臺灣博碩士論文加值系統

　　硫化鋅（ZnS）及氧化鋅（ZnO）具有寬能隙（分別為3.68及3.35 eV）的特性，為Ⅱ-Ⅵ族化合物半導體成員，在商業上經常使用作為螢光粉，同時也應用在薄膜電激發光元件上。優異的發光特性，且可發出可視光使其適合作為螢光材料，主要的用途是在於照明光源、顯示器元件與光輻射偵測器等方面。
　　本論文利用低溫固態及液相化學沉澱方法來製備高品質且奈米化的硫化鋅、硫化鋅摻雜錳及氧化鋅奈米螢光粉，將利用X光繞射、熱差分析、能量分散式X光、掃瞄式電子顯微鏡、光激發光光譜、色度座標、拉曼光譜及阻抗分析等的量測來探討奈米粉末的特性與品質。以改變不同的實驗參數來找出最好的發光效率。
　　實驗顯示，由於粒子尺度的縮小，其光激發光譜（Photoluminescence excitation spectrum, PLE）往短波長偏移的現象，而其光放射光譜（Photoluminescence spectrum, PL）強度與粒子尺度大小、硫化鋅母體之硫與鋅原子成份比例不同而發生變化。當摻雜1mol%錳離子時，其發光強度最強。但若少於或超過此濃度，則發光強度呈現下降。而在501nm波長，可得到氧化鋅之光放射波峰。本實驗成功在低溫100℃，合成一近似白色光的奈米螢光粉。

　　Zinc sulfide (ZnS) and Zinc oxide (ZnO), as II-VI semiconductors with a wide band gap energy of 3.68 eV and 3.35 eV respectively, have received much attention due to their excellent luminescence properties and commercially used as phosphors applicated in electroluminescence devices. They are candidate materials for phosphors that emit visible light. The major and important applications of phosphors are used as light sources, display devices, radiation detectors and so on.
　　In this report, we use low temperature solid-state synthesis and chemical precipitation method to prepare ZnS, ZnO and ZnS doped Mn2+ nanoparticles. The nanoparticles were characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, differential thermal analysis (DTA), high-resolution analytical electron microscopy (HR-AEM), energy dispersive spectrometer (EDS), CIE chromaticity diagram, impedance analyzer (HP-4294A) and Raman spectrum. By means of various experiment parameters to find out the preferred synthesis conditions.
　　From the experiment results, the PLE spectrum exhibits a blue shift due to quantum confinement effect. The dimension of particles and the ratio of Zinc and Sulfur in the ZnS matrix affect the PL intensity. By adding 1 mol% Mn2+ ion, it shows the maximum emission intensity. A green emission peak at 501 nm was observed in PL spectrum of ZnO nanoparticles. In our experiment, we have successfully obtained the phosphor fabricated at low tempereture emits near-white color.

中文摘要……………………………………………………………Ⅰ
英文摘要……………………………………………………………Ⅱ
誌謝…………………………………………………………………Ⅲ
目錄…………………………………………………………………Ⅳ
表目錄………………………………………………………………Ⅶ
圖目錄………………………………………………………………Ⅸ

第一章 導論…………………………………………………………1
1-1 前言…………………………………………………………….1
1-2 研究動機……………………………………………………….2
1-3 相關研究與文獻回顧………………………………………….2

第二章 理論…………………………………………………………5
2-1 Ⅱ-Ⅵ化合物半導體材料之簡介………………………………5
2-1-1 硫化鋅之簡介………………………………………………6
2-1-2 氧化鋅之簡介………………………………………………7
2-2 螢光體之介紹………………………………………………….7
2-2-1 螢光體發光原理與過程……………………………………8
2-2-1-1 螢光體能量之激發與吸收…………………………….8
2-2-1-2 螢光放射和非輻射轉移……………………………….9
2-2-1-3 螢光材料之光學躍遷…………………………………10
2-2-2 螢光體性質……………………………………………….11
2-2-2-1 主體晶格對光譜之影響………………………………11
2-2-2-2 螢光效率………………………………………………12
2-2-2-3 發光亮度與濃度效應…………………………………12
2-2-3 發光中心之種類與原理………………………………….13
2-2-4 螢光材料的種類與應用………………………………….14
2-2-5 濃度消光理論…………………………………………….15
2-3 材料之奈米特性………………………………………………16
2-3-1 簡介……………………………………………………….16
2-3-2 奈米結構特性…………………………………………….18
2-3-3 能帶理論………………………………………………….22

第三章 實驗參數與研究方法…………………………………….25
3-1 實驗藥品………………………………………………………25
3-2 實驗步驟………………………………………………………25
3-2-1 低溫固態反應法………………………………………….25
3-2-2 化學沉澱法……………………………………………….26
3-2-3 硫化鋅摻雜錳嵌入二氧化矽…………………………….26
3-3 量測系統及特性分析…………………………………………26
3-3-1 量測儀器………………………………………………….26
3-3-2 特性分析………………………………………………….27
3-3-2-1 結構分析………………………………………………27
3-3-2-2 成分分析………………………………………………28
3-3-2-3 光學性質分析…………………………………………28
3-3-2-4 其他分析………………………………………………30

第四章 結果與討論……………………………………………….32
4-1 低溫固態反應法………………………………………………32
4-1-1 硫化鋅…………………………………………………….32
4-1-1-1 不同反應溫度…………………………………………32
4-1-1-2 不同硫與鋅成份比例…………………………………34
4-1-2 氧化鋅…………………………………………………….35
4-1-3 硫化鋅摻雜錳…………………………………………….37
4-2 化學沉澱法……………………………………………………38
4-2-1 硫化鋅…………………………………………………….38
4-2-2 硫化鋅摻雜錳…………………………………………….38
4-3 硫化鋅摻雜錳嵌入二氧化矽…………………………………39

第五章 結論與未來展望………………………………………….41
5-1 結論……………………………………………………………41
5-2 未來展望………………………………………………………42

附表格………………………………………………………………43
附圖形………………………………………………………………51
參考文獻……………………………………………………………99

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