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研究生:鄭焜隆
研究生(外文):Zheng Kunlong
論文名稱:高效益電荷幫浦電路設計
論文名稱(外文):High Efficiency Charge Pump Circuits Design
指導教授:陳永進陳永進引用關係
指導教授(外文):Chen Yungchin
口試委員:陳永進汪芳興蔡志仁
口試委員(外文):Chen Yung-ChinWang Fang-HsingTsai Zhi-Ren
口試日期:2012-06-26
學位類別:碩士
校院名稱:亞洲大學
系所名稱:光電與通訊學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:62
中文關鍵詞:臨界電壓電荷幫浦靴帶式電路DC/DC Converter
外文關鍵詞:Charge pumpDC/DC ConverterBootstrapped
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本論文所設計之低電源電壓高效率電荷幫浦式(Charge pumps)穩壓系統(Regulators),利用電壓控制電路(Voltage-control circuits)及嶄新結構的方式實現高轉換比(Conversion ratio)的直流/直流電壓輸出。傳統電荷幫浦式電路,皆以金屬氧化物半導體場效電晶體(MOSFET)作為開關或傳輸元件, 其特性常因受到電晶體本身之臨界電壓(Threshold voltage)的影響,使得電荷幫浦式直流/直流穩壓系統不適合操作於低電源電壓之應用。因此,本論文提出採用電壓控制電路結構並加入靴帶式電路(Bootstrapp circuits)來克服臨界電壓(Threshold voltage)的影響,使傳統型迪克森電荷幫浦(Dickson charge pump)確實克服電晶體開關於電壓轉換上受到的臨界電壓之影響,並產生更高的輸出電壓(Vout),藉此可以採用較低電源電壓操作及輸出高電壓之目的。
本論文討論傳統電荷幫浦式的直流/直流穩壓電路並推導其等效
電路模型。為了提高此電路模型的準確性與實用性,在分析過程中考
量電阻性負載、頻率、寄生電容等特性之影響,提出靜態與動態之數
學式,讓使用者可以快速得到不同級數之等效輸出電壓方程式,用以
規劃轉換電晶體級數與電壓轉換比及輸出最大功率等參數。
論文中以 HSPICE level 3 模組參數互補式金氧半導體(CMOS)混合製程實現低電源電壓之高電壓轉換比電荷幫浦式直流/直流穩壓電路,利用一般電池的電壓(1.5 伏特)當作電源電壓,模擬電壓控制電路輸出電路的可行性,在操作頻率62.5 千赫茲與0.1 微法拉的轉換電容條件下,此電路可將較低的輸入電壓(1.5 伏特)轉換至將近四點八倍的直流輸出電壓(7.07 伏特),此外提出的新電路亦適用於各種升壓型電壓節能應用。
This paper proposed a bootstrapped type high-efficient charge pump circuit based on the Dickson charge pump in order to get a high output power and pump-efficiency. By using bootstrapped technique, it can increase both of pump-efficiency and power-efficiency. The proposed bootstrapped based charge pump can avoid the threshold voltage drop in conventional Dickson charge pump circuits and enable them to generate a higher output voltage. Simulation by using HSpice level 3 model shows that for conventional Dickson charge pump, it convert the input low DC-voltage (Vin=1.5V) up to 3.8 times of it (VOUT=5.77V), the pump efficiency was 76.93%. Our work, however, can convert the low input DC-voltage (Vin=1.5V) up near to 4.8 times of it (VOUT=7.07V), the pump
efficiency can reaches up to 94.2%. The newly proposed bootstrapped based Dickson charge pump circuit is suitable for various low to high voltage applications for power saving.
中文摘要......................................i
英文摘要(Abstract)..........................iii
目錄........................................iv
圖目錄.....................................vii
表目錄.......................................x
Chapter 1 緒論 ................................1
1.1 研究動機 ...................................1
1.2 DC/DC Converter Circuit應用領域 ............5
1.3 論文成果及貢獻 ..............................6
1.4 論文架構 ...................................7
Chapter 2 文獻回顧與討論.........................9
2.1 前言 ......................................9
2.2 電荷幫浦操作之簡介...........................10
2.2.1基本操作原理 ..............................11
2.2.2 非理想特性 ...............................12
2.3 Dickson Charge Pump介紹 ...................15
2.3.1 Dickson Charge Pump Circuit ............16
2.3.2 Dickson Charge Pump Equivalent Circuit..16
2.3.3 Dickson Charge Pump之限制因素.............17
2.4 CTS Charge Pump介紹........................19
2.4.1 CTS Charge Pump Circuit &限制因素.........19
2.4.2 Dynamic CTS Charge Pump Circuit &限制因素.21
2.5 Heap Charge Pump介紹.......................22
2.5.1 Heap Charge Pump Circuit &限制因素........22
2.6 總結 ......................................24
Chapter 3 High Pumping Gain Charge Pump Use Bootstrapp .25
3.1 前言 ......................................25
3.2 MOSFET元件傳輸簡介 ..........................25
3.2.1 NMOS 傳輸電晶體 ...........................25
3.2.2 PMOS 傳輸電晶體 ...........................26
3.3 MOSFET元件臨界電壓模型........................27
3.3.1 MOSFET元件對臨界電壓之影響 ..................27
3.4 Bootstrapped Switch介紹 ....................30
3.4.1 Bootstrapped Switch Circuit 應用 .........30
3.6 總結 .......................................32
Chapter 4 改善臨界電壓耗損之電荷幫浦模擬與驗證........34
4.1 前言 .......................................34
4.2 High Pumping Gain Charge Pump Circuit......34
4.3 電荷幫浦電路之模擬............................43
4.3.1 高電壓轉換比Typp 電荷幫浦之模擬與比較..........43
4.4 Power efficiency與Circuit Total Loss公式驗證.51
Chapter 5 結論與未來目標 .........................56
參考文獻.........................................58
誌謝............................................62

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