臺灣博碩士論文加值系統

本論文的研究目標為CIGS薄膜太陽能電池吸收層，利用直流磁控濺鍍系統沉積750nm左右的CIG金屬前驅層於蘇打玻璃基板上，並利用真空蒸鍍系統沉積2μm左右的Se薄膜於CIG金屬前驅層上，利用硒化退火的方式使CIGS前驅層轉變成黃銅礦結構的CIGS吸收層。探討不同硒化退火參數(退火溫度，腔體壓力，升溫速率，持溫時間)對CIGS薄膜太陽能電池吸收層之晶體結構，表面形貌的影響。

In this work, copper indium gallium diselenide (CIGS) solar cells were deposited on soda-lime glass substrates by two-step method. Firstly, the Cu/Ga/In alloy precursors of approximately 750 nm thickness were deposited sequentially on glass substrates using Cu–Ga alloy and In targets by direct current magnetic sputtering system. Secondly, the metallic precursors were then selenized (about 2 μm thick) with solid Se pellets in a closed vacuum furnace. To study the effect of annealing on the chalcopyrite CIGS structure properties, the films have been annealed in vacuum. The influence of various annealing process parameters (annealing temperature, chamber pressure, heating rate and holding time) on the structural, morphological and properties of CIGS films were investigated.

摘要 i
ABSTRACT ii
誌謝 iii
目錄 iv
圖目錄 vii
表目錄 x
第一章 緒論 1
1.1 前言與研究背景 1
1.2 研究動機與目的 3
第二章 實驗理論與回顧 7
2.1 太陽能電池原理 7
2.2 CIGS薄膜太陽能電池結構 8
2.2.1 正電極層 8
2.2.2 窗口層 9
2.2.3 緩衝層 9
2.2.4 吸收層 9
2.2.5 背電極層 9
2.2.6 基板 10
2.3 CIGS薄膜特性 11
2.4 濺鍍原理 14
2.4.1 磁控濺鍍 15
2.5 薄膜成長原理 18
2.6 RTP硒化法(Rapid thermal process selenization) 22
2.6.1 單層元素疊層RTP硒化法 22
2.6.2 二元硒化物疊層RTP硒化法 22
第三章 實驗方法與步驟 23
3.1 實驗流程 23
3.1.1 CIGS吸收層製備流程 23
3.2 實驗設備 25
3.2.1 濺鍍系統 25
3.2.2 蒸鍍與RTP硒化系統 27
3.2.3 實驗材料 28
3.3 實驗規畫 29
3.3.1 CIG金屬前驅層實驗參數 29
3.3.2 蒸鍍硒薄膜實驗參數 31
3.3.3 RTP硒化製程參數 32
3.3.4 玻璃基板清洗流程 36
3.4 薄膜分析及量測 37
3.4.1 膜厚測量 37
3.4.2 薄膜晶相結構分析 39
3.4.3 場發射掃描式電子顯微鏡 41
3.4.4 能量發散X光螢光分析儀 43
第四章 結果與討論 45
4.1 CIGS金屬前驅層分析 45
4.1.1 CuGa金屬薄膜沉積速率分析 45
4.1.2 XRF金屬前驅層元素比例分析 46
4.1.3 Se薄膜沉積速率分析 47
4.2 硒化熱處理製程分析 49
4.2.1 各階段溫度硒化結果分析 49
4.2.2 各硒化腔體壓力結果分析 52
4.2.3 各硒化升溫速率結果分析 55
4.2.4 三階段硒化退火製程結果分析 58
第五章 結論 62
參考文獻 64

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