容與平帶電壓...................................18
2.3.5 氧化層電荷.........................................19
2.3.6 介面能態密度........................................20
2.4 漏電流因素與穿隧探討.................................22
2.4.1 直接穿隧...........................................23
2.4.2 傅勒-諾得翰穿隧.....................................25
2.4.3 蕭基發射...........................................26
2.4.4 普爾-法蘭克發射.....................................27
參考文獻...................................................38
第三章 實驗製程與儀器系統...................................42
3.1 實驗製程與量測機台...................................42
3.1.1 膜厚量測儀.........................................42
3.1.2 霍爾效應...........................................43
3.1.3 濺鍍與共濺鍍原理.....................................45
3.1.4 半導體量測系統......................................46
3.2 實驗製程..........................................47
3.2.1 標準試片之製備......................................47
3.2.2 薄膜平台之製作......................................48
3.2.3 試片之熱處理........................................50
3.2.4 製作鋁電極.........................................50
參考文獻...................................................58
第四章 實驗結果與討論......................................59
4.0 濺鍍氧化鋅之通氧特性探討..............................59
4.1 氧化鋅電容器之介面特性探討............................60
4.1.1 氧化鋅介面使用氧電漿處裡之特性探討......................61
4.1.2 破真空對氧化鋅介面之特性探討...........................62
4.2 氧化鋅電容器之介面特性探討............................63
4.2.1 共濺鍍氧化鋅-二氧化矽電容器之厚度特性探討................64
4.2.2 共濺鍍氧化鋅-二氧化矽電容器之濺鍍瓦數特性探討.............65
4.2.3 共濺鍍氧化鋅-二氧化矽電容器之穩定性探討..................66
第五章 結論與未來展望......................................79
5.1 結論..............................................79
5.2 未來展望...........................................80

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